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Abstract Printed amplifiers are promising components for flexible and wearable devices. The circuits need to have small footprint, high amplification, and low power consumption, which is not simultaneously possible with conventional thin‐film transistors because multiple stages are required and introduce sources of variability, failure, or wasted area. Source‐gated transistors (SGTs) can in principle have extremely high intrinsic gain but this is not always the case because of lateral field control problems. A good solution is the use of field plate structures, which are straightforward to implement with top contacts but not so with bottom contacts. Here, a printed implementation of organic SGT with a field plate is presented, which can achieve a record high intrinsic gain of 920 V/V. The single‐stage common‐source amplifier with two organic SGTs also exhibits a high gain of 700 V/V. Simulations confirm the effectiveness of the printed field plate, making it a promising approach for future flexible and wearable electronics.

Source-gated transistors (SGTs) are emerging devices enabling high-gain single-stage amplifiers with low complexity. To date, the p-type printed organic SGT (OSGT) has been developed and showed high gain and low power consumption. However, complementary OSGT circuits remained impossible because of the lack of n-type OSGTs. Here, we show the first n-type OSGTs, which are printed and have a high intrinsic gain over 40. A Schottky source contact is intentionally formed between an n-type organic semiconductor, poly{[N,N′-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (N2200), and the silver electrode. In addition, a blocking layer at the edge of the source electrode plays an important role to improve the saturation characteristics and increase the intrinsic gain. Such n-type printed OSGTs and complementary circuits based on them are promising for flexible and wearable electronic devices such as for physiological and biochemical health monitoring.