1. Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods
- Author
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Yuan-Ting Lin, Paritosh Vilas Wadekar, Hsiang-Shun Kao, Yu-Jung Zheng, Quark Yung-Sung Chen, Hui-Chun Huang, Cheng-Maw Cheng, New-Jin Ho, and Li-Wei Tu
- Subjects
A1. Characterization ,A1. Doping ,A3. Molecular beam epitaxy ,B1. Nanomaterials ,B1. Nitrides ,B2. Magnetic materials ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract In this report, ferromagnetic interactions in modulation-doped GaMnN nanorods grown on Si (111) substrate by plasma-assisted molecular beam epitaxy are investigated with the prospect of achieving a room temperature ferromagnetic semiconductor. Our results indicate the thickness of GaN layer in each GaN/MnN pair, as well as Mn-doping levels, are essential for suppressing secondary phases as well as enhancing the magnetic moment. For these optimized samples, structural analysis by high-resolution X-ray diffractometry and Raman spectroscopy verifies single-crystalline modulation-doped GaMnN nanorods with Ga sites substituted by Mn atoms. Energy dispersive X-ray spectrometry shows that the average Mn concentration can be raised from 0.4 to 1.8% by increasing Mn fluxes without formation of secondary phases resulted in a notable enhancement of the saturation magnetization as well as coercive force in these nanorods.
- Published
- 2017
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