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We calculate all leading-twist gluon generalized parton distributions (GPDs) inside the proton at nonzero skewness using the basis light-front quantization framework. The proton's light-front wave functions are derived from a light-front quantized Hamiltonian incorporating Quantum Chromodynamics inputs. Our results show that the qualitative behaviors of the GPDs are consistent with those from other theoretical calculations. Additionally, we analyze the GPDs in the boost-invariant longitudinal coordinate, $\sigma=\frac{1}{2} b^- P^+$, which serves as the Fourier conjugate of the skewness. The GPDs in $\sigma$-space exhibit diffraction patterns, reminiscent of optical wave diffraction., Comment: 11 pages, 3 figures, and 1 table

Within the basis light-front quantization (BLFQ) framework, we evaluate the gluon chiral-odd generalized parton distributions (GPDs) inside the proton at zero skewness. We employ the light-front wave functions of the proton obtained from a light-front quantized Hamiltonian with quantum chromodynamics input using BLFQ. Our investigation encompasses both the valence Fock sector with three constituent quarks and an additional sector containing three quarks and a dynamical gluon. We analyze the gluon GPDs in the momentum space as well as in the transverse position space. We further present the gluon's generalized form factors derived from the Mellin moments of its chiral-odd GPDs. Using the proton transverse spin sum rule, we also present the $x$-dependence of the angular momentum carried by the polarized gluon and determine the relative contributions of quarks and the gluon to the transversity asymmetry., Comment: 11 pages, 12 figures

We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction, so that spin-orbit torques induce efficient domain wall motion. Using micromagnetic simulations, we find two pinning mechanisms that lead to different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics behind these pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic layer. Switching behavior and material choices will be discussed for the two implementations., Comment: 24 pages

Traditional methods of collecting user feedback through transit surveys are often time-consuming, resource intensive, and costly. In this paper, we propose a novel NLP-based framework that harnesses the vast, abundant, and inexpensive data available on social media platforms like Twitter to understand users' perceptions of various service issues. Twitter, being a microblogging platform, hosts a wealth of real-time user-generated content that often includes valuable feedback and opinions on various products, services, and experiences. The proposed framework streamlines the process of gathering and analyzing user feedback without the need for costly and time-consuming user feedback surveys using two techniques. First, it utilizes few-shot learning for tweet classification within predefined categories, allowing effective identification of the issues described in tweets. It then employs a lexicon-based sentiment analysis model to assess the intensity and polarity of the tweet sentiments, distinguishing between positive, negative, and neutral tweets. The effectiveness of the framework was validated on a subset of manually labeled Twitter data and was applied to the NYC subway system as a case study. The framework accurately classifies tweets into predefined categories related to safety, reliability, and maintenance of the subway system and effectively measured sentiment intensities within each category. The general findings were corroborated through a comparison with an agency-run customer survey conducted in the same year. The findings highlight the effectiveness of the proposed framework in gauging user feedback through inexpensive social media data to understand the pain points of the transit system and plan for targeted improvements., Comment: Word Count: 5515 words + 3 table (250 words per table) = 6265 words

Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work revealed the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque-induced switching is however still challenging due to the complicated interactions from different sublattices. Meanwhile, because of the diminishing magnetic susceptibility, the nature and the magnitude of current-induced magnetic dynamics remain poorly characterized in antiferromagnets, whereas spurious effects further complicate experimental interpretations. In this work, by growing a thin film antiferromagnetic insulator, {\alpha}-Fe2O3, along its non-basal plane orientation, we realize a configuration where an injected spin current can robustly rotate the N\'eel vector within the tilted easy plane, with an efficiency comparable to that of classical ferromagnets. The spin-orbit torque effect stands out among other competing mechanisms and leads to clear switching dynamics. Thanks to this new mechanism, in contrast to the usually employed orthogonal switching geometry, we achieve bipolar antiferromagnetic switching by applying positive and negative currents along the same channel, a geometry that is more practical for device applications. By enabling efficient spin-orbit torque control on the antiferromagnetic ordering, the tilted easy plane geometry introduces a new platform for quantitatively understanding switching and oscillation dynamics in antiferromagnets., Comment: 21 pages, 5 figures

Ferromagnetic metals and insulators are widely used for generation, control and detection of magnon spin signals. Most magnonic structures are based primarily on either magnetic insulators or ferromagnetic metals, while heterostructures integrating both of them are less explored. Here, by introducing a Pt/yttrium iron garnet (YIG)/permalloy (Py) hybrid structure grown on Si substrate, we studied the magnetic coupling and magnon transmission across the interface of the two magnetic layers. We found that within this structure, Py and YIG exhibit an antiferromagnetic coupling field as strong as 150 mT, as evidenced by both the vibrating-sample magnetometry and polarized neutron reflectometry measurements. By controlling individual layer thicknesses and external fields, we realize parallel and antiparallel magnetization configurations, which are further utilized to control the magnon current transmission. We show that a magnon spin valve with an ON/OFF ratio of ~130% can be realized out of this multilayer structure at room temperature through both spin pumping and spin Seebeck effect experiments. Thanks to the efficient control of magnon current and the compatibility with Si technology, the Pt/YIG/Py hybrid structure could potentially find applications in magnon-based logic and memory devices., Comment: 29 pages, 3 figures main text, 7 figures supplemental materials

Quantitative investigation on the current-induced torque in antiferromagnets represents a great challenge, due to the lack of an independent method for controlling N\'eel vectors. Here by utilizing an antiferromagnetic insulator with Dzyaloshinskii-Moriya interaction, {\alpha}-Fe2O3, we show that the N\'eel vector can be controlled with a moderate external field, which is further utilized to calibrate the current-induced magnetic dynamics. We find that the current-induced magnetoresistance change in antiferromagnets can be complicated by resistive switching that does not have a magnetic origin. By excluding non-magnetic switching and comparing the current-induced dynamics with the field-induced one, we determine the nature and magnitude of current-induced effects in Pt/{\alpha}-Fe2O3 bilayer films.

We report broadband microwave absorption spectroscopy of the layered antiferromagnet CrCl3. We observe a rich structure of resonances arising from quasi-two-dimensional antiferromagnetic dynamics. Due to the weak interlayer magnetic coupling in this material, we are able to observe both optical and acoustic branches of antiferromagnetic resonance in the GHz frequency range and a symmetry-protected crossing between them. By breaking rotational symmetry, we further show that strong magnon-magnon coupling with large tunable gaps can be induced between the two resonant modes.