1. Large Silicon Abundance in Photodissociation Regions
- Author
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Okada, Yoko, Onaka, Takashi, Nakagawa, Takao, Shibai, Hiroshi, Tomono, Daigo, and Yui, Yukari Y.
- Subjects
Astrophysics - Abstract
We have made one-dimensional raster-scan observations of the rho Oph and sigma Sco star-forming regions with two spectrometers (SWS and LWS) on board the ISO. In the rho Oph region, [SiII] 35um, [OI] 63um, 146um, [CII] 158um, and the H2 pure rotational transition lines S(0) to S(3) are detected, and the PDR properties are derived as the radiation field scaled by the solar neighborhood value G_0~30-500, the gas density n~250--2500 /cc, and the surface temperature T~100-400 K. The ratio of [SiII] 35um to [OI] 146um indicates that silicon of 10--20% of the solar abundance must be in the gaseous form in the photodissociation region (PDR), suggesting that efficient dust destruction is undergoing even in the PDR and that part of silicon atoms may be contained in volatile forms in dust grains. The [OI] 63um and [CII] 158um emissions are too weak relative to [OI] 146um to be accounted for by standard PDR models. We propose a simple model, in which overlapping PDR clouds along the line of sight absorb the [OI] 63um and [CII] 158um emissions, and show that the proposed model reproduces the observed line intensities fairly well. In the sigma Sco region, we have detected 3 fine-structure lines, [OI] 63um, [NII] 122um, and [CII] 158um, and derived that 30-80% of the [CII] emission comes from the ionized gas. The upper limit of the [SiII] 35um is compatible with the solar abundance relative to nitrogen and no useful constraint on the gaseous Si is obtained for the sigma Sco region., Comment: 25 pages with 7 figures, accepted in Astrophysical Journal
- Published
- 2005
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