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A considerable enhancement in the photovoltaic performance of plasmonic silicon solar cells using indium nanoparticles on a patterned TiO2 matrix was demonstrated experimentally. For characterizing the optical properties of the patterned TiO2 matrix with and without indium nanoparticles, the indium nanoparticles were deposited on the reference samples with 30- and 59.5-nm thick TiO2 layers and on the test samples with a patterned TiO2 matrix of 30- and 59.5-nm thick profiles. The optical reflectance of all samples before and after depositing indium nanoparticles on the TiO2 layer was measured. To study plasmonics and anti-reflective effects on solar cells, the cells with indium nanoparticles on a patterned TiO2 matrix with a profile coverage levels of 20%, 40%, 60%, and 80% were characterized. The photovoltaic performance under one-sun AM 1.5 G illumination and the external quantum efficiency (EQE) of the cells were measured and compared. Compared to a bare cell, the plasmonic cell with a patterned TiO2 matrix of 40% profile coverage had a short-circuit current density (Jsc) enhancement of 30.98% (from 23.53 mA/cm2 to 30.82 mA/cm2) and a conversion efficiency (η) enhancement of 34.06% (from 9.63% to 12.91%). The improvements may be attributed to the combination of the reduction of reflection and the plasmonic scattering of incident-light by indium-nanoparticles on the patterned TiO2 matrix.

We demonstrate experimentally the enhanced performance of the plasmonic silicon solar cell by using a nano-sized indium-particles and different thickness of TiO2 space layer structure. The optical reflectance, dark and photo current-voltage, and external quantum efficiency are measured and compared at each stages of processing. The conversion efficiencies enhancing of 17.78%, 27.5% and of 47.85% are obtained as the solar cell with indium nanoparticles on a 10-nm, a 30-nm and a 59.5-nm thick TiO2 space layer, respectively, compared to the solar cell without coated a TiO2 layer. Furthermore, the plasmonics conversion efficiency depend on the thickness of space layer are also demonstrated that the increasing by 15.46%, 12.1% and 6.08% for the solar cells with a 10-nm, 30-nm and 59.5-nm thick TiO2 space layer, respectively, were obtained.

We demonstrate experimentally the photovoltaic performance enhancement of the plasmonics silicon solar cell based on nano-sized indium-particles and different thickness of TiO 2 space layer. The reflectance, photo-current and external quantum efficiency are measured and compared at each stages of device processing. The conversion efficiencies enhancing of 17.78% and of 47.85% are obtained as the solar cell with indium nanoparticles on a 10-nm and a 59.5-nm thick TiO 2 space layer, respectively, compared to the solar cell without coated a TiO 2 layer. Furthermore, the plasmonics conversion efficiencies depend on the thickness of space layer are also demonstrated that the increasing by 15.46% and 6.08% for the solar cells with 10-nm and a 59.5-nm thick TiO 2 space layer, respectively.

We demonstrate the enhanced performances of Si-solar-cells using the spin-on-film device-processes and Indium-nanoparticle plasmonics. The short-circuit-current of the cell with indium-nanoparticles-plasmonics increase by 56.03% (from 3.48 to 5.43 mA) is obtained, compared to the bare-solar-cell.

We demonstrate MOS-structure silicon solar-cells using a biasing antireflective-ITO-electrode to enhance the photovoltaic performance. The enhancement of the short-circuit-current and conversion-efficiency was confirmed by the light-current-voltage and induced-junction-capacitance measurements when applied 0-2.5 V-biasing on ITO-electrode.