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Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2-3 × 1018 cm−3, the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >1019 cm−3, exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (∼80-260 cm2/V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ∼1000-2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

CdO has been shown to achieve a high electron concentration N (>1021cm-3) and at the same time a high mobility μ (>100cm2/Vs) when doped with conventional shallow dopants (In or Ga), and consequently making it a transparent conducting oxide with very low resistivity ρ100 to

We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga2S3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, which indicates non-stoichiometric transfer from the target to the film. Surprisingly, stoichiometric transfer occurs at substrate temperatures above 650 °C with monoclinic Ga2S3 as the preferred, higher S-content phase. Through a series of growth and annealing experiments, we show that GaS nucleation under S-deficient conditions leads to the preferred growth of this layered, hexagonal phase below 550 °C. Furthermore, GaS films annealed above 650 °C under high vacuum are transformed to Ga2S3, reflecting the greater stability of the monoclinic phase. By first growing Ga2S3 at a higher temperature and subsequently growing GaS at a lower temperature, we can fabricate GaS/Ga2S3 heterostructures in a single growth process.

Highly degenerate n-type CdO with high electron mobility is a promising transparent conducting oxide (TCO) for optoelectronic devices utilizing a spectrum in the Vis-NIR range. In particular, it has been shown that doped CdO thin films can show much superior transparency of >80% in the NIR region compared to conventional transparent conducting oxide (e.g., Sn-doped In2O3) thin films with a similar sheet resistance. However, CdO thin films typically experience rapid degradation in their electron mobilities when exposed to environmental conditions with H2O moisture. Here, we studied the effects of thermal annealing on the environmental stability of In-doped CdO (CdO:In) using a combination of different analytical techniques. CdO:In thin films with different In concentration (0%–8.3%) synthesized by magnetron sputtering were subjected to different post-thermal annealing (PTA) and then aged in different environmental conditions with varying relative humidity (RH) in the range of 0%–85%. Our results reveal that the degradation of CdO:In thin films can be primarily attributed to the oxygen vacancy-related defects at the grain boundaries, which can readily react with the OH− in the moisture. The moisture induced degradation can be mitigated by appropriate PTA at high temperatures (>400 °C) where grain boundary defects, primarily associated with Cd vacancies, can be passivated through hydrogen (H), thus enhancing their environmental stability. The present study provides a comprehensive understanding of the instability mechanisms and defect passivation in transparent conducting CdO:In thin films, which can also be relevant for other wide gap oxides. [ABSTRACT FROM AUTHOR]

CdO-based transparent conducting oxide thin films have great potential applications in many optoelectronic devices because of their high mobility, low resistivity, and high transparency over a wide spectral range. However, because of the low band gap of only 2.2 eV, the transparency of this material is limited in the UV spectral range. Alloying of undoped CdO with a larger band gap material such as MgO increases the band gap but tends to degrade electrical conductivity. Recently, it has been demonstrated that In doping of CdO greatly improves the electrical characteristic of this material by increasing both the carrier density and the mobility. In this work, we present a comprehensive study on CdMgO alloys doped with up to 4 % In. We show that the doping with In extends the composition range of conducting films with a composition of up to 40 % of Mg and a band gap of 3.5 eV. Our results could open up a new pathway to transparent conducive oxides that could be used as low-resistivity contacts and UV-transparent electron emitter windows in thin-film photovoltaic technologies.

Cadmium oxide (CdO) has recently attracted attention as a material with controllable properties tailored for optoelectronic and nanophotonic devices due to its superior mobility. However, its potential application in near-infrared (NIR) remains to be explored. In this work, we demonstrate that the epsilon-near-zero (ENZ) wavelength and nonlinear optical properties of CdO films can be effectively tuned by Mo doping. The results show that Mo doping increases the electron concentration as well as improve the crystalline quality of CdO. With increasing Mo doping, we achieve blueshifts of the ENZ wavelength from 2.89 to 1.56 μm. The nonlinear absorption (NLA) behavior at 1550 nm changes from reverse saturable absorption to saturable absorption with increasing Mo content. Moreover, significant improvement in NLA performance with nonlinear absorption coefficient β = −72 cm/GW is observed at the highest doping content. Our work shows that doped CdO films with tunable optoelectrical and nonlinear optical properties can be an ideal candidate for optoelectronic and nanophotonic application in the NIR region. [ABSTRACT FROM AUTHOR]

Artificial photosynthesis relies on the availability of semiconductors that are chemically stable and can efficiently capture solar energy. Although metal oxide semiconductors have been investigated for their promise to resist oxidative attack, materials in this class can suffer from chemical and photochemical instability. Here we present a methodology for evaluating corrosion mechanisms and apply it to bismuth vanadate, a state-of-the-art photoanode. Analysis of changing morphology and composition under solar water splitting conditions reveals chemical instabilities that are not predicted from thermodynamic considerations of stable solid oxide phases, as represented by the Pourbaix diagram for the system. Computational modelling indicates that photoexcited charge carriers accumulated at the surface destabilize the lattice, and that self-passivation by formation of a chemically stable surface phase is kinetically hindered. Although chemical stability of metal oxides cannot be assumed, insight into corrosion mechanisms aids development of protection strategies and discovery of semiconductors with improved stability.

Because of their well-defined light–matter interaction volume, high-quality single-crystalline nature, and precise bandgap tunability, all-inorganic cesium lead halide (CsPbX3 (X = Cl, Br, I)) perovskite (IHP) microplates are of fundamental and technological interest today. Here, we report the synthesis and properties of ternary CsPbX3 (X = Cl, Br, I) and quaternary CsPbX3 (X = Cl1−xBrx, Br1−xIx) alloy microplates grown by the single-step chemical vapor deposition (CVD) process. Smooth-faceted, single crystalline IHP alloy microplates with good vertical and lateral composition uniformity are achieved. These microplates exhibit strong photoluminescence and are thermally stable with no observable photodegradation. More importantly, two-photon absorption (TPA) is demonstrated in quaternary CsPb(Cl1−xBrx)3 and CsPb(Br1−xIx)3 IHP alloy microplates, which adds a new dimension to the functionalities of IHP microplates for nonlinear optical (NLO) applications. We believe that this work will open up multiple avenues for the development of microstructure compatible integrated optoelectronic and photonic applications and will certainly enhance the fundamental NLO research. [ABSTRACT FROM AUTHOR]

Bandgap energies in wurtzite (WZ) structured CdxZn1−xO alloys are known to decrease with increasing Cd content (x). Our previous work demonstrated that WZ-CdxZn1−xO alloys with a high Cd content of x ∼ 0.6 and a low gap of 2 eV can be stabilized by oxygen interstitials when grown in an O-rich environment. However, such O-rich WZ-CdxZn1−xO alloys have poor electrical properties due to compensating native defects. In this work, we synthesized pure WZ phase CdxZn1−xO thin films with different Cd contents by magnetron sputtering in an oxygen-rich environment. Changes in structural, electrical, and optical properties of these O-rich wurtzite CdxZn1−xO after rapid thermal annealing were investigated. While alloys with a low Cd composition of 0.2 can maintain a pure wurtzite structure up to 500 °C, phase separation occurs at a lower annealing temperature of ∼400 °C for Cd-rich (x = 0.6) films. Isochronal and isothermal annealing studies reveal the kinetics of native defects in these alloys. Highly mobile hydrogen interstitial donor defects, oxygen interstitials, and more stable cation vacancies outdiffuse sequentially as the annealing temperature increases from <300 to >400 °C. By exploiting the difference in the energy barrier between acceptor defects removal and phase separation, a pure wurtzite phase alloy with a low bandgap of 2 eV and decent electrical properties was realized by annealing O-rich WZ-Cd0.6Zn0.4O at 300 °C with an extended annealing duration of >100 s. These results demonstrate a practical way to obtain low-gap oxide semiconductors with strong optical absorption and controllable electrical conductivities. [ABSTRACT FROM AUTHOR]

We have deposited CdTe films by laser-assisted epitaxy approach and investigated the influence of substrate and film thickness on the film properties. Grown on Si(001), GaAs(001), and quartz substrates; the CdTe films exhibit preferential orientation along the cubic CdTe(111) direction. When the films are thin (

Mid‐infrared (MIR) pulsed lasers operating at 2–5 µm have important applications in communication, sensing, and medicine. However, the lack of robust MIR saturable absorbers (SAs) remains a major obstacle. Here, a semiconductor material cadmium oxide (CdO) film with high laser‐induced damage threshold (800 nm, 134 mJ cm−2) and broadband saturable absorption (2.0–3.9 µm) is investigated. The effective tuning of the nonlinear optical response of CdO is demonstrated by adjusting the carrier concentration via a tungsten (W)‐doping scheme. The saturable absorption is improved and carrier relaxation process is accelerated after increasing the W‐dopant level. Based on these findings, the robust CdO‐SAs with customizable parameters are realized and Q‐switched lasers with decreasing pulse width from 372 to 254.3 ns are obtained at 2 µm. The design flexibility provided by CdO opens up a large parameter space that enables the continuous improvement of compact and high‐performance MIR ultrafast lasers. [ABSTRACT FROM AUTHOR]