Search

Centaurs, distinguished by their volatile-rich compositions, play a pivotal role in understanding the formation and evolution of the early solar system, as they represent remnants of the primordial material that populated the outer regions. Stellar occultations offer a means to investigate their physical properties, including shape, rotational state, or the potential presence of satellites and rings. This work aims to conduct a detailed study of the centaur (54598) Bienor through stellar occultations and rotational light curves from photometric data collected during recent years. We successfully predicted three stellar occultations by Bienor, which were observed from Japan, Eastern Europe, and the USA. In addition, we organized observational campaigns from Spain to obtain rotational light curves. At the same time, we develop software to generate synthetic light curves from three-dimensional shape models, enabling us to validate the outcomes through computer simulations. We resolve Bienor's projected ellipse for December 26, 2022, determine a prograde sense of rotation, and confirm an asymmetric rotational light curve. We also retrieve the axes of its triaxial ellipsoid shape as a = (127 $\pm$ 5) km, b = (55 $\pm$ 4) km, and c = (45 $\pm$ 4) km. Moreover, we refine the rotation period to 9.1736 $\pm$ 0.0002 hours and determine a geometric albedo of (6.5 $\pm$ 0.5) %, higher than previously determined by other methods. Finally, by comparing our findings with previous results and simulated rotational light curves, we analyze whether an irregular or contact-binary shape, the presence of an additional element such as a satellite, or significant albedo variations on Bienor's surface, may be present.

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin initialization and readout. Existing schemes rely on Zeeman splitting or Pauli spin blockade with typical energy scales of 0.1 or 1 meV for electron-based qubits, so that sufficient fidelity is obtained only at temperatures around or below 0.1 or 1 K, respectively. Here we describe a method to achieve high temperature spin selectivity in a quantum dot using a reservoir with a spin accumulation, which deterministically sets the spin of a single electron on the dot. Since spin accumulation as large as 10 meV is achievable in silicon, spin selection with electrically adjustable error rates below $10^{-4}$ is possible even in a liquid He bath at 4 K. Via the reservoir spin accumulation, induced and controlled by a nearby ferromagnet, classical information (magnetization direction) is mapped onto a spin qubit. These features provide the prospect of spin qubit operation at elevated temperatures and connect the worlds of quantum computing and spintronics., Comment: Supplementary material available via the journal reference

The recent demonstration of neuromorphic computing with spin-torque nano-oscillators has opened a path to energy efficient data processing. The success of this demonstration hinged on the intrinsic short-term memory of the oscillators. In this study, we extend the memory of the spin-torque nano-oscillators through time-delayed feedback. We leverage this extrinsic memory to increase the efficiency of solving pattern recognition tasks that require memory to discriminate different inputs. The large tunability of these non-linear oscillators allows us to control and optimize the delayed feedback memory using different operating conditions of applied current and magnetic field.

Fabricating powerful neuromorphic chips the size of a thumb requires miniaturizing their basic units: synapses and neurons. The challenge for neurons is to scale them down to submicrometer diameters while maintaining the properties that allow for reliable information processing: high signal to noise ratio, endurance, stability, reproducibility. In this work, we show that compact spin-torque nano-oscillators can naturally implement such neurons, and quantify their ability to realize an actual cognitive task. In particular, we show that they can naturally implement reservoir computing with high performance and detail the recipes for this capability.

Can we build small neuromorphic chips capable of training deep networks with billions of parameters? This challenge requires hardware neurons and synapses with nanometric dimensions, which can be individually tuned, and densely connected. While nanosynaptic devices have been pursued actively in recent years, much less has been done on nanoscale artificial neurons. In this paper, we show that spintronic nano-oscillators are promising to implement analog hardware neurons that can be densely interconnected through electromagnetic signals. We show how spintronic oscillators maps the requirements of artificial neurons. We then show experimentally how an ensemble of four coupled oscillators can learn to classify all twelve American vowels, realizing the most complicated tasks performed by nanoscale neurons.

The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that there is no applied bias, as in nonlocal spin detection. It is shown here that in a biased ferromagnetic tunnel contact, spin detection is strongly nonlinear. As a result, the spin-detection efficiency is not equal to the tunnel spin polarization. In silicon-based 4-terminal spin-transport devices, even a small bias (tens of mV) across the Fe/MgO detector contact enhances the spin-detection efficiency to values up to 140 \% (spin extraction bias) or, for spin injection bias, reduces it to almost zero, while, parenthetically, the charge current remains highly spin polarized. Calculations reveal that the nonlinearity originates from the energy dispersion of the tunnel transmission and the resulting nonuniform energy distribution of the tunnel current, offering a route to engineer spin conversion. Taking nonlinear spin detection into account is also shown to explain a multitude of peculiar and puzzling spin signals in structures with a biased detector, including two- and three-terminal devices, and provides a unified, consistent and quantitative description of spin signals in devices with a biased and unbiased detector., Comment: 13 pages, 7 figures

Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvolatile memory. Analytical expressions of the conditions for precessional switching are derived.

In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show that it is also possible to lock the oscillator on its side band peaks, which opens a new avenue to phase locked oscillators with large frequency differences. We observe that for low driving fields, side band locking improves the quality factor of the main peak, whereas for higher driving fields the main peak is suppressed. Further, measurements at two field angles provide some insight into the role of symmetry of oscillation orbit in determining the fractional locking., Comment: 16 pages, 6 figure(Manuscript), 3 figure( supplementary information),Accepted ( Physical Review Applied)

Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here, using non-local spin-transport devices with an n-type Si channel and Fe/MgO magnetic tunnel contacts, we demonstrate that it is possible to create a giant spin accumulation in Si, with the spin splitting reaching 13 meV at 10 K and 3.5 meV at room temperature. The non-local spin signals are in good agreement with a numerical evaluation of spin injection and diffusion that explicitly takes the size of the injector contact into account. The giant spin accumulation originates from the large tunnel spin polarization of the Fe/MgO contacts (53 % at 10 K and 18 % at 300 K), and the spin density enhancement achieved by using a spin injector with a size comparable to the spin-diffusion length of the Si. The ability to induce a giant spin accumulation enables the development of Si spintronic devices with a large magnetic response.

Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC. We showed that PMA and its VC can be enhanced by controlled Cr doping at the Fe/MgO interface. For Cr/Fe (5.9 {\AA})/Cr (0.7 {\AA})/MgO with an effective PMA of 0.8 MJ/m3, a maximum value of the voltage-controlled magnetic anisotropy (VCMA) effect of 370 fJ/Vm was demonstrated.

The mutual interaction between the different eigenmodes of a spin-torque oscillator can lead to a large variety of physical mechanisms from mode hopping to multi-mode generation, that usually reduce their performances as radio-frequency devices. To tackle this issue for the future applications, we investigate the properties of a model spin-torque oscillator that is composed of two coupled vortices with one vortex in each of the two magnetic layers of the oscillator. In such double-vortex system, the remarkable properties of energy transfer between the coupled modes, one being excited by spin transfer torque while the second one being damped, result into an alteration of the damping parameters. As a consequence, the oscillator nonlinear behavior is concomitantly drastically impacted. This efficient coupling mechanism, driven mainly by the dynamic dipolar field generated by the spin transfer torque induced motion of the vortices, gives rise to an unexpected dynamical regime of self-resonance excitation. These results show that mode coupling can be leveraged for controlling the synchronization process as well as the frequency tunability of spin-torque oscillators., Comment: 7 pages, 5 figures

The transfer of spin angular momentum to a nanomagnet from a spin polarized current provides an efficient means of controlling the magnetization direction in nanomagnets. A unique consequence of this spin torque is that the spontaneous oscillations of the magnetization can be induced by applying a combination of a dc bias current and a magnetic field. Here we experimentally demonstrate a different effect, which can drive a nanomagnet into spontaneous oscillations without the need of external spin torque injection. For the demonstration of this effect, we use a nano-pillar of magnetic tunnel junction (MTJ) powered by a dc current and connected to a coplanar waveguide (CPW) lying above the free layer of the MTJ. Any fluctuation of the free layer magnetization is converted into oscillating voltage via the tunneling magneto-resistance effect and is fed back into the MTJ by the CPW through inductive coupling. As a result of this feedback, the magnetization of the free layer can be driven into a continual precession. The combination of MTJ and CPW behaves similar to a laser system and outputs a stable rf power with quality factor exceeding 10,000., Comment: 15 Pages, 6 Figures

When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to the thermal energy at room temperature. Then, switches of the magnetization spontaneously occur. These volatile, superparamagnetic nanomagnets are generally considered useless. But what if we could use them as low power computational building blocks? Remarkably, they can oscillate without the need of any external dc drive, and despite their stochastic nature, they can beat in unison with an external periodic signal. Here we show that the phase locking of superparamagnetic tunnel junctions can be induced and suppressed by electrical noise injection. We develop a comprehensive model giving the conditions for synchronization, and predict that it can be achieved with a total energy cost lower than 10-^13 J. Our results open the path to ultra-low power computation based on the controlled synchronization of oscillators., Comment: 19 pages, 3 figures

The concept of spin torque driven high frequency magnetization dynamics has opened up the field of spintronics to non-linear physics, potentially in complex networks of dynamical systems. In the scarce demonstrations of synchronized spin-torque oscillators, the local nature of the magnetic coupling that is used have largely hampered a good understanding and thus the control of the synchronization process. Here we take advantage of the non-local nature of an electrical coupling to mutually synchronize spin-torque oscillators through their self-emitted microwave currents. The control of the synchronized state is achieved at the nanoscale through two active components of spin transfer torques, but also externally through an electrical delay line. These additional levels of control of the synchronization capability provide new approaches to underlie a large variety of nanoscale collective dynamics in complex networks., Comment: 8 pages, 3 figures

The self-synchronization of spin torque oscillators is investigated experimentally by re-injecting its radiofrequency (rf) current after a certain delay time. We demonstrate that the emission power and the spectral linewidth are improved for optimal delay times. Moreover by varying the phase difference between the emitted power and the re-injected one, we find a clear oscillatory dependence with a 2\pi\ periodicity of the frequency of the oscillator as well as its power and linewidth. Such periodical behavior within the self-injection regime is well described by the general model of nonlinear auto-oscillators including not only a delayed rf current but also all spin torque forces responsible for the self-synchronization. Our results reveal new approaches for controlling the non-autonomous dynamics of spin torque oscillators, a key issue for rf spintronics applications as well as for the development of neuro-inspired spin-torque oscillators based devices.

Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction. When the excitation radius of the vortex core is greater than that of the junction radius, vortex core expulsion is observed, leading to a large change in resistance, as the layer enters a predominantly uniform magnetisation state. Unlike the conventional spin-torque diode effect, this highly tunable resonant effect will generate a voltage which does not decrease as a function of rf power, and has the potential to form the basis of a new generation of tunable nanoscale radio-frequency detectors.

We investigate experimentally the synchronization of a vortex based spin transfer oscillator to an external rf current whose frequency is at multiple integers, as well as half integer, of the oscillator frequency. Through a theoretical study of the locking process, we highlight both the crucial role of the symmetries of the spin torques acting on the magnetic vortex and the nonlinear properties of the oscillator on the phase locking process. Through the achievement of a perfect injection locking state, we report a record phase noise reduction down to -90dBc/Hz at 1 kHz offset frequency. The phase noise of these nanoscale oscillators is demonstrating as being low and controllable which is of significant importance for real applications using spin transfer devices.

A method for the substantial reduction of propagation loss of surface plasmons was proposed and experimentally demonstrated. The method is based on the fact that the propagation loss of the surface plasmons depends significantly on the optical confinement of the plasmon. A plasmonic structure, which contains a metal and two dielectric layers of different refractive indexes, is proposed in order to optimize optical confinement and to reduce propagation loss of the surface plasmons. A low propagation loss of 0.17 dB/um for a surface plasmon in a Fe/MgO/AlGaAs plasmonic structure was achieved. A good coupling efficiency of 2.2 dB/facet between a surface plasmon in Fe/MgO/AlGaAs and a waveguide mode in AlGaAs/GaAs optical waveguide was demonstrated., Comment: 6 pages, 4 figures

Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation and spin precession are observed up to 200 K. Strikingly, the observed spin voltage is several orders of magnitude larger than predicted by the theory of spin injection and diffusive spin transport. Since the devices have no oxide tunnel barrier, the discrepancy between theory and experiments cannot be explained by the often-invoked spin accumulation in localized states associated with the oxide or oxide/semiconductor interface. The observed spin voltages therefore must originate from the Ge itself, either from spins in the Ge bulk bands or its depletion region., Comment: Related to the submission by R. Jansen et al., arXiv:1410.3994 (2014)

The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is small, the expression for the spin voltage is identical to that of linear transport. However, if the spin accumulation is comparable to the characteristic energy scale that governs the degree of non-linearity, the spin detection sensitivity and the spin voltage are notably reduced. Moreover, the non-linearity enhances the back-flow of spins into the ferromagnet and its detrimental effect on the injected spin current, and the contact resistance required to avoid back-flow is larger than for linear transport. It is also shown that by virtue of the non-linearity, a non-magnetic metal contact can be used to electrically detect spin accumulation in a semiconductor., Comment: Added appendix with general considerations about changes of the spin-detection sensitivity due to non-linearity; updated reference 51 to the related experimental manuscript by Spiesser et al. Phys. Rev. B 90, 205213 (2014) [and ArXiv:1410.4277]

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed., Comment: 12 pages, 3 figures

We experimentally demonstrate that large magnetic vortex oscillations can be parametrically excited in a magnetic tunnel junction by the injection of radio-frequency (rf) currents at twice the natural frequency of the gyrotropic vortex core motion. The mechanism of excitation is based on the parallel pumping of vortex motion by the rf orthoradial field generated by the injected current. Theoretical analysis shows that experimental results can be interpreted as the manifestation of parametric amplification when rf current is small, and of parametric instability when rf current is above a certain threshold. By taking into account the energy nonlinearities, we succeed to describe the amplitude saturation of vortex oscillations as well as the coexistence of stable regimes., Comment: Submitted to Phys. Rev. Lett

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $\Omega\mu m^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current., Comment: 10 pages, 8 figures

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in itself, but in parallel with direct tunneling. The spin accumulation induced in the semiconductor channel is not suppressed, as previously argued, but genuinely enhanced by the additional spin current via interface states. Spin detection with a ferromagnetic contact yields a weighted average of the spin accumulation in the channel and in the localized states. In the regime where the spin accumulation in the localized states is much larger than that in the channel, the detected spin signal is insensitive to the spin accumulation in the localized states and the ferromagnet probes the spin accumulation in the semiconductor channel., Comment: 7 pages, 2 figures. Theory only

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted., Comment: To appear in Appl. Phys. Express

The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of spin-angular momentum across a tunnel barrier without a charge tunnel current. In ferromagnet/insulator/semiconductor tunnel junctions this can be used to induce a spin accumulation (\Delta \mu) in the semiconductor in response to a temperature difference (\Delta T) between the electrodes. A phenomenological framework is presented to describe the thermal spin transport in terms of parameters that can be obtained from experiment or theory. Key ingredients are a spin-polarized thermoelectric tunnel conductance and a tunnel spin polarization with non-zero energy derivative, resulting in different Seebeck tunnel coefficients for majority and minority spin electrons. We evaluate the thermal spin current, the induced spin accumulation and \Delta\mu/\Delta T, discuss limiting regimes, and compare thermal and electrical flow of spin across a tunnel barrier. A salient feature is that the thermally-induced spin accumulation is maximal for smaller tunnel resistance, in contrast to the electrically-induced spin accumulation that suffers from the impedance mismatch between a ferromagnetic metal and a semiconductor. The thermally-induced spin accumulation produces an additional thermovoltage proportional to \Delta\mu, which can significantly enhance the conventional charge thermopower. Owing to the Hanle effect, the thermopower can also be manipulated with a magnetic field, producing a Hanle magnetothermopower., Comment: 10 pages, 3 figures, 1 table

The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the reduced non-linearities compared to the uniform magnetization case, we first observe a linear decrease of linewidth with decreasing temperature. However, this expected behavior no longer applies at lower temperature and a bottom limit of the linewidth is measured., Comment: submitted to APL

The origin and properties of the transverse non-reciprocal magneto-optical (nMO) effect were studied. The transverse nMO effect occurs in the case when light propagates perpendicularly to the magnetic field. It was demonstrated that light can experience the transverse nMO effect only when it propagates in the vicinity of a boundary between two materials and the optical field at least in one material is evanescent. The transverse nMO effect is pronounced in the cases of surface plasmons and waveguiding modes. The magnitude of the transverse nMO effect is comparable to or greater than the magnitude of the longitudinal nMO effect. In the case of surface plasmons propagating at a boundary between the transition metal and the dielectric it is possible to magnify the transverse nMO effect and the magneto-optical figure-of-merit may increase from a few percents to above 100%. The scalar dispersion relation, which describes the transverse MO effect in cases of waveguide modes and surface plasmons propagating in a multilayer MO slab, was derived.

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency.

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices.

Phase locking experiments on vortex based spin transfer oscillators with an external microwave current are performed. We present clear evidence of phase locking, frequency pulling, as well as fractional synchronization in this system, with a minimum peak linewidth of only 3 kHz in the locked state. We find that locking ranges of the order of 1/3 of the oscillator frequency are easily achievable because of the large tunability $\partial f/\partial I_{dc}$ observed in our vortex based systems. Such large locking ranges allow us to demonstrate the simultaneous phase locking of two independent oscillators connected in series with the external source.

Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a nanometer scale, CMOS compatible and tunable microwave generator operating at low bias for future wireless communications. Microwave emission generated by the persitent motion of magnetic vortices induced by spin transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, where such vortex oscillations have been observed, the resulting microwave power is much too small. Here we present experimental evidences of spin-transfer induced core vortex precessions in MgO-based magnetic tunnel junctions with similar good spectral quality but an emitted power at least one order of magnitude stronger. More importantly, unlike to others spin transfer excitations, the thorough comparison between experimental results and models provide a clear textbook illustration of the mechanisms of vortex precessions induced by spin transfer.

We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed when the frequency of the input microwave current coincides with the resonance frequency of the magnetization of the active layer. In addition, we demonstrate that frequency conversion is the result of amplitude modulation between the reference signal and the resistance of the MTJ that is fluctuating at the resonance frequency of the magnetization of the active layer., Comment: 9 pages, 2 figures

We demonstrate the strong impact of the oscillator agility on the line broadening by studying spin transfer induced microwave emission in MgO-based tunnel junctions with current. The linewidth is almost not affected by decreasing the temperature. At very low currents, a strong enhancement of the linewidth at low temperature is attributed to an increase of the non linearity, probably due to the field-like torque. Finally we evidence that the noise is not dominated by thermal fluctuations but rather by the chaotization of the magnetization system induced by the spin transfer torque., Comment: 12 pages, 3 figures, published in Phys. Rev. B 80, 060404 (2009)

We report the rectifying effect of a constant-wave radio frequency (RF) current by a magnetic domain wall (DW) on a single-layered ferromagnetic wire. A direct-current (DC) voltage is generated by the spin torque diode effect, which is a consequence of magnetoresistance oscillation due to the resonant spin wave excitation induced by the spin-polarized RF current. The DC voltage spectrum strongly depends on the internal spin structure in the DW, which corresponds to the magnetic fingerprint of the spin structure in the ferromagnetic wire., Comment: 18 pages, 4 figures

We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the rectification is discussed in terms of the spin torque diode effect reported for magnetic tunnel junction devices and the rectification is shown to be direct attributable to resonant spin wave excitation by the RF current., Comment: 20 Pages, 4 figures, submitted