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Quantum dot (QD) photovoltaic devices are attractive for their low-cost synthesis, tunable band gap and potentially high power conversion efficiency (PCE). However, the experimentally achieved efficiency to date remains far from ideal. Here, we report an in-situ fabrication and investigation of single TiO2-nanowire/CdSe-QD heterojunction solar cell (QDHSC) using a custom-designed photoelectric transmission electron microscope (TEM) holder. A mobile counter electrode is used to precisely tune the interface area for in situ photoelectrical measurements, which reveals a strong interface area dependent PCE. Theoretical simulations show that the simplified single nanowire solar cell structure can minimize the interface area and associated charge scattering to enable an efficient charge collection. Additionally, the optical antenna effect of nanowire-based QDHSCs can further enhance the absorption and boost the PCE. This study establishes a robust 'nanolab' platform in a TEM for in situ photoelectrical studies and provides valuable insight into the interfacial effects in nanoscale solar cells.

Recent discoveries in the field of graphene-based heterostructures have led to the demonstration of high-performance photodetectors. However, the studies to date have been largely limited to the heterojunction with a Schottky barrier, restricted by an inevitable compromise between photoresponsivity and photodetectivity. Here, a new class of graphene-based tunneling photodetectors is introduced by inserting the Al2O3 tunneling layer between silicon and graphene. The photocarriers can tunnel through the designed insulator layer which simultaneously blocks the dark current, thus maintaining high photodetectivity with desirable photoresponsivity. We further modulate the thickness of the Al2O3 layer to explore the tunneling mechanism for the photocarriers, in which a photoresponsivity of 0.75 A/W, a high current ratio of 4.8 × 103 and a photodetectivity of 3.1 × 1012 Jones are obtained at a 13.3-nm-thick Al2O3 layer. In addition, the fabrication process is compatible with conventional semiconductor processing, providing further flexibility to large-scale integrated photodetectors with high performance.

Due to its atomically ultrathin morphology and superior optoelectronic properties, graphene has been broadly studied and utilized in phototransistors, photoconductors, or heterojunction nanostructures. However, in practical devices, the disadvantages of graphene should be concerned for its high dark current, very low on/off ratio, and high-priced fabrication cost. We report the photodetecting of the graphene/insulator/silicon heterojunction. The insulator layer is optimized to achieve balanced optoelectronic properties in terms of an Iph/Idark ratio of 4.17 × 103, a responsivity of 35 mA W−1, and a detectivity of 6.39 × 1010 Jones at a wavelength of 658 nm, with low operating voltage and static power dissipation (0.84 nW). Besides, response speed and degradation in the environment are tested. The mechanisms are revealed and analyzed by I-V measurements. [ABSTRACT FROM AUTHOR]