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Flexible organic light-emitting devices (FOLEDs) based on multiple quantum well (MQW) structures, which consist of alternate layers of 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethane (F4-TCNQ) and 4,4′,4″-tris-(3-methylphenylphe-nylamino)tripheny-lamine (m-MTDATA) have been fabricated. The Alq 3 -based device with double quantum well (DQW) structure exhibits the remarkable electroluminescent (EL) performances for the brightness of 23,500 cd/m 2 at 14 V and the maximum current efficiency of 7.0 cd/A at 300.3 mA/cm 2 , respectively, which are greatly improved by 114% and 56% compared with the brightness of 10,958 cd/m 2 at 14 V and the maximum current efficiency of 4.5 cd/A at 174.0 mA/cm 2 for the conventional device without MQW structures. These results demonstrate that the EL performances of FOLEDs could be greatly improved by utilizing the novel MQW structures, and the reason for this improvement has also been explained by the effect of interfacial dipole and interfacial doping between F4-TCNQ and m-MTDATA in this article.

The driving voltage of an organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO3)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in the hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO3 (2.5 nm)/NPB (20 nm)]2/Alq3(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), and the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m2. In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reduced energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.

We fabricate a kind of novel efficient blue fluorescent organic light emitting device (OLED) based on p-n hetero-junctions composed of hole transporting layer (HTL) N, N'-bis(naphthalen-1-yl)-N, N'-bis(phenyl)-benzidine (NPB) and electron transporting layer (ETL) 4,7-diphnenyl-1,10-phenanthroline (BPhen), into which a new blue material, DNCA (a derivation of N6, N6, N12, N12-tetrap-tolylchrysene-6,12-diamine), is partially doped simultaneously, and double emitting layers are configured. With a turn-on voltage of 2.6 V at 1 cd/m2, this type of OLED presents a maximum luminance efficiency (ηmax) of 8.83 cd/A at 5.818 mA/cm2 and a maximum luminance of over 40000 cd/m2. Meanwhile, the Commission Internationale De L'Eclairage (CIE) coordinates of this device change slightly from (0.13, 0.27) to (0.13, 0.23) as the driving voltage increases from 3 V to 11 V. This improvement in the electroluminescent characteristics is attributed mainly to the ideal p—n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.

The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'-biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq3) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.