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In this study, we developed an a-InGaZnO (a-IGZO) thin film transistor (TFT) structure that inserts a sputtered AlOx intermediate layer (IL) within the active layer. The IL not only effectively blocks hydrogen (H) diffusion from the gate insulation (GI) layer to the upper region of a-IGZO but also modifies the energy band structure of the bottom channel region and creates a locally low electron concentration that counteracts the excess electron donated by diffused H. Compared to conventional TFTs, the TFT with the IL exhibits impressive electrical characteristics, including a high saturation mobility (μsat) of 14.5 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 6.2 × 108, and a low subthreshold swing (SS) of 0.16 V/dec. Furthermore, this structure exhibits remarkable stability under negative bias stress and negative bias illumination stress, with ΔVth values of 1.1 and 1.5 V, respectively. The integration of the IL provides a promising approach for enhancing the performance of a-IGZO TFTs, paving the way for next-generation display technologies. [ABSTRACT FROM AUTHOR]

Amorphous high‐k zirconium aluminum oxide (ZAO) dielectrics are prepared without the post‐annealing process to achieve high performance and low cost of next‐generation flexible optoelectronic devices. In this study, the ZAO film without annealing was prepared by co‐treatment with ultraviolet and hydrogen peroxide solution (UV‐H2O2‐UV). The performance of the film was improved by H2O2 dissociating hydroxyl radicals and combining with oxygen vacancy in the treatment process. The results show that, compared with the sample annealed at 380℃, the oxygen vacancy in the film is reduced from 29.55% to 25.23% after UV‐H2O2‐UV treatment for 60 min. When the relative permittivity increases from 11.45 to 13.99, the leakage current density at 1 MV/cm decreases from 6.45×10‐7 to 2.86×10‐8 A/cm2, and the breakdown voltage increases by 108%. This work aims to provide widely applicable and repeatable methods to open the door to in‐depth research on alternative high‐temperature post‐annealing processes for high‐performance flexible electronic devices. [ABSTRACT FROM AUTHOR]

Abstract Photovoltaic performances of CsPbI2Br solar cells are still lower than those of hybrid inorganic–organic perovskite solar cells, and researchers are exploring ways to improve their efficiencies. Due to its higher thermal stability in comparison with the generally studied hybrid inorganic–organic perovskites, all-inorganic CsPbI2Br has recently attracted great attention. By utilizing the combination of MnCl2 and ZnCl2 particles doping to modulate film growth, it is found that MnCl2 and ZnCl2 particles infiltrate into the holes of the CsPbI2Br lattice through the growth procedure, leading to suppressed nucleation and reduced growth rate. The combination assists to achieve higher CsPbI2Br crystalline grains for increased J sc as high as 15.66 mA cm−2 and FF as large as 73.37%. It is indicated that a specific combination of ZnCl2-MnCl2 doping can fundamentally improve the film surface morphology, reduce trap density, and suppress the recombination of carriers. Consequently, power conversion efficiency (PCE) is significantly improved from 13.47 to 14.15% compared with the reference device without doping.

Inorganic tin–lead perovskites with low bandgap (1.2–1.4 eV) are desired absorber materials for solar cells owing to their ideal bandgap and compositional stability. However, such tin–lead perovskites are currently subject to inferior power conversion efficiency (PCE) and the origin remains unclear. Here, for the first time, we report the metal-cation-derived unsynchronized crystallization behavior of inorganic tin–lead perovskite, exemplifying by a representative composition CsPb0.7Sn0.3I3. A tin-perovskite-targeted crystallization modulation agent, 1-(4-fluorophenyl) piperazine (1-4FP), is introduced to synchronize the B-site alloying through its strong targeted bonding with SnI2, resulting in substantially enhanced film quality with better morphology and photoelectrical properties. Furthermore, first-principles molecular dynamics simulations reveal that the agent regulates the crystallization route toward the pure phase of CsPb0.7Sn0.3I3 by suppressing the preforming of tin perovskite. With our proposed approach, the best device attains PCE of 17.55%, which is record-high for inorganic tin–lead perovskite solar cells. In addition, treated devices show excellent stability with only 10% and negligible loss after being exposed to 1 sun intensity for 700 h and being stored in N2 after over 4000 h, respectively. Our findings open a new avenue of crystallization route design in inorganic tin–lead perovskites, so as to obtaining high-quality perovskite films and associated solar cells. [ABSTRACT FROM AUTHOR]