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Polycrystalline lead-free Ba$_{0.85}$Ca$_{0.15}$Zr$_{0.10}$Ti$_{0.90}$O$_3$ (BCZT), BaTi$_{0.89}$Sn$_{0.11}$O$_3$ (BTSn) and 0.4Ba$_{0.85}$Ca$_{0.15}$Zr$_{0.10}$Ti$_{0.90}$O$_3$-0.6BaTi$_{0.89}$Sn$_{0.11}$O$_3$ (0.4BCZT-0.6BTSn) ferroelectric ceramics were prepared via sol gel process and their structural, dielectric and energy storage properties were studied. Pure perovskite structure was confirmed by X ray diffraction analysis. The evolution of energy storage performances with temperature was studied. A Significant recoverable energy storage density of 137.86 mJ/cm$^3$ and high energy-storage efficiency of 86.19% under a moderate electric field of 30 kV/cm were achieved in the composite 0.4BCZT 0.6BTSn ceramic at 353 $^\circ$K. Moreover, excellent temperature stability (70-130 $^\circ$C) of the energy storage efficiency (less than 3%) was achieved.

Perovskite-type Ba0.9Sr0.1Ti0.9Sn0.1O3(BSTSn) ceramic was synthesized by the sol gel method. The P E hysteresis loops were recorded at different temperatures to investigate the ferroelectric and energy storage properties of BSTSn ceramic. Enhanced recoverable energy density and high energy storage efficiency were found to be 58.08 mJ/cm3 and 84.36 %, respectively at room temperature (RT) under a moderate applied electric field of 20 kV/cm. The electrocaloric effect (ECE) in the BSTSn ceramic was explored using two different approaches based on P E hysteresis loops, and pyroelectric current measurements. The largest electrocaloric (EC) temperature change of 0.63 K was determined using the Maxwell relationship obtained near RT under 20 kV/cm. The corresponding EC responsivity value of 0.31 K.mm/kV is one of the highest reported values in lead-free ferroelectrics near RT. This study demonstrates that the BSTSn ceramic is a promising candidate for solid-state cooling and energy storage applications.

Lead-free Ba0.9Sr0.1Ti0.9Sn0.1O3 (BSTSn) ceramic was prepared by the sol gel method. X-ray diffraction measurement at room temperature reveals the single-phase formation with tetragonal structure refined in the P4mm space group. Raman spectroscopy analysis at room temperature was used to confirm the structure of BSTSn ceramic sintered at 1420C during 5h. The dielectric measurements were examined in the temperature range [-90 250 C] and the frequency range of [100Hz 1MHz]. The maximum dielectric constant was found to be 5484 (1kHz) at room temperature. The diffuse phase transition characteristic at 1kHz was ascribed by the modified Curie Weiss law. Macroscopic polarization field (P E) hysteresis loops recorded at room temperature (RT) confirm the ferroelectric nature of BSTSn ceramic. Impedance spectroscopy analysis of BSTSn sample in the temperature range 300 380 C reveals the presence of two relaxation contributions originated from grains and grain boundaries. Activation energies of grain and grain boundaries resistances were deduced in order to determine the conduction mechanism of the studied sample.

A series of Pb-free ferroelectric materials Ba0.9Sr0.1Ti1-xSnxO3 (BSTS-x) with 0 < x < 0.15 was successfully prepared via solid-state reaction method. The effect of Sn substitution on the crystal structure, microstructure, dielectric behavior, ferroelectric and tunable features of BSTS-x ceramics were systematically investigated. Room temperature (RT) x-ray diffraction (XRD) analysis using the Rietveld refinement method reveals that all the synthesized BSTS-x ceramics were well crystallized into single perovskite structure. The results show a tetragonal phase for 0.00 < x < 0.02, which evolves to orthorhombic and tetragonal coexisting phases for 0.05 < x < 0.07. The composition x = 0.10 showed a mixture of tetragonal, orthorhombic and rhombohedral phases at RT, while a single cubic phase is observed for x = 0.15. The crystal phases determined by XRD were confirmed by Raman spectroscopy. Enhanced dielectric permittivity with a maximum value of {\epsilon}'~ 35000 is observed for x = 0.10 at RT. The ferroelectric behavior of BSTS-x ceramics was investigated through polarization hysteresis loops and tunability measurements. High tunability of 63% at RT and under the low DC-applied electric field of 1.40 kV/cm is achieved for x = 0.10.

We investigate the relaxation and conduction mechanism of Ba0.90Sr0.10TiO3 (BST) ceramic, synthesized by the solid state reaction method. The dielectric and relaxation properties are analyzed in the temperature range of 380-450{\deg}C with alternative current in the frequency range of 20Hz-1MHz. Variation of dielectric constant, \epsilon', with temperature shows a normal ferroelectric transition at Tc=95{\deg}C with a weak degree of diffuseness. The modified Cole-Cole equation is used to describe all contributions to the relaxation mechanism. The frequency exponent m({\omega},T) deduced from experimental data of the dielectric loss ({\epsilon}") as m({\omega}, T)=($\partial$ ln {\epsilon}"/$\partial$ ln {\omega}) shows a temperature and frequency dependence. Two conduction process are observed: non-overlapping small-polaron tunneling (NSPT) at low frequencies and overlapping large polaron tunneling (OLPT) at high frequencies. The analysis of Nyquist plots reveals also the presence of two contributions, who which the activation energies have been calculated.