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A photovoltaic effect has been discovered at a contact between a semiconductor and biological origin materials. Photoelectrical properties of the new type structures have been investigated. Structures consisting of a semiconductor and materials of biological origin can be used as photovoltaic converters for natural and linearly polarized light. It needs for information transmission over distances, as well as for analysis of the polarization state of the laser radiation in communication systems.

The work is devoted to study of polarization photosensitivity of structure on the basis of ZnSe single crystals. To produce such photosensitive structure we used heat treatment of ZnSe substrates on dry air. The polarization photosensitivity was detected and studied in relation to their manufacturing conditions and photoregistration configuration. We conclude that such photosensitive structure can be used as polarimetric short wavelength photodetector.

A new non-vacuum technology is proposed and anisotype photosensitive heterojunctions (native oxide of a narrow-gap III–V semiconductor)-(binary compound) p-GaSb(Ox)/n-GaSb are fabricated for the first time. The developed technological process is based on the surface thermal interaction of a GaSb crystal with components of the normal Earth atmosphere. Based on original physical-technological studies of interaction in the GaSb/(air medium) system, it is found that p-GaSb(Ox) native-oxide films obtained in such a way exhibit high adhesion to the surface of the initial gallium antimonide n-GaSb. The steady-state current-voltage characteristics and spectral dependences of the relative photoconversion quantum efficiency of the obtained p-GaSb(Ox)/n-GaSb heterojunctions are first measured. On this basis, the systematic features of charge transport and photosensitivity are discussed. A new possible application of the non-vacuum thermal oxidation of GaSb films in the development of optical radiation photodetectors on substrates of homogeneous gallium antimonide n-GaSb crystals is first detected and implemented.

Photosensitive heterostructures Ox/n-GaP, where Ox is a native oxide, are created for the first time by thermal interaction of a GaP crystal with ambient air. The photovoltaic effect of the heterostructures, which dominates upon illumination of the structure’s oxide film, is revealed. First, the spectral dependences of the relative quantum efficiency of photoconversion for the obtained heterostructures are analyzed, the character of the band-to-band transitions is determined, and the GaP band gap is estimated. A conclusion is drawn regarding the potential of using the vacuum-free thermal oxidation of homogeneous n-GaP single crystals in ambient air to fabricate broadband photoconverters of optical radiation.

The results of measuring the first spectra of relative quantum efficiency for photoconversion in thin-film ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells fabricated on rigid (glass) and flexible (polyimide) substrates are reported. The character of interband transitions has been studied and the values of the band gap for direct and indirect transitions in thin Cu(In,Ga)Se2 films are determined. It is found that a shift of the maximal photosensitivity for the obtained solar cells to shorter wavelengths is observed as rigid substrates are replaced by flexible ones. It is concluded that thin-film Cu(In,Ga)Se2 structures can be used as broad-band photoconverters of solar radiation.

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS2 samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS2 has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS2, we have n(T) ∝ T1.2; in isoelectron compound Cu1.13Fe1.22Te2, we have n(T) ∝ T1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS2, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.

Using directional crystallization of the melt of the (FeIn2S4) x (MnIn2S4)1 − x alloy, homogeneous crystals of a similar atomic composition are grown over the entire range of compositions 1 ≥ x ≥ 0. It is established that the crystals of the continuous series of quaternary alloys in the range x = 0–1 crystallize in the spinel structure and lattice parameter a linearly depends on x. It is established that it is possible to obtain In(Al)/(FeIn2S4) x (MnIn2S4)1–x photosensitive structures. Room-temperature spectra of relative quantum efficiency of photoconversion of the In(Al)/(FeIn2S4) x (MnIn2S4)1 − x structures fabricated for the first time are obtained. From the analysis of these spectra, activation energies of direct and indirect band-to-band transitions for the crystals of the (FeIn2S4) x (MnIn2S4)1–x alloys are determined and the dependence of these parameters on the composition of the position-disordered phases of mentioned alloys is discussed. It is concluded that the crystals of the (FeIn2S4) x (MnIn2S4)1 − x alloys can be used in broadband photoconverters of optical radiation.

A new ternary compound is synthesized for the first time, and bulk CuIn5Te8 single crystals are grown by directed crystallization of near-stoichiometric melt. It is established from X-ray diffraction patterns of grown crystals that they exhibit the structure of imperfect chalcopyrite with parameters of the unit cell of CuIn5Te8, which were close to those known for the CuInTe2 ternary compound with the composition index n = 0. First, photosensitive structures are fabricated based on CuIn5Te8 crystals, and photosensitivity spectra are obtained for them; it is shown that it is possible to achieve broadband photosensitivity under illumination of the barrier side of these crystals. From the analysis of photosensitivity spectra, the character of band-to-band transitions and corresponding energies of these transitions in CuIn5Te8 are determined. This opens up prospects to use this new semiconductor in photoconverters of solar radiation.

The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS2, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature range 10–310 K. It has been revealed that the quantities χ(T) and M(T) increase anomalously strongly at temperatures below ∼100 K. The temperature dependence M(T) is affected by the magnetic prehistory of the sample. An analysis has demonstrated that the magnetic anomalies are associated with the presence of a system of noninteracting magnetic clusters in the CuFeS2 sample under investigation. The formation of the clusters is most likely caused by the disturbance of the ordered arrangement of Fe and Cu atoms in the metal sublattice of the chalcopyrite, which is also responsible for the phase inhomogeneity of the crystal lattice. The inhomogeneity brings about strong phonon scattering, and, as a result, the temperature dependence of the thermal conductivity coefficient exhibits a behavior characteristic of partially disordered crystals.

Homogeneous p-Ag3AsS3 bulk single crystals with rhombic structure have been grown by planar crystallization from melts with atomic composition corresponding to this ternary compound. Photosensitive surface-barrier structures based on the interface between the surface of these crystals and thin films of pure indium are fabricated for the first time. The photosensitivity of fabricated structures is studied in natural and linearly polarized light. Photosensitivity spectra of In/p-Ag3AsS3 structures are measured for the first time and used to determine the nature and energy of interband transitions in p-Ag3AsS3 crystals. The phenomenon of natural photopleochroism is studied for surface-barrier structures grown on oriented p-Ag3AsS3 single crystals. It is concluded that Ag3AsS3 single crystals can be used in photoconverters of natural and linearly polarized light.

The presented work demonstrates new results of studying the photoluminescence kinetics of green leaves of Brassica rapa L. that were separated from the parent plant and in fact is the logical devel ...

Large (50 mm long, 20 mm in diameter) CdP2 single crystals with tetragonal symmetry are grown by vapor-phase crystallization for the first time. The unit cell parameters of the single crystals are determined, and it is shown that they have the stoichiometric composition of cadmium diphosphide. Photosensitive In(Cu)/CdP2 structures are fabricated, and their photosensitivity spectra are investigated. It is found that these structures exhibit broadband photosensitivity. The mechanism of photoelectric conversion and the type of interband transitions are discussed. From indirect and direct interband transitions, the bandgap values that are responsible for edge absorption are determined. It is concluded that CdP2 single crystals are feasible for broadband optical converters.

An athermal nonvacuum technology was suggested and implemented, and nonclassically polyconjugated polydisalicylidene azomethyne/Si(GaAs) heterojunctions were fabricated for the first time. It was found that the highest photosensitivity of these heterojunctions is attained upon exposure to light in the spectral range of 1–3.5 eV of the side of thin polymer films. It was concluded that new heterojunctions can be used as broadband photoconverters of optical radiation.

We used vapor-phase crystallization to grow homogeneous single crystals of the compound CdP2 of diameter 20 mm and length up to 50 mm. We determined the unit cell parameters and the composition of the single crystals grown. We created photosensitive In/CdP2 surface barrier structures and studied their photosensitivity spectra. Based on these studies, we established the broadband character of the photosensitivity of the structures, the nature of the photoconversion processes, and the type of interband transitions. We conclude that it is possible to use CdP2 single crystals as broadband photoconverters for natural light.

Complete mutual solubility in the (In2S3) x (FeIn2S4)1 − x system is established. The technology is developed, and single crystals of the continuous series of the (In2S3) x (FeIn2S4)1 − x solid solutions are grown for the first time. The linear dependence of the unit cell parameter of single crystals with a cubic spinel lattice on the solid solution composition is found. First, photosensitive Schottky barriers are fabricated, and then, based on studies of their photosensitivity, the character of band-to-band transition is discussed and the values of the band gap depending on the atomic composition are estimated. The possibility of using the obtained solid solutions as broadband photoconverters of optical radiation is revealed.

A technology of growing single crystals of (In2S3)x(MnIn2S4)1 − x solid solutions that provides control over their atomic composition in the entire concentration range 0 ≤ x ≤ 1 is developed. It is shown that, in the range x = 0–1, the single crystals have the cubic spinel structure and the unit cell parameter a follows the linear dependence on x. The exponential character of the temperature dependence of resistivity of solid solutions, on which the first photosensitive Cu/(In2S3)x(MnIn2S4)1 − x structures are obtained, is revealed. The first photosensitivity spectra of these structures are obtained, and, based on these spectra, dependences of energy of the direct and indirect band-to-band transitions on the composition x are determined. The possibility of applying these structures in broad-band photoconverters of optical radiation is concluded.

Uniform single crystals of a ternary compound MnIn2S4 have been grown by the method of directional crystallization of an almost stoichiometric melt. The problem of the creation of photosensitive structures has been solved and the first studies of the spectra of photosensitivity have been performed, which made it possible to draw a conclusion on the nature of interband optical transitions in this semiconductor and to estimate the width of the energy gap for the direct and indirect transitions. The possibility of the application of the new structures in wideband photoconverters of optical radiation is noted.

Bulk single crystals of FeIn2S4 have been grown for the first time by the method of directional crystallization of an almost stoichiometric melt. The first photosensitive structures of the In(Al)/FeIn2S4 have been fabricated. Using the crystals grown, the first spectra of photosensitivity of the new structures have been obtained at T = 300 K. Based on an analysis of the photosensitivity spectra, it has been established that the edge absorption of FeIn2S4 is formed by indirect and direct interband transitions, and the values of the energy gap corresponding to these transitions have been estimated. A conclusion was made on the possibility of applying the structures obtained in wideband photoconverters.

In2Se3 single crystals ∼40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity (σ) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In2Se3 were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In2Se3 structures, the nature of the interband transitions and band gap of In2Se3 crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

The method of gas-phase resublimation is used to grow the single-crystals of monoclinic and tetragonal modifications whose composition are identical and corresponds to the ZnP2 stoichiometry. The crystal-lattice parameters are determined and natural facets of the crystals of both modifications are identified. The obtained single crystals were used to fabricate for the first time the Schottky barriers and welded point structures; the latter exhibited rectification and the photovoltaic effect. On the basis of the first studies of photosensitivity of obtained structures subjected to the natural and linearly polarized radiation, the character of interband transitions is suggested, the values of the band gap are determined, and the influence of the position ordering of atoms on the structures’ properties is observed. The phenomenon of natural photopleochroism observed in the structures based on oriented ZnP2 single crystals were studied. It is concluded that it is possible to use the zinc diphosphide in photoconversion of the intensity and polarization of optical radiation.

Single crystals of CuIn7Se11 ternary compound have been grown by directional crystallization of the melt at first time. The composition of the obtained single crystals was determined by electron probe X-ray microanalysis, X-ray method was used to determine their structure. It was established that the grown crystals are crystallized in hexagonal structure. H2O/CuIn7Se11 photoelectrochemical cells have been created on the given crystals at first time. The photosensitivity spectra from which the character of interband transitions and band gap values have been determined have been investigated. The created photoelectrochemical cells can be utilized as wide-band photoconvertors of an optical radiation. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The technology of heat treatment of initial Cu-In-Ga layers in an inert N2 atmosphere in the presence of Se and S vapors was used in self-organized growth of homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on the basis of these structures, thin-film glass/Mo/p-Cu(In,Ga)(S,Se)2/(In2S3, CdS)/n-ZnO/Ni-Al heterostructures were created. The mechanism of charge transport and the processes of photosensitivity in the obtained structures subjected to irradiation with natural and linearly polarized light are discussed. The broadband photosensitivity of thin-film heterostructures and induced photopleochroism were detected. These findings indicate that there is an interference antireflection of the structures obtained. It is established that higher solar-cell efficiency in these heterostructures occurs if In2S3 thin films are used as heterobarriers. This technology can be used in the creation ecologically safe Cd-free next generation thin-film solar cells. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Photosensitive single dot structures based on CuIn2n+1Se3n+2 (n = 0, 1, 2) bulk single crystals have been creation for the first time by means of electric-discharge welding (EDW). The stationary current-voltage characteristics and the photovoltaic properties of the structures based on CuInSe2, CuIn3Se5 and CuIn5Se8 ternary semiconductors have been studied, which show evidence for the rectification effect and photoconversion. The character of interband transitions is established and the energy bandgap variation in this type of ternary compounds is traced. It is concluded that EDW can be successfully used for the creation of photoconverters based on multi-component semiconductors. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A model of generalized generation-recombination theory is proposed for semiconductors with nanoscale disorder. Application of the developed recombination model made it possible to determine the parameters characterizing localization of electronic states in semiconductors with different atomic compositions and positional ordering. It is shown that the spatial parameters of this localization are in the nanoscale range. For this reason, the main transport factor is the tunneling of the charge carrier; the electronic transitions between the allowed bands and states in the mobility gap also play an important role. On the basis of the study performed, it is concluded that only consideration of both factors yields adequate description of the electronic processes in the structures based on semiconductors with nanoscale disorder.

The single crystals of tetragonal modification t-In2S3 are grown by the planar crystallization of the melt. On their basis, the photosensitive H2O/t-In2S3 cells are fabricated, and the spectra of their quantum efficiency are investigated. The broadband photosensivity of H2O/t-In2S3 cells is determined. On the basis of the photosensivity spectra, the character of interband transitions and the t-In2S3 band gaps corresponding to them are determined. The possibility of using the t-In2S3 crystals in broadband photoconverters of natural and polarized radiations is shown. The relation between the energy spectrum and the phase state of In2S3 crystals is revealed.

Single crystals of ZnP 2 with a developed natural faceting characteristic of tetragonal symmetry were grown for the first time using a resublimation method. The atomic composition and crystal cell constants of t-ZnP 2 tetragonal crystals were determined. Structures that feature the straightening and photovoltaic effect covered the natural faces of the crystals. Studies of the photosensitivity of the obtained structures in natural and linearly polarized radiation made it possible to elucidate the character of interband transitions and to estimate the forbidden-band gap for the t-ZnP 2 crystals. Natural photopleochroism has been found and studied in structures based on single crystals with the natural faceting. It is concluded that ZnP 2 can be used as a highly efficient converter of solar radiation.

Single crystals of ternary CuIn2n + 1Se3n + 2 semiconductors with the composition index n = 3, 5, 6 were grown for the first time using the direct crystallization method. It was shown that these crystals have hexagonal symmetry and close unit cell parameters. Photoelectrochemical cells based on CuIn2n + 1Se3n + 2 and In2Se3 single crystals were fabricated. Their photosensitivity spectra were measured for the first time, which were used to determine the nature of interband transitions and the band gap. The weak dependence of the parameters of the band’s spectrum and unit cell of these semiconductors at n ≥ 2 was attributed to the features of the interatomic interaction in such phases. It was concluded that new CuIn2n + 1Se3n + 2 semiconductors can be used in broadband photoconverters of optical radiations.

The method of chemical deposition is used to form the structures with the Ni-n-GaAs Schottky barrier. The thickness of the Ni layers with a specular outer surface was varied within the range of 150–220 A. It was experimentally observed for the first time that photosensitivity of the obtained barriers with the semitransparent Ni layers illuminated is practically absent in the Fowler region of the spectrum at hv = 0.9−1.5 eV. This circumstance is related mainly to the fact that, in this case, the Ni layer side of the structure was illuminated, and radiation with the photon energy hv < 1.3 eV was effectively reflected from the nickel surface. It is established that the developed Ni-n-GaAs structures can be used as high-efficiency wide-band photoconverters of both visible and ultraviolet radiation.

Two new types of photosensitive structures are proposed and fabricated for the first time on solid-solution single crystals of diamondlike Cd1 − xMnxTe (x = 0−0.7) magnetic semiconductors. The photoelectric properties of surface-barrier (In/Cd1 − xMnxTe) and welded (weld/Cd1 − xMnxTe) structures are studied at T=300 K. The photosensitivity spectra of these structures are analyzed and compared; as a result, the character of the interband optical transitions and the energy gaps of the Cd1 − xMnx Te crystals are determined. These structures can be applied in magnetic photoelectronic devices.

We used directional solidification of the melt to grow single crystals of the binary compound In2Se3 and then determined the composition of the crystals obtained and their structure. From Hall effect measurements, we determined the type of conductivity, the concentration, and the Hall mobility of the free electrons in the single crystals obtained, on which we developed photosensitive Al/In2Se3 Schottky barriers for the first time and determined their photoelectric properties. We established that the indicated barriers can be used to design broadband optical photoconverters based on In2Se3 single crystals.

The photosensitivity spectra of Au-n-GaAs Schottky barriers obtained by the chemical method are studied in the spectral range 0.9–2.2 eV. The barrier height is determined for the structures exposed on the side of the semitransparent Au layer and on the opposite side of GaAs at T = 300 K. It is found that, as the structures are illuminated on the side of GaAs, their photosensitivity in the Fowler spectral region, hν = 0.95–1.25 eV, is approximately one order of magnitude higher than when the barrier contact is illuminated. This circumstance may find use in studying the fundamental properties of the metal-semiconductor and metal-insulator-semiconductor interfaces, as well as in elaboration of new semiconductor devices.

We propose a new technology for the formation of an energy barrier on crystals of Cd1 − x Mn x Te solid solutions. Rectifying photosensitive heterostructures of the intrinsic oxide-Cd1 − x Mn x Te (x = 0.6−1) type have been obtained for the first time by means of thermal oxidation. Stationary current-voltage characteristics and relative quantum efficiency spectra of these heterostructures have been measured. The energy spectrum and the character of interband transitions in Cd1 − x Mn x Te are discussed. It is shown that the thermal oxidation process can be used for the fabrication of heterophotoconverters based on single crystals of dilute magnetic semiconductors of the Cd1 − x Mn x Te system.

The method of heat treatment of metallic Cu-In-Ga layers in the N2 inert atmosphere in the presence of selenium and sulfur vapors was used to grow homogeneous films of Cu(In,Ga)(S,Se)2 alloys onto which the CdS or In2S3 films were deposited and, on the basis of these structures, the thin-film glass/Mo/p-Cu(In,Ga) (S,Se)2/n-(In2S3,CdS)/n-ZnO/Ni-Al photoelements were fabricated. The mechanisms of charge transport and the processes of photosensitivity in the obtained structures subjected to irradiation with natural and linearly polarized light are discussed. The broadband photosensitivity of thin-film heterophotoelements and the induced photopleochroism were detected; these findings indicate that there is an interference-related blooming of the structures obtained. It is concluded that it is possible to use ecologically safe cadmium-free thin-film heterostructures as high-efficiency photoconverters of solar radiation.

We have grown homogeneous CuIn5Se8 crystals with n-type conductivity and determined the activation energy for the donor centers. We created In/n-CuIn5Se8 Schottky barriers and obtained the first spectral dependences of the photoconversion quantum efficiency of these structures. From the results of analysis of the photoactive absorption edge of the Schottky barriers, we have interpreted the nature of the interband optical transitions and determined the bandgap for direct and indirect transitions in CuIn5Se8 crystals. We have established that it is feasible to use CuIn5Se8 in broadband optical photoconverters.

Photosensitive point structures based on CuIn2m + 1Se3m + 2 (m = 0, 1, 2) single crystals have been obtained for the first time by means of electric-discharge welding (EDW). The stationary current-voltage characteristics and the photovoltaic properties of the structures based on CuInSe2, CuIn3Se5, and CuIn5Se8 ternary semiconductors have been studied, which show evidence for the rectification effect and photoconversion. The character of interband transitions is established and the bandgap width variation in this series of compounds is traced. It is concluded that EDW can be successfully used for the fabrication of photoconverters based on multicomponent semiconductors.

Single crystals of the n-CuIn5Se8 compound of hexagonal modification have been grown by direct crystallization from melt. On the basis of the experimental study of its thermal interaction with air oxygen, a method for fabricating new oxide/n-CuIn5Se8 heterojunctions is proposed. Electrical and photoelectric properties of the structures obtained have been investigated. It is shown that the interaction of n-CuIn5Se8 of hexagonal modification with air oxygen makes it possible to obtain heterojunctions with high photosensitivity. The new technology can be used in the design of broadband optical radiation converters based on n-CuIn5Se8 crystals.

The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480–720 K is used to grow homogeneous thin (0.6–1.5 μm) n-In2S3 films on which the In/n-In2S3 Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency η(ħω) for the barriers obtained were studied. An analysis of the spectral dependences η(ħω) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In2S3 films. It is concluded that the thin In2S3 films can be used in broadband photoconverters of optical radiation.

Structures are formed on the p-CuIn3Se5 crystals and photoelectric phenomena in the Cu/p-CuIn3Se5, Al/p-CuIn3Se5, and In/p-CuIn3Se5 Schottky barriers are studied. The spectra of quantum efficiency for photoconversion in new structures were obtained for the first time. The characteristics of the interband transitions are discussed, and the CuIn3Se5 band gap is determined. It is concluded that CuIn3Se5 crystals can be used in the fabrication of high-efficiency broadband photoconverters of optical radiation.

Rectifying photosensitive n-Ox/n-InSe heterojunctions, where n-Ox is native oxide of InSe, are obtained by the thermal treatment of the n-InSe crystals in air. The spectra of the relative quantum efficiency of the originally obtained heterojunctions are investigated in natural and linearly polarized radiation. It is shown that the heterojunctions obtained manifest broad-band photosensitivity, and photopleochroism emerges under oblique incidence of the linearly polarized radiation. The nature of the photopleochroism revealed is discussed. It is concluded that the isotype Ox/InSe structures can be used as photoconverters of natural and linearly polarized radiation.

We have created photosensitive heterostructures n-Ox/p-CuIn3Se5 for the first time. The synthesis process is based on thermal reaction of the ternary compound with atmospheric oxygen. We have studied the voltage-current characteristics and the photoconversion quantum efficiency spectra of the indicated structures. We discuss charge transport mechanisms and photosensitivity of the created structures. We show that n-Ox/p-CuIn3Se5 heterostructures can be used in designing solar cells and photoanalyzers for linearly polarized radiation.

Single crystals of the ternary CuGa3Te5 and CuGa5Te8 ternary compounds are grown and their properties are studied. The photosensitive In/p-CuGa3Te5 and In/p-CuGa5Te8 structures were formed on homogeneous crystals for the first time. Photoelectric properties of new structures were studied and the parameters of the structures and of new semiconductors were determined; it is concluded that these structures can be used in broadband photoconverters of nonpolarized radiation.

We have grown homogeneous CuIn5Se8 crystals with n-type conductivity and determined the activation energy for the donor centers. We created In/n-CuIn5Se8 Schottky barriers and obtained the first spectral dependences of the photoconversion quantum efficiency of these structures. From the results of analysis of the photoactive absorption edge of the Schottky barriers, we have interpreted the nature of the interband optical transitions and determined the bandgap for direct and indirect transitions in CuIn5Se8 crystals. We have established that it is feasible to use CuIn5Se8 in broadband optical photoconverters.

CuGa3Te5 single crystals were grown by the Bridgman method, and their composition, melting point, lattice parameters, and band gap were determined. The crystals were used to fabricate the first photosensitive In/p-CuGa3Te5 surface-barrier structures, which were characterized by photoelectric measurements. The results suggest that such structures are potentially attractive as broadband visible-light detectors.

The transmission spectra of CuGa5Te8 single crystals grown by the Bridgman method at temperatures of 10–300 K have been measured in the region of their intrinsic absorption edge. The energy-gap width of CuGa5Te8 single crystals has been determined, and its temperature dependence has been constructed. Photosensitive, surface-barrier In/p-CuGa5Te8 structures were formed for the first time on the basis of the indicated single crystals, and their photoelectric properties were investigated. It is shown that these structures can be used as broad-range photodetectors of natural radiation.

n-ZnO:Al/CuPc/n(p)-Si structures were formed using vacuum-evaporation deposition of copper phthalocyanine (CuPc) layers on the surface of n-and p-Si wafers with subsequent magnetron-sputtering deposition of ZnO:Al layers on the CuPc surface. It is shown that the structures obtained exhibit a high photosensitivity (∼80 V/W at T=300 K) in the spectral range 1.65–3.3 eV. The rectification factor and photovoltaic effect in these structures are discussed in relation to the properties of silicon substrates. It is concluded that the contact of phthalocyanine with diamond-like semiconductors (e.g., silicon) are promising for application in wide-band high-efficiency photovoltaic converters.