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Functionalized graphene quantum dot (GQD) based materials play an important role in the development of high-performance, low-cost, large-area optoelectronic devices. The progress, however, is impeded by the poor understanding of the physical mechanism for GQDs in these devices. In this paper, chlorine doped GQD (Cl-GQD) based photovoltaic photodetectors have been fabricated using a solution process, and it was found that the presence of Cl-GQDs can significantly enhance the performance of the device. The improved performance of Cl-GQD based devices has been investigated by systematically studying the structural, morphological, optical, electrical, electrochemical and photoelectrical properties. The important photovoltaic detectors parameters such as the saturation current densities (J0), barrier heights (Φb), built-in potentials (Vbi), carrier concentrations (N) and depletion layer widths (Wd) have been calculated and discussed by studying the I–V and C–V characteristics under different illuminations. The frequency dependent capacitance and conductance have also been discussed. The results provide guidance for developing high-performance graphene based optoelectronic devices.

The pyroelectric detector is wide used for its simple structure and high performance to price ratio. It has been used in thermal detecting, infrared spectrum and laser testing. When the pyroelectric detector was applied in practice, fast reponse speed is need. For improving the response speed of the pyroelectric detector some specific technology has been used in the preamplifier schematic. High sense and fast response character of the pyroelectric detector-preamplifier assembled device had been achieved. When the device is applied in acute concussion condition, it must survive from the acute concussion condition testing. For it reliability some specific technology was used in the device fabricating procedure. At last the performance parameter testing result and simulation application condition result given in this paper show the performance of the pyroelectric detector-preamplifier assembled device had achieved the advance goal.

UV photodetector is a kind of important optoelectronic devices that has vital applications in both scientific and engineering fields. The development of UV photodetectors has been impeded because of lacking stable p-type wide-gap semiconductor which is crucial for high-performance, low-cost, large-array UV photovoltaic detector. In this paper, we report a novel UV photovoltaic detector fabricated using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a sole photoactive material. The highest detectivity (D*) reaches 9.02 × 1011 cm Hz1/2 W−1 at −1 V bias voltage at room temperature under 365 nm illumination for the un-optimized BCP based detector (without using pre-amplifier), which is the highest value for the sole UV organic photoactive material based photovoltaic detector. The optical, electrical, and photovoltaic properties, including the UV absorption, photoluminescence (PL) emission, PL excitation, I-V, C-V, and photoresponse, have been systematically investigated to disclose the internal mechan...

Kunming Institute of Physics (KIP) had launched its project for uncooled infrared detectors from 1995. Uncooled infrared detector technology in KIP has progressed from the initial hybrid architecture, evolved through developments and now moved up to a new generation of monolithic architecture. In this paper, the history and developments of uncooled infrared detectors in KIP are briefly described.

Graphene quantum dots (GQDs) are becoming one of the hottest advanced functional materials because of the opening of the bandgap due to quantum confinement effect, which shows unique optical and electrical properties. The chlorine doped GQDs (Cl-GQDs) have been fabricated by chemical exfoliation of HCl treated carbon fibers (CFs), which were prepared from degreasing cotton through an annealing process at 1000 °C for 30 min. Raman study shows that both G and 2D peaks of GQDs may be redshifted (softened) by chlorine doping, leading to an n-type doping. The first vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbing and electron-accepting roles for (Cl)-GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as ∼105 at room temperature using a 405 nm laser irradiation under the reverse bias voltage. The study expands the application of (Cl)-GQDs to the important optoelectronic detection devices.