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As bit rates of optical interconnects increase, a large amount of complicated signal conditioning is needed to compensate for the insufficient bandwidth of current modulators. In this paper, we evaluate the reduced equalization requirements of high-bandwidth plasmonic modulators in short-reach transmission experiments. It is shown that transmission of 100 Gbit/s non-return-to-zero (NRZ) and 112 Gbit/s pulse-amplitude modulation-4 over 1 km and 2 km distance is possible without any receiver equalization. At higher bit-rates, such as 120 Gbit/s NRZ, data transmission is demonstrated over 500 m with reduced receiver equalization requirements. Transmission up to 200 Gbit/s over 1 km is also shown with more complex receiver equalization. The reduced complexity of the receiver digital signal processing is attributed to a flat frequency response of at least 108 GHz of the plasmonic modulators. All single wavelength transmissions have been performed at 1540 nm in standard single mode fiber.

A new plasmonic Mach-Zehnder modulator is demonstrated at a bit rate of 120 Gb/s NRZ-OOK with low peak-to-peak driving voltages of 178 mVpp below the HD-FEC limit. Such record low driving voltage requirements potentially translate into an electrical drive power consumption of 862 aJ/bit. The low drive voltages have been made possible by a new differential Mach-Zehnder modulator electrode design. The differential electrode design is optimized for the balanced driving circuitry and reduces the effectively required driving voltage by a factor of four (Vπ/4). The potential of the transmitter scheme is further demonstrated by a transmission experiment over 500 m of single mode fiber at the C-band with a BER performance below the KP4 FEC limit.

The microstructural and optical reflectivity response of photonic SiO2/TiO2 nanomultilayers have been investigated as a function of temperature and up to the material system’s melting point. The nanomultilayers exhibit high, broadband reflectivities up to 1350 °C with values that exceed 75% for a 1 μm broad wavelength range (600–1600 nm). The optimized nanometer sized, dielectric multilayers undergo phase transformations from anatase TiO2 and amorphous SiO2 to the thermodynamically stable phases, rutile and cristobalite, respectively, that alter their structural morphology from the initial multilayers to that of a scatterer. Nonetheless, they retain their photonic characteristics, when characterized on top of selected substrate foils. The thermal behavior of the nanometer sized multilayers has been investigated by differential thermal analysis (DTA) and compared to that of commercially available, mm-sized, annealed powders. The same melting reactions were observed, but the temperatures were lower for the nm-sized samples. The samples were characterized using X-ray powder diffraction before DTA and after annealing at temperatures of 1350 and 1700 °C. The microstructural evolution and phase compositions were investigated by scanning electron microscopy and energy-dispersive X-ray spectroscopy measurements. The limited mutual solubility of one material to another, in combination with the preservation of their optical reflectivity response even after annealing, makes them an interesting material system for high-temperature, photonic coatings, such as photovoltaics, aerospace re-entry and gas turbines, where ultra-high temperatures and intense thermal radiation are present.

A transparent Optical-subTHz-Optical link providing record-high single line rates of 240 Gbit/s and 192 Gbit/s on a single optical carrier over distances from 5 to 115 m is demonstrated. Besides a direct mapping of the optical to a 230 GHz subTHz-carrier frequency by means of a uni-traveling carrier (UTC) photodiode, we demonstrate direct conversion of data from the subTHz domain back to the optical domain by a plasmonic modulator. It is shown that the subTHz-to-optical upconversion can even be performed at good quality without any electrical amplifiers. Finally, at the receiver, the local oscillator is employed to directly map the optical signal back to the electrical baseband within a coherent receiver., Journal of Lightwave Technology, 40 (6), ISSN:0733-8724, ISSN:1558-2213

To address the challenge of increasing data rates, next-generation optical communication networks will require the co-integration of electronics and photonics. Heterogeneous integration of these technologies has shown promise, but will eventually become bandwidth-limited. Faster monolithic approaches will therefore be needed, but monolithic approaches using complementary metal–oxide–semiconductor (CMOS) electronics and silicon photonics are typically limited by their underlying electronic or photonic technologies. Here, we report a monolithically integrated electro-optical transmitter that can achieve symbol rates beyond 100 GBd. Our approach combines advanced bipolar CMOS with silicon plasmonics, and addresses key challenges in monolithic integration through co-design of the electronic and plasmonic layers, including thermal design, packaging and a nonlinear organic electro-optic material. To illustrate the potential of our technology, we develop two modulator concepts—an ultra-compact plasmonic modulator and a silicon-plasmonic modulator with photonic routing—both directly processed onto the bipolar CMOS electronics. The monolithic integration of electronic and plasmonic technologies can be used to create electro-optic transmitters capable of symbol rates beyond 100 GBd.

We summarize our experimental exploration of the capabilities of an ultrabroad-bandwidth plasmonic Mach-Zehnder modulator (MZM), in an intensity modulation and direct detection (IM/DD) system for short-reach optical transmission up to 10 km. We study modulation, transmission, and reception of ultrahigh-symbol-rate (up to 304 GBd) multi-level optical signals with two different signaling schemes: pulse amplitude modulation (PAM), with up to 8 amplitude levels and partial-response-encoded binary (polybinary) modulation with memory length up to 4. By mapping the performance to a concatenated soft-decision (SD) and hard-decision (HD) forward error correction (FEC) coding scheme, a net bitrate of 363.4 Gbit/s is possible with PAM-8 signaling and 279.0 Gbit/s with tetrabinary (polybinary) signaling after 10 km standard single-mode fiber transmission. Considering an HD-only coding scheme, a net bitrate of 318.0 Gbit/s is possible with PAM-6 and 277.1 Gbit/s with tetrabinary., Journal of Lightwave Technology, 40 (10), ISSN:0733-8724, ISSN:1558-2213

The linear electro-optic coefficient of lithium niobate on insulator (LNOI) thin films has been characterized over a broad range of modulation frequencies from 50 MHz to 270 GHz. A coefficient of 25-30 pm/V was found., Technical Digest Series, Frontiers in Optics + Laser Science 2022 (FIO, LS), ISBN:978-1-957171-17-3

The first transparent Optical-subTHz-Optical link providing record-high line-rates of 240 and 190 Gbit/s over distances from 5 to 115 m was recently demonstrated. The link has been based on a direct data-conversion from optical to subTHz using a > 500 GHz plasmonic Mach-Zehnder modulator. We discuss the potential of plasmonic devices in subTHz wireless links to efficiently bridge optical fiber networks, Proceedings of SPIE, 12027, ISSN:0277-786X, Metro and Data Center Optical Networks and Short-Reach Links V

We demonstrate highly efficient couplers in a two-dimensional grating configuration for a vertical fiber-coupling fabricated in the silicon-on-insulator platform. A combination of sub-wavelength reflectors and blazed gratings enables both high coupling efficiency and vertical grating coupling. We experimentally achieve coupling efficiencies of -2.6 dB at 1544 nm and -3.4 dB at 1536 nm for x- and y-polarized LP01 modes, respectively. The experimental results are in good agreement with the simulated -2.4 dB coupling efficiency for both polarizations at a wavelength of 1550 nm. Simulated and measured crosstalk between two polarizations were -19 dB and, IEEE Photonics Journal, 11 (4), ISSN:1943-0655

Here we show electrochemical metallization cells with compact dimensions, excellent electrical performance, and reproducible characteristics. An advanced technology platform has been developed to obtain Ag/SiO2/Pt devices with ultra-scaled footprints (15 × 15 nm2), inter-electrode distances down to 1 nm, and a transition from the OFF to ON resistance state relying on the relocation of only few atoms. This technology permits a well-controlled metallic filament formation in a highly confined field at the apex of an atomic scale tip. As a consequence of this miniaturization process, we achieve set voltages around 100 mV, ultra-fast switching times of 7.5 ns, and write energies of 18 fJ. Furthermore, we demonstrate very good cell-to-cell uniformity and a resistance extinction ratio as high as 6 · 105. Combined ab-initio quantum transport simulations and experiments suggest that the manufactured structures exhibit reduced self-heating effects due to their lower dimensions, making them very promising candidates as next-generation (non-)volatile memory components., Communications Physics, 2

Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 micron long layer of graphene with field-enhancing nano-sized metallic structures, demonstrates a high external responsivity of 0.5 A/W and a fast photoresponse way beyond 110 GHz. The high efficiency and fast response of the device enables for the first time 100 Gbit/s PAM-2 and 100 Gbit/s PAM-4 data reception with a graphene based device. The results show the potential of graphene as a new technology for highest-speed communication applications.

Plasmonic-organic hybrid technology affords the potential for exceptional bandwidth, extremely small footprint, and very low drive voltages resulting in substantially improved energy efficiency for devices. Optical loss is a well-recognized problem for plasmonic technologies but is currently addressed with some notable success. Thereby, the optimization of electrically poled organic electro-optic (OEO) materials is most critical since a large electro-optical coefficient allows implementation of short active device structures that result in lower insertion losses and lower voltage-length products. Most importantly, short structures also guarantee largest bandwidths and best energy efficiencies. Yet, an efficient optimization of in-device performance of OEO materials requires the development of novel computational simulation methods, especially as waveguide width dimensions reach tens of nanometers in plasmonic waveguides and as electrode surface/material interfacial effects become more and more dominant. The focus of this communication is on novel multi-scale modeling methods, including coarse-grained Monte Carlo statistical mechanical simulations combined with quantum mechanical methods to simulate and analyze the linear and nonlinear optical properties for high chromophore number density solid-state OEO materials. New chromophores are developed with the assistance of theory and may lead to an order of magnitude improvement in device performance.

We demonstrate low-loss fiber-to-chip coupling via a-Si grating couplers on top of SiN waveguides for C-band TE light. The suggested simple scheme is fabrication tolerant and offers a path towards coupling efficiencies above -1 dB.

The first transparent Optical-THz-Optical link providing record-high line-rates up to 240 and 190 Gbit/s over distances from 5 to 115m is demonstrated. The link is based on direct data-conversion from optical to sub-THz and vice-versa.

New high-speed photonic technologies and co-integration with electronics are required to keep up with the demand of future optical communication systems. In this paper, plasmonics is presented as one of the most promising next-generation photonic technologies that already fulfils these requirements in proof-of-concept demonstrations. Plasmonics features not only modulators and detectors of highest speed, but also compactness, cost- and energy-efficiency, and compatibility with CMOS electronics. Recently, co-integration with electronics was demonstrated with record performances of 222 GBd in a hybrid InP electronic-plasmonic transmitter assembly and of 120 GBd with a monolithic BiCMOS electronic-plasmonic transmitter., Japanese Journal of Applied Physics, 60, ISSN:0021-4922, ISSN:1347-4065