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The two-dimensional (2D) materials are highly susceptible to the influence of their neighbors, thereby enabling the design by proximity phenomena. We reveal a remarkable terahertz (THz) spin-light interaction in 2D Dirac materials that arises from magnetic and spin-orbital proximity effects. The dynamical realization of the spin-charge conversion, the electric dipole spin resonance (EDSR), of Dirac electrons displays distinctive THz features, upon emerging spin-pseudospin proximity terms in the Hamiltonian. To capture the effect of fast pseudospin dynamics on the electron spin, we develop a mean-field theory and complement it with a quantum-mechanical treatment. As a specific example, we investigate the THz response of a single graphene layer proximitized by a magnetic substrate. Our analysis demonstrates a strong enhancement and anomalous polarization structure of the THz-light absorption which can enable THz detection and efficient generation and control of spins in spin-based quantum devices. The identified coupled spin-pseudospin dynamics is not limited to EDSR and may influence a broad range of optical, transport, and ultrafast phenomena., Comment: 8 pages, 4 figures, 1 supplemental material

Antiferromagnets (AFM) with a nonrelativistic spin splitting (NSS) of electronic bands expand the range of spin-dependent phenomena and their applications. A crucial understanding for both of them pertains to the inherent spin dynamics. We demonstrate that the $d$-wave NSS gives rise to extremely anisotropic spin dynamics of carriers driven by the relaxation induced by motional narrowing. In contrast to the no relaxation of the spin polarization along the Neel vector, the dynamics of perpendicular spin components greatly varies from a long relaxation for a weak NSS to the fast-decaying oscillations for a strong NSS, a regime relevant to AFM with the $d$-wave NSS. The extreme anisotropy of the spin relaxation is transformed by the external magnetic field, which triggers the relaxation of the parallel spin component and also suppresses all the relaxation rates at larger magnitudes. The predicted spin dynamics of the $d$-wave NSS, known also from altermagnets, can be used as their experimental fingerprints and guide future applications., Comment: 7 pages, 4 figures

Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and antiferromagnets, offers unprecedented opportunities for magnetoelectric coupling. However, electrically tuning altermagnets remains an outstanding challenge. Here, we demonstrate how this challenge can be overcome by using antiferroelectricity and ferroelectricity to modulate the spin splitting in altermagnets, employing a universal, symmetry-based design principle supported by an effective model. We introduce an unexplored class of multiferroics: antiferroelectric altermagnets (AFEAM), where antiferroelectricity and altermagnetism coexist in a single material. From first-principles calculations, we validate the feasibility of AFEAM in well-established van der Waals metal thio(seleno)phosphates and perovskite oxides. We reveal the design of AFEAM ranging from two-dimensional monolayers to three-dimensional bulk structures. Remarkably, even a weak electric field can effectively toggle spin polarization in the AFEAM by switching between antiferroelectric and ferroelectric states. Our findings not only enrich the understanding of magnetoelectric coupling but also pave the way for electrically controlled spintronic and multiferroic devices., Comment: Accepted in Phys. Rev. Lett

While spin-triplet pairing remains elusive in nature, there is a growing effort to realize proximity-induced equal-spin triplet superconductivity in junctions with magnetic regions or an applied magnetic field and common $s$-wave superconductors. To enhance such spin-triplet contribution, it is expected that junctions with a weak interfacial barrier and strong spin-orbit coupling are desirable. Intuitively, a weak interfacial barrier enables a robust proximity-induced superconductivity and strong spin-orbit coupling promotes spin mixing, converting spin-singlet into spin-triplet superconductivity. In contrast, we reveal a nonmonotonic spin-triplet contribution with the strength of the interfacial barrier and spin-orbit coupling. This picture is established by considering different signatures in conductance and superconducting correlations, as well as by performing self-consistent calculations. As a result, we identify a strongly enhanced spin-triplet superconductivity, realized for an intermediate strength of interfacial barrier and spin-orbit coupling. In junctions with magnetic regions, an enhanced spin-triplet superconductivity leads to a large magnetoanisotropy of conductance and superconducting correlations. This picture of an enhanced spin-triplet superconductivity is consistent with experiments demonstrating a huge increase in the conductance magnetoanisotropy, which we predict can be further enhanced at a finite bias.

By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 \mu$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms.

Planar Josephson junctions provide a platform to host topological superconductivity which, through manipulating Majorana bound states (MBS), could enable fault-tolerant quantum computing. However, what constitutes experimental signatures of topological superconductivity and how MBS can be detected remains strongly debated. In addition to spurious effects that mimic MBS, there is a challenge to discern the inherent topological signals in realistic systems with many topologically-trivial Andreev bound states, determining the transport properties of Josephson junctions. Guided by the advances in microwave spectroscopy, we theoretically study Al/InAs-based planar Josephson junction embedded into a radio-frequency superconducting quantum interference device to identify microwave signatures of topological superconductivity. Remarkably, by exploring the closing and reopening of a topological gap, we show that even in a wide planar Josephson junction with many Andreev bound states, such a topological signature is distinguishable in the resonance frequency shift of a microwave drive and the ``half-slope'' feature of the microwave absorption spectrum. Our findings provide an important step towards experimental detection of non-Abelian statistics and implementing scalable topological quantum computing.

Planar Josephson junctions (JJs), based on common superconductors and III-V semiconductors, are sought for Majorana states and fault-tolerant quantum computing. However, with gate-tunable spin-orbit coupling (SOC), we show that the range of potential applications of such JJs becomes much broader. The time-dependent SOC offers unexplored mechanisms for switching JJs, accompanied by the $2\pi$-phase jumps and the voltage pulses corresponding to the single-flux-quantum transitions, key to high-speed and low-power superconducting electronics. In a constant applied magnetic field, with Rashba and Dresselhaus SOC, anharmonic current-phase relations, calculated microscopically in these JJs, yield a nonreciprocal transport and superconducting diode effect. Together with the time-dependent SOC, this allows us to identify a switching mechanism at no applied current bias which supports fractional-flux-quantum superconducting circuits and neuromorphic computing., Comment: 7 pages, 4 figures, Invited to APL Special Topic Issue: "Josephson Junctions and Related Proximity Effects: From Basic Science to Emerging Applications in Advanced Technologies", accepted version

A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson junctions, which can be fabricated to have a nearly perfect interfacial transparency, predicts a simple universal behavior. In that model, at the same value of Zeeman field for the topological transition, there is a $\pi$ phase jump and a minimum in the critical superconducting current, while applying a controllable phase difference yields a diamond-shaped topological region as a function of that phase difference and a Zeeman field. In contrast, even for a perfect interfacial transparency, we find a much richer and nonuniversal behavior as the width of the superconductor is varied or the Dresselhaus spin-orbit coupling is considered. The Zeeman field for the phase jump, not necessarily $\pi$, is different from the value for the minimum critical current, while there is a strong deviation from the diamond-like topological region. These Josephson junctions show a striking example of a nonreciprocal transport and superconducting diode effect, revealing the importance of our findings not only for topological superconductivity and fault-tolerant quantum computing, but also for superconducting spintronics., Comment: Invited to APL Special Topic Issue: "Josephson Junctions and Related Proximity Effects: From Basic Science to Emerging Applications in Advanced Technologies", accepted version

Optical properties in van der Waals heterostructures based on monolayer transition-metal dichalcogenides (TMDs), are often dominated by excitonic transitions. While intrinsic spin-orbit coupling (SOC) and an isotropic band structure are typically studied in TMDs, in their heterostructures Rashba SOC and trigonal warping (TW), resulting in bands with threefold anisotropy, are also present. By considering a low-energy effective Hamiltonian and Bethe-Salpeter equation, we study the effect of Rashba SOC and TW on the band structure and absorption spectra. Rashba SOC is predicted to lead to emergent excitons, which are identified as an admixture between 1s and 2p symmetries. In contrast, for experimentally relevant values, TW has only a negligible effect on the absorption spectrum. These findings could guide experimental demonstrations of emergent bright excitons and further studies of the proximity effects in van der Waals heterostructure., Comment: Accepted by Phys. Rev. B. Contains 11 pages, 9 figures

Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials., Comment: 30 pages, 12 figures

Lasers with injected spin-polarized carriers show an outstanding performance in both static and dynamic operation. In addition to the intensity response of conventional lasers, without spin-polarized carriers, both intensity and polarization of light can be exploited for optical communication in spin-lasers. However, the polarization dynamics of spin-lasers under amplitude modulation has been largely overlooked. Here we reveal, analytically and numerically, a nontrivial polarization response that accompanies the well-known intensity dynamics of a spin-laser under amplitude modulation. We evaluate the polarization and intensity response under the same amplitude modulation, and further assess the capability of such a polarization response in digital data transfer with eye diagram simulations. Our results provide a more complete understanding of the modulation response in spin-lasers and open up unexplored opportunities in optical communication and spintronics., Comment: 7 pages, 4 figures, Applied Physics Letters in press

Nonreciprocal phenomena in the normal state are well established and key to many commercial applications. In contrast, superconducting analogs, such as the superconducting diode effect (SDE), are only starting to be experimentally explored and pose significant challenges to their theoretical understanding. In this work we put forth a phenomenological picture of the SDE based on the generalized Ginzburg-Landau free energy, which includes a Lifshitz invariant as the hallmark of noncentrosymmetric helical phase of the finite-momentum Cooper pairs. We reveal that such a Lifshitz invariant drives the SDE in quasi-two-dimensional systems in an applied magnetic field and cannot be removed by a gauge transformation, due to the inherently inhomogeneous magnetic response. For a thin film, the SDE scales with the square of its thickness and nonlinearly with the strength of the in-plane magnetic field. We derive an explicit formula that relates the SDE at small magnetic fields to the strength of Rashba spin-orbit coupling, g-factor, and Fermi energy. For a noncentrosymmetric Josephson junction, we self-consistently obtain generalized anharmonic current-phase relation which support the SDE. The transparency of our approach, which agrees well with experimentally-measured SDE, offers an important method to study nonreciprocal phenomena, central to superconducting spintronics and topological superconductivity., Comment: 4+3 pages, 2 figures

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of two-dimensional ferromagnets in semiconductor-based vdW junctions offers gate-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not just the magnitude, but also the TMR sign is tuned by the applied bias or the semiconductor thickness, enabling modulation of highly spin-polarized carriers in vdW semiconductors.

We explain how Rashba spin-orbit coupling (SOC) in a two-dimensional electron gas (2DEG), or in a conventional $s$-wave superconductor, can lead to a large magnetoresistance even with one ferromagnet. However, such enhanced magnetoresistance is not generic and can be nonmonotonic and change its sign with Rashba SOC. For an in-plane rotation of magnetization, it is typically negligibly small for a 2DEG and depends on the perfect transmission which emerges from a spin-parity-time symmetry of the scattering states, while this symmetry is generally absent from the Hamiltonian of the system. The key difference from considering the normal-state magnetoresistance is the presence of the spin-dependent Andreev reflection at superconducting interfaces. In the fabricated junctions of quasi-2D van der Waals ferromagnets with conventional $s$-wave superconductors (Fe$_{0.29}$TaS$_2$/NbN) we find another example of enhanced magnetoresistance where the presence of Rashba SOC reduces the effective interfacial strength and is responsible for an equal-spin Andreev reflection. The observed nonmonotonic trend in the out-of-plane magnetoresistance with the interfacial barrier is an evidence for the proximity-induced equal-spin-triplet superconductivity., Comment: This work is submitted to the special issue of Phys. Rev. B dedicated to Professor Emmanuel Rashba

The interplay between superconductivity and ferromagnetism in the superconductor/ferromagnet (SC/FM) heterostructures generates many interesting physical phenomena, including spin-triplet superconductivity, superconducting order parameter oscillation, and topological superconductivity. The unique physical properties make the SC/FM heterostructures as promising platforms for future superconducting spintronics and quantum computation applications. In this article, we review important research progress of SC/FM heterostructures from superconducting spintronics to quantum computation, and it is organized as follows. Firstly, we discuss the progress of spin current carriers in SC/FM heterostructures including Bogoliubov quasiparticles, superconducting vortex, and spin-triplet Cooper pairs which might be used for long-range spin transport. Then, we will describe the {\pi} Josephson junctions and its application for constructing {\pi} qubits. Finally, we will briefly review experimental signatures of Majorana states in the SC/FM heterostructures and the theoretically proposed manipulation, which could be useful to realize fault-tolerant topological quantum computing.

Spin-orbit coupling (SOC) relates to the interaction between an electron's motion and its spin, and is ubiquitous in solid-state systems. Although the effect of SOC in normal-state phenomena has been extensively studied, its role in superconducting hybrid structures and devices opens many unexplored questions. In conjunction with broken symmetries and material inhomogeneities within superconducting hybrid structures, SOC may have additional contributions, beyond its effects in homogenous materials. Remarkably, even with well-established magnetic or nonmagnetic materials and conventional s-wave spin-singlet superconductors, SOC leads to emergent phenomena including equal-spin triplet pairing and topological superconductivity (hosting Majorana states), a modified current-phase relationship in Josephson junctions, and nonreciprocal transport. SOC is also responsible for transforming quasiparticles in superconducting structures which enhances the spin Hall effect and changes spin dynamics. Taken together, SOC in superconducting hybrid structures and the potential for electric tuning of the SOC strength, creates fascinating possibilities to advance superconducting spintronic devices for energy-efficient computing, and enable topological fault-tolerant quantum computing. By providing a description of experimental techniques and theoretical methods to study SOC, this Colloquium describes the current understanding of resulting phenomena in superconducting structures and offers a framework to select and design a growing class of materials systems where SOC plays an important role., Comment: 36 pages, 9 figures

Integrating conventional superconductors with common III-V semiconductors provides a versatile platform to implement tunable Josephson junctions (JJs) and their applications. We propose that with gate-controlled time-dependent spin-orbit coupling, it is possible to strongly modify the current-phase relations and Josephson energy and provide a mechanism to drive the JJ dynamics, even in the absence of any bias current. We show that the transition between stable phases is realized with a simple linear change in the strength of the spin-orbit coupling, while the transition rate can exceed the gate-induced electric field GHz changes by an order of magnitude. The resulting interplay between the constant effective magnetic field and changing spin-orbit coupling has direct implications for superconducting spintronics, controlling Majorana bound states, and emerging qubits. We argue that topological superconductivity, sought for fault-tolerant quantum computing, offers simpler applications in superconducting electronics and spintronics., Comment: 7 pages, 5 figures, published in Phys. Rev. Applied as a Letter

Fundamental symmetry breaking and relativistic spin-orbit coupling give rise to fascinating phenomena in quantum materials. Of particular interest are the interfaces between ferromagnets and common s-wave superconductors, where the emergent spin-orbit fields support elusive spin-triplet superconductivity, crucial for superconducting spintronics and topologically-protected Majorana bound states. Here, we report the observation of large magnetoresistances at the interface between a quasi-two-dimensional van der Waals ferromagnet Fe0.29TaS2 and a conventional s-wave superconductor NbN, which provides the possible experimental evidence for the spin triplet Andreev reflection and induced spin-triplet superconductivity at ferromagnet/superconductor interface arising from Rashba spin-orbit coupling. The temperature, voltage, and interfacial barrier dependences of the magnetoresistance further support the induced spin-triplet superconductivity and spin-triplet Andreev reflection. This discovery, together with the impressive advances in two-dimensional van der Waals ferromagnets, opens an important opportunity to design and probe superconducting interfaces with exotic properties.

Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of temperature-dependent and spatially-resolved PL measurements reveal this peak is unique to the TiSe$_2$-MoSe$_2$ interface, higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe$_2$ charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations, but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves.

A hallmark of spin-lasers, injected with spin-polarized carriers, is their threshold behavior with the onset of stimulated emission. Unlike the single threshold in conventional lasers with unpolarized carriers, two thresholds are expected in spin lasers. With the progress in scaled-down lasers and the use of novel two-dimensional materials it is unclear if the common description of spin lasers assuming a negligible spontaneous emission and linear optical gain remains relevant or even how to identify the lasing thresholds. Our rate-equation description addresses these questions by considering a large spontaneous emission and a nonlinear optical gain. We provide a transparent approach and analytical results to explore the resulting threshold behavior, its deviation from the prior studies, as well as guide future spin-lasers as a versatile platform for spintronics beyond magnetoresistance., Comment: 7 pages, 4 figures

A nodal-line semimetal phase which is enforced by the symmetries of the material is interesting from fundamental and application standpoints. We demonstrate that such a phase of matter can be engineered by a simple method: Introducing vacancies in certain configurations in common symmorphic materials leads to nonsymmorphic polymorphs with symmetry-enforced nodal lines which are immune to symmetry-preserving perturbations, such as spin-orbit coupling. Furthermore, the spectrum acquires also accidental nodal lines with enhanced robustness to perturbations. These phenomena are explained on the basis of a symmetry analysis of a minimal effective two-dimensional model which captures the relevant symmetries of the proposed structures, and verified by first-principles calculations of vacancy-engineered borophene polymorphs, both with vanishing and with strong Rashba spin-orbit coupling. Our findings offer an alternative path to using complicated nonsymmorphic compounds to design robust nodal-line semimetals; one can instead remove atoms from a simple symmorphic monoatomic material.

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against either nonmagnetic or long-range magnetic disorder, verified by the Green function calculations. Based on first-principles results, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting non-volatile applications of spin-valley filters, valves, and waveguides even at room temperature., Comment: 7 pages, 4 figures

A hallmark of topological superconductivity is the non-Abelian statistics of Majorana bound states (MBS), its chargeless zero-energy emergent quasiparticles. The resulting fractionalization of a single electron, stored nonlocally as a two spatially-separated MBS, provides a powerful platform for implementing fault-tolerant topological quantum computing. However, despite intensive efforts, experimental support for MBS remains indirect and does not probe their non-Abelian statistics. Here we propose how to overcome this obstacle in mini-gate controlled planar Josephson junctions (JJs) and demonstrate non-Abelian statistics through MBS fusion, detected by charge sensing using a quantum point contact, based on dynamical simulations. The feasibility of preparing, manipulating, and fusing MBS in two-dimensional (2D) systems is supported in our experiments which demonstrate the gate control of topological transition and superconducting properties with five mini gates in InAs/Al-based JJs. While we focus on this well-established platform, where the topological superconductivity was already experimentally detected, our proposal to identify elusive non-Abelian statistics motivates also further MBS studies in other gate-controlled 2D systems., Comment: 10 pages, 7 figures; Accepted in Nature Communications

Spin-orbit coupling in two-dimensional systems is usually characterized by Rashba and Dresselhaus spin-orbit coupling (SOC) linear in the wave vector. However, there is a growing class of materials which instead support dominant SOC cubic in the wave vector (cSOC), while their superconducting properties remain unexplored. By focusing on Josephson junctions in Zeeman field with superconductors separated by a normal cSOC region, we reveal a strongly anharmonic current-phase relation and complex spin structure. An experimental cSOC tunability enables both tunable anomalous phase shift and supercurrent, which flows even at the zero-phase difference in the junction. A fingerprint of cSOC in Josephson junctions is the f-wave spin-triplet superconducting correlations, important for superconducting spintronics and supporting Majorana bound states., Comment: 17 pages, 11 figures, supplemental material

Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the operation of lasers. With the injection of spin-polarized carriers, which lead to the circularly polarized light, the polarization of the emitted light can be changed an order of magnitude faster than its intensity. This ultrafast operation of spin lasers relies on a large birefringence, usually viewed as detrimental in spin and conventional lasers. We introduce a transparent description of spin lasers using intensity equations, which elucidate the influence of birefringence on the intensity and polarization modulation of lasers. While intensity modulation is independent of birefringence, for polarization modulation an increase in birefringence directly increases the resonant frequency. Our results for dynamical operation of lasers provide a guide for their spin-dependent response and spintronic applications beyond magnetoresistance., Comment: 11 pages, 9 figures

Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics., Comment: 22 pages and 21 figures, invited review for a special issue on spintronics in Solid State Commun

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe$_2$ - MoSe$_2$ vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe$_2$-capped regions of MoSe$_2$. L1 is observed at energies below the commonly-studied MoSe$_2$ excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe$_2$ and NbSe$_2$ - MoSe$_2$ heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures., Comment: 30 pages, 5 figures, 2 tables

We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related tunneling anisotropic magnetoresistance (TAMR) has been extensively studied before, we predict an effect with a different origin arising from the evolution of a resonant condition with the in-plane rotation of magnetization and having a much larger magnitude. The resonances in the tunneling emerge from a spin-parity-time symmetry of the scattering states. However, such a symmetry is generally absent from the system itself and only appears for certain parameter values. Without resonant behavior in the topological surface states of a proximitized three-dimensional topological insulator (TI), TAMR measurements can readily distinguish them from often misinterpreted trivial Rashba-like states inherent to many TIs.

The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators., Comment: 20 pages, 9 figures

Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene. We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the \Co/\Pt/\Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties., Comment: 10 pages

In many atomically thin materials their optical absorption is dominated by excitonic transitions. It was recently found that optical selection rules in these materials are influenced by the band topology near the valleys. We propose that gate-controlled band ordering in a single atomic monolayer, through changes in the valley winding number and excitonic transitions, can be probed in helicity-resolved absorption and photoluminescence. This predicted tunable band topology is confirmed by combining an effective Hamiltonian and a Bethe-Salpeter equation for an accurate description of excitons, with first-principles calculations suggesting its realization in Sb-based monolayers., Comment: 7 pages, 4 figures, accepted in PRL

We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.

Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS have focused on one-dimensional systems, the onset of topological superconductivity requires delicate parameter tuning and geometric constraints pose significant challenges for their control and demonstration of non-Abelian statistics. To overcome these challenges, building on recent experimental advances in planar Josephson junctions (JJs), we propose a MBS platform of X-shaped JJs. This versatile implementation reveals how external flux control of the superconducting phase difference can generate and manipulate multiple MBS pairs to probe non-Abelian statistics. The underlying topological superconductivity exists over a large parameter space, consistent with materials used in our fabrication of such X junctions, as an important step towards scalable topological quantum computing., Comment: 6 pages, 4 figures, accepted in PRL

Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $\pi$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.

A common path to superconducting spintronics, Majorana fermions, and topologically-protected quantum computing relies on spin-triplet superconductivity. While naturally occurring spin-triplet pairing is elusive and even common spin-triplet candidates, such as Sr$_2$RuO$_4$, support alternative explanations, proximity effects in heterostructures can overcome these limitations. It is expected that robust spin-triplet superconductivity in magnetic junctions should rely on highly spin-polarized magnets or complex magnetic multilayers. Instead, we predict that the interplay of interfacial spin-orbit coupling and the barrier strength in simple magnetic junctions, with only a small spin polarization and s-wave superconductors, can lead to nearly complete spin-triplet superconducting proximity effects. This peculiar behavior arises from an effective perfect transparency: interfacial spin-orbit coupling counteracts the native potential barrier for states of a given spin and wave vector. We show that the enhanced spin-triplet regime is characterized by a huge increase in conductance magnetoanisotropy, orders of magnitude larger than in the normal state.

A hybrid semiconductor-superconductor nanowire on the top of a magnetic film in the stripe phase experiences a magnetic texture from the underlying fringing fields. The Zeeman interaction with the highly inhomogeneous magnetic textures generates a large synthetic spin-orbit coupling. We show that this platform can support the formation of Majorana bound states (MBS) localized at the ends of the nanowire. The transition to the topological superconducting phase not only depends on the nanowire parameters and stripe size but also on the relative orientation of the stripes with respect to the nanowire axis. Topological phase transitions with the corresponding emergence or destruction of MBS can be induced by reorienting the stripes or shifting their position, which can be achieved by passing a charge current through the magnetic film or by applying electrically-controlled strain to it. The proposed platform removes the need for external magnetic fields and offers a non-invasive electrical tuning of MBS with the perturbation (current or strain) acting only on thee magnetic film., Comment: 9 pages, 6 figures

Collective charge excitations in solids have been the subject of intense research ever since the pioneering works of Bohm and Pines in the 1950s. Most of these studies focused on long-wavelength plasmons that involve charge excitations with a small crystal-momentum transfer, $q \ll G$, where $G$ is the wavenumber of a reciprocal lattice vector. Less emphasis was given to collective charge excitations that lead to shortwave plasmons in multivalley electronic systems (i.e., when $q \sim G$). We present a theory of intervalley plasmons, taking into account local-field effects in the dynamical dielectric function. Focusing on monolayer transition-metal dichalcogenides where each of the valleys is further spin-split, we derive the energy dispersion of these plasmons and their interaction with external charges. Emphasis in this work is given to sum rules from which we derive the interaction between intervalley plasmons and a test charge, as well as a compact single-plasmon pole expression for the dynamical Coulomb potential., Comment: Any feedback is welcome

Spin-valve structures in which a change of magnetic configuration is responsible for magnetoresistance have enabled impressive advances in spintronics, focusing on magnetically storing and sensing information. However, this mature technology also offers versatile control of the underlying fringing fields and entirely different applications by realizing topologically-nontrivial states. Together with proximity-induced superconductivity in a two-dimensional electron gas, these fringing fields realized in commercially-available spin valves could control Majorana bound states (MBS). Detailed support for the existence and control of MBS is obtained by combining accurate micromagnetic simulation of fringing fields used as an input in Bogoliubov de Gennes equation to calculate low-energy spectrum, wavefunction localization, and local charge neutrality. A generalized condition for quantum phase transition in these structures provides valuable guidance for the MBS evolution and implementing reconfigurable effective topological wires., Comment: 8 pages, 7 figures

Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader implications of SOC that is also central to the design of topological states, including topological insulators, skyrmions, and Majorana fermions, or to overcome the exclusion of two-dimensional ferro-magnetism expected from the Mermin-Wagner theorem. SOC and the resulting emergent interfacial spin-orbit fields are simply realized in junctions through structural inversion asymmetry, while the anisotropy in magnetoresistance (MR) allows for their experimental detection. Surprisingly, we demonstrate that an all-epitaxial ferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes a remarkable transformation below the superconducting transition temperature of the metal. The superconducting junction has a three orders of magnitude higher MR anisotropy and supports the formation of spin-triplet superconductivity, crucial for superconducting spintronics, and topologically-protected quantum computing. Our findings call for revisiting the role of SOC in other systems which, even when it seems negligible in the normal state, could have a profound influence on the superconducting response., Comment: Accepted for publication in Physical Review Applied

Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one single system, likely to enable important unexplored phenomena and applications, has been largely overlooked so far. Here, by combining a tight-binding model with first-principles calculations, we find the large-band-gap quantum spin Hall effects (QSHEs) and valley Hall effects (VHEs) appear simultaneously in the Bi monolayers decorated with halogen elements, denoted as Bi2XY (X, Y = H, F, Cl, Br, or I). A staggered exchange field is introduced into the Bi2XY monolayers by transition metal atom (Cr, Mo, or W) doping or LaFeO3 magnetic substrates, which together with the strong SOC of Bi atoms generates a time-reversal-symmetry-broken QSHE and a huge valley splitting (up to 513 meV) in the system. With gate control, QSHE and anomalous charge, spin, valley Hall effects can be observed in the single system. These predicted multiple and exotic Hall effects, associated with various degrees of freedom of electrons, could enable applications of the functionalized Bi monolayers in electronics, spintronics, and valleytronics., Comment: accepted in npj Quantum Materials

The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena. Introducing novel concepts in lasers thus has a potential for both applied and fundamental implications. Here we experimentally demonstrate that the coupling between carrier spin and light polarization in common semiconductor lasers can enable room-temperature modulation frequencies above 200 GHz, exceeding by nearly an order of magnitude the best conventional semiconductor lasers. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both commonly viewed as detrimental in spintronics and conventional lasers. Our results overcome the key speed limitations of conventional directly modulated lasers and offer a prospect for the next generation of low-energy ultrafast optical communication., Comment: 10 pages, 4 figures

The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative DC bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations., Comment: 10 pages, 6 figures

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena., Comment: Invited Review to appear in Materials Today, 28 pages, 22 figures

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene. The resulting tunable MPE employing a simple ferromagnetic metal holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects, to Majorana fermions and skyrmions.

Monolayer transition-metal dichalcogenides (ML-TMDs) offer exciting opportunities to test the manifestations of many-body interactions through changes in the charge density. Tuning the charge density by a gate voltage leads to profound changes in the optical spectra of excitons in ML-TMDs. We review the band-gap renormalization and dynamical screening as a function of charge density, and then incorporate these effects through various approximations that model long-wavelength charge excitations in the Bethe-Salpeter Equation (BSE). We then show that coupling between excitons and shortwave charge excitations is essential to resolve several experimental puzzles. Unlike ubiquitous and well-studied plasmons, driven by collective oscillations of the background charge density in the long-wavelength limit, we discuss the emergence of shortwave plasmons that originate from the short-range Coulomb interaction through which electrons transition between the $\mathbf{K}$ and $-\mathbf{K}$ valleys. We study the coupling between the shortwave plasmons and the neutral exciton through the self-energy of the latter. We then elucidate how this coupling as well as the spin ordering in the conduction band give rise to an experimentally observed optical sideband in electron-doped W-based MLs, conspicuously absent in electron-doped Mo-based MLs or any hole-doped ML-TMDs. While the focus of this review is on the optical manifestations of many-body effects in ML-TMDs, a systematic description of the dynamical screening and its various approximations allow one to revisit other phenomena, such as nonequilibrium transport or superconducting pairing, where the use of the BSE or the emergence of shortwave plasmons can play an important role., Comment: This revised version is far more extensive. Any feedback is welcome

The two-dimensional character and reduced screening in monolayer transition-metal dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding energies orders of magnitude larger than in bulk semiconductors. Focusing on neutral excitons, bound electron-hole pairs, that dominate the optical response in TMDs, it is shown that they can provide fingerprints for magnetic proximity effects in magnetic heterostructures. These proximity effects cannot be described by the widely used single-particle description, but instead reveal the possibility of a conversion between optically inactive and active excitons by rotating the magnetization of the magnetic substrate. With recent breakthroughs in fabricating Mo- and W-based magnetic TMD-heterostructures, this emergent optical response can be directly tested experimentally., Comment: 10 pages, pages 7-10 contain supplemental material