Search

Although electroless contacts are the most used contacts on II-VI semiconductor materials (CdTe family) to solve many problems, they are difficult to understand and to control. For this paper, we have chosen two II-VI materials, CdTe and ZnTe, and three metals: Au, Pt, and Pd. For the characterization methods, we have chosen Rutherford backscattering (RBS), secondary ions mass spectroscopy (SIMS), and partially Auger for the contacts and interface structures, stoechiometry, and composition profiles. Electrical measurements, PICTS and TEES, are done to find out defect level concentrations and nature, as well as the possible correlation with the composition concentrations. As first parameter change, we have chosen the solution dilution in the electroless deposition process, while the other parameters were frozen. This allows us to drive and to see a drastic variation in the profile of the metal, the two constituent materials and the oxygen in the metal layer. The same has been seen at the interface where the [V.sub.Cd] concentration profile shows sensible variation too. We have found a clear connection with specific electrical defect concentrations. The validity of these concentration measurements in the bulk are then subject to questions. The comparison with evaporated contacts is done for bulk and surface property separations. Contact induced stress is simulated by static pressure in longitudinal and transversal direction. We have driven out the induced defect natures and concentrations. The limit of operation under stress is also given. Index Terms--CdTe, defect, electroless deposition thin films, nuclear detectors, PICTS, RBS, semiconductors, SIMS, stress, ZnTe.

Deals with a study which examined GaAs and GaAlAs layers doped with different group VI donors exposed to hydrogen plasma. Experimental procedures; Results and discussion; Conclusion.

Although electroless contacts are the most used contacts on II-VI semiconductor materials (CdTe family) to solve many problems, they are difficult to understand and to control. For this paper, we have chosen two II-VI materials, CdTe and ZnTe, and three metals: Au, Pt, and Pd. For the characterization methods, we have chosen Rutherford backscattering (RBS), secondary ions mass spectroscopy (SIMS), and partially Auger for the contacts and interface structures, stoechiometry, and composition profiles. Electrical measurements, PICTS and TEES, are done to find out defect level concentrations and nature, as well as the possible correlation with the composition concentrations. As first parameter change, we have chosen the solution dilution in the electroless deposition process, while the other parameters were frozen. This allows us to drive and to see a drastic variation in the profile of the metal, the two constituent materials and the oxygen in the metal layer. The same has been seen at the interface where the Vc,d concentration profile shows sensible variation too. We have found a clear connection with specific electrical defect concentrations. The validity of these concentration measurements in the bulk are then subject to questions. The comparison with evaporated contacts is done for bulk and surface property separations. Contact induced stress is simulated by static pressure in longitudinal and transversal direction. We have driven out the induced defect natures and concentrations. The limit of operation under stress is also given. [ABSTRACT FROM AUTHOR]