1. New Positive EB Resist with Strong Resistance to Plasma Damage
- Author
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Yoshinori Uzawa, Mitsuo Kawamura, Akira Hirao, Nobumitsu Hirose, Hiroyuki Ozaki, Kazuo Yamaguchi, Yuuichi Harada, Shigeru Yoshimori, and Matsuo Sekine
- Subjects
Plasma etching ,Materials science ,Renewable Energy, Sustainability and the Environment ,technology, industry, and agriculture ,Infrared spectroscopy ,macromolecular substances ,Plasma ,Condensed Matter Physics ,Methacrylate ,Photochemistry ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Resist ,Polymer chemistry ,Materials Chemistry ,Electrochemistry ,Copolymer ,Methyl methacrylate ,Radiation resistance - Abstract
Copolymers of methyl methacrylate (MMA) and 3-triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4-10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF 3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma-irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross-linking structure based on the Si-O-Si linkage
- Published
- 1992
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