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Microwave optomechanical circuits have been demonstrated in the past years to be extremely powerfool tools for both, exploring fundamental physics of macroscopic mechanical oscillators as well as being promising candidates for novel on-chip quantum limited microwave devices. In most experiments so far, the mechanical oscillator is either used as a passive device element and its displacement is detected using the superconducting cavity or manipulated by intracavity fields. Here, we explore the possibility to directly and parametrically manipulate the mechanical nanobeam resonator of a cavity electromechanical system, which provides additional functionality to the toolbox of microwave optomechanical devices. In addition to using the cavity as an interferometer to detect parametrically modulated mechanical displacement and squeezed thermomechanical motion, we demonstrate that parametric modulation of the nanobeam resonance frequency can realize a phase-sensitive parametric amplifier for intracavity microwave photons. In contrast to many other microwave amplification schemes using electromechanical circuits, the presented technique allows for simultaneous cooling of the mechanical element, which potentially enables this type of optomechanical microwave amplifier to be quantum-limited.

Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits., Comment: Accepted for Publication in Nature Communications

We report on a technique for applying a DC bias in a 3D microwave cavity. We achieve this by isolating the two halves of the cavity with a dielectric and directly using them as DC electrodes. As a proof of concept, we embed a variable capacitance diode in the cavity and tune the resonant frequency with a DC voltage, demonstrating the incorporation of a DC bias into the 3D cavity with no measurable change in its quality factor at room temperature. We also characterize the architecture at millikelvin temperatures and show that the split cavity design maintains a quality factor $Q_\text{i} \sim 8.8 \times 10^5$, making it promising for future quantum applications.

We study mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor ($Q$) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-$Q$ modes of the membranes show a diverging increase of $Q$ with decreasing temperature, reaching $Q=1.27\times10^8$ at 14 mK, an order of magnitude higher than reported before. The ultra-low dissipation makes the membranes highly attractive for the study of optomechanics in the quantum regime, as well as for other applications of optomechanics such as microwave to optical photon conversion., Comment: 12 pages, 4 figures

In cavity optomechanics, light is used to control mechanical motion. A central goal of the field is achieving single-photon strong coupling, which would enable the creation of quantum superposition states of motion. Reaching this limit requires significant improvements in optomechanical coupling and cavity coherence. Here we introduce an optomechanical architecture consisting of a silicon nitride membrane coupled to a three-dimensional superconducting microwave cavity. Exploiting their large quality factors, we achieve an optomechanical cooperativity of 146,000 and perform sideband cooling of the kilohertz-frequency membrane motion to 34$\pm$5 $\mu$K, the lowest mechanical mode temperature reported to date. The achieved cooling is limited only by classical noise of the signal generator, and should extend deep into the ground state with superconducting filters. Our results suggest that this realization of optomechanics has the potential to reach the regimes of ultra-large cooperativity and single-photon strong coupling, opening up a new generation of experiments.

We report a technique for applying a dc bias in a 3d microwave cavity. This is achieved by isolating the two halves of the cavity with a dielectric and directly using them as dc electrodes. By embedding a variable capacitance diode in the cavity, we tune the resonant frequency with a dc voltage at room temperature, demonstrating the introduction of a dc bias into the 3d cavity without compromising its high quality factor., Comment: The article was replaced by a different extended article with extra data. See arXiv:1704.07220

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples., Comment: 16 pages, 7 figures

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state., Comment: 4 pages, 3 figures