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The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF$_2$ and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF$_2$, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF$_2$, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO$_2$(001)/FeF$_2$/IrO$_2$ and CrO$_2$(110)/FeF$_2$/IrO$_2$ as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216\% and 3956\%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM insulators and semiconductors, and broadens applications of the AFM spintronics., Comment: 6 pages, 4 figures

Significance: Cerebral blood flow (CBF) imaging is crucial for diagnosing cerebrovascular diseases. However, existing large neuroimaging techniques with high cost, low sampling rate, and poor mobility make them unsuitable for continuous and longitudinal CBF monitoring at the bedside. Aim: This study aimed to develop a low-cost, portable, programmable scanning diffuse speckle contrast imaging (PS-DSCI) technology for fast, high-density, and depth-sensitive imaging of CBF in rodents. Approach: The PS-DSCI employed a programmable digital micromirror device (DMD) for remote line-shape laser (785 nm) scanning on tissue surface and synchronized a 2D camera for capturing boundary diffuse laser speckle contrasts. New algorithms were developed to address deformations of line-shape scanning, thus minimizing CBF reconstruction artifacts. The PS-DSCI was examined in head-simulating phantoms and adult mice. Results: The PS-DSCI enables resolving Intralipid particle flow contrasts at different tissue depths. In vivo experiments in adult mice demonstrated the capability of PS-DSCI to image global/regional CBF variations induced by 8% CO2 inhalation and transient carotid artery ligations. Conclusions: Compared to conventional point scanning, the line scanning in PS-DSCI significantly increases spatiotemporal resolution. The high sampling rate of PS-DSCI is crucial for capturing rapid CBF changes while high spatial resolution is important for visualizing brain vasculature., Comment: 23 Pages, 8 Figures, 4 Tables

Spin currents of perpendicularly polarized spins (z spins) by an in-plane charge current have received blooming interest for the potential in energy-efficient spin-orbit torque switching of perpendicular magnetization in the absence of a magnetic field. However, generation of z spins is limited mainly to magnetically or crystallographically low-symmetry single crystals (such as non-colinear antiferromagnets) that are hardly compatible with the integration to semiconductor circuits. Here, we report efficient generation of z spins in sputter-deposited polycrystalline heavy metal devices via a new mechanism of broken electric symmetries in both the transverse and perpendicular directions. Both the dampinglike and fieldlike spin-orbit torques of z spins can be tuned significantly by varying the degree of the electric asymmetries via the length, width, and thickness of devices as well as by varying the type of the heavy metals. We also show that the presence of z spins enables deterministic, nearly-full, external-magnetic-field-free switching of a uniform perpendicularly magnetized FeCoB layer, the core structure of magnetic tunnel junctions, with high coercivity at a low current density. These results establish the first universal, energy-efficient, integration-friendly approach to generate z-spin current by electric asymmetry design for dense and low-power spin-torque memory and computing technologies and will stimulate investigation of z-spin currents in various polycrystalline materials.

The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices., Comment: 15 pages, 4 figures, accepted by Advanced Materials

Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory., Comment: 20 pages, 4 figures

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the N\'eel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the N\'eel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design.

Magnetic skyrmions, the topological states possessing chiral magnetic structure with non-trivial topology, have been widely investigated as a promising candidate for spintronic devices. They can also couple with superconducting vortices to form skyrmion-vortex pairs, hosting Majorana zero mode which is a potential candidate for topological quantum computering. A lot of theoretical proposals have been put forward on constructing skyrmion-vortex pairs in heterostructures of chiral magnet and superconductor. Nevertheless, how to generate skyrmion-vortex pairs in a controllable way experimentally remains a significant challenge. We have designed a heterostructure of chiral magnet and superconductor [CoFeB/Ir/Ta]7/Nb in which zero field N\'eel-type skyrmions can be stabilized and the superconducting vortices can couple with the skyrmions when Nb is in the superconducting state. We have directly observed the formation of skyrmion-superconducting vortex pairs which is dependent on the direction of the applied magnetic field. Our results provide an effective method to manipulate the quantum states of skyrmions with the help of superconducting vortices, which can be used to explore the possible existence of Majorana zero mode for future quantum computation., Comment: 17 pages, 3 figures

Computed tomography (CT) serves as an effective tool for lung cancer screening, diagnosis, treatment, and prognosis, providing a rich source of features to quantify temporal and spatial tumor changes. Nonetheless, the diversity of CT scanners and customized acquisition protocols can introduce significant inconsistencies in texture features, even when assessing the same patient. This variability poses a fundamental challenge for subsequent research that relies on consistent image features. Existing CT image standardization models predominantly utilize GAN-based supervised or semi-supervised learning, but their performance remains limited. We present DiffusionCT, an innovative score-based DDPM model that operates in the latent space to transform disparate non-standard distributions into a standardized form. The architecture comprises a U-Net-based encoder-decoder, augmented by a DDPM model integrated at the bottleneck position. First, the encoder-decoder is trained independently, without embedding DDPM, to capture the latent representation of the input data. Second, the latent DDPM model is trained while keeping the encoder-decoder parameters fixed. Finally, the decoder uses the transformed latent representation to generate a standardized CT image, providing a more consistent basis for downstream analysis. Empirical tests on patient CT images indicate notable improvements in image standardization using DiffusionCT. Additionally, the model significantly reduces image noise in SPAD images, further validating the effectiveness of DiffusionCT for advanced imaging tasks.

To address many of the deficiencies in optical neuroimaging technologies such as poor spatial resolution, time-consuming reconstruction, low penetration depth, and contact-based measurement, a novel, noncontact, time-resolved laser speckle contrast imaging (TR-LSCI) technique has been developed for continuous, fast, and high-resolution 2D mapping of cerebral blood flow (CBF) at different depths of the head. TR-LSCI illuminates the head with picosecond-pulsed, coherent, widefield near-infrared light and synchronizes a newly developed, high-resolution, gated single-photon avalanche diode camera (SwissSPAD2) to capture CBF maps at different depths. By selectively collecting diffuse photons with longer pathlengths through the head, TR-LSCI reduces partial volume artifacts from the overlying tissues, thus improving the accuracy of CBF measurement in the deep brain. CBF map reconstruction was dramatically expedited by incorporating highly parallelized computation. The performance of TR-LSCI was evaluated using head-simulating phantoms with known properties and in-vivo rodents with varied hemodynamic challenges to the brain. Results from these pilot studies demonstrated that TR-LSCI enabled mapping CBF variations at different depths with a sampling rate of up to 1 Hz and spatial resolutions ranging from tens of micrometers on the head surface to 1-2 millimeters in the deep brain. With additional improvements and validation in larger populations against established methods, we anticipate offering a noncontact, fast, high-resolution, portable, and affordable brain imager for fundamental neuroscience research in animals and for translational studies in humans., Comment: 22 pages, 7 figures, 4 tables

Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific directions relevant to their altermagnetism. Here, we design an Altermagnet/Insulator barrier/Ferromagnet junction, renamed as altermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as a prototype. Through first-principles calculations, we investigate the tunneling properties of the ATMTJ along the [001] and [110] directions, which shows that the tunneling magnetoresistance (TMR) is almost zero when the current flows along the [001] direction, while it can reach as high as 6100\% with current flows along the [110] direction. The spin-resolved conduction channels of the altermagnetic RuO$_2$ electrode are found responsible for this momentum-dependent (or transport-direction-dependent) TMR effect. Furthermore, this ATMTJ can also be used to readout the N\'{e}el vector of the altermagnetic electrode RuO$_2$. Our work promotes the understanding toward the altermagnetic materials and provides an alternative way to design magnetic tunnel junctions with ultrahigh TMR ratios and robustness of the altermagnetic electrode against external disturbance, which broadens the application avenue for antiferromagnetic spintronic devices.

The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted to charge current in the Ti and Mn layers via the inverse orbital Hall effect. Furthermore, the inserted W layer provides an additional conversion of the orbital-charge current in the Ti and Mn layers, significantly enhancing the orbitronic terahertz emission. Moreover, the orbitronic terahertz emission can be manipulated by cooperating with the inverse orbital Hall effect and the inverse spin Hall effect in the different sample configurations. Our results not only discover the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters., Comment: 15 pages, 4 figures, accepted for publication in npj Quantum Materials

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the N\'eel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices., Comment: 27 pages, 9 figures

We report the experimental observation of the spin-wave moir\'e edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moir\'e lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moir\'e edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist angle, the magnetic field acts as an additional degree of freedom for tuning the chiral behavior of the magnon edge modes. Micromagnetic simulations indicate that the edge modes emerge within the original magnonic band gap and at the intersection between a mini-flatband and a propagation magnon branch. Our theoretical estimate for the Berry curvature of the magnon-magnon coupling suggests a non-trivial topology for the chiral edge modes and confirms the key role played by the dipolar interaction. Our findings shed light on the topological nature of the magnon edge mode for emergent moir\'e magnonics.

Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage., Comment: 12 pages, 4 figures

Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations., Comment: 17 pages, 4 figures

Energy-efficient hardware implementation of machine learning algorithms for quantum computation requires nonvolatile and electrically-programmable devices, memristors, working at cryogenic temperatures that enable in-memory computing. Magnetic topological insulators are promising candidates due to their tunable magnetic order by electrical currents with high energy efficiency. Here, we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a chiral edge state-based cryogenic in-memory computing scheme. On the one hand, the chiral edge state can be tuned from left-handed to right-handed chirality through spin-momentum locked topological surface current injection. On the other hand, the chiral edge state exhibits giant and bipolar anomalous Hall resistance, which facilitates the electrical readout. The memristive switching and reading of the chiral edge state exhibit high energy efficiency, high stability, and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks based on magnetic topological memristors demonstrate a software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing memristor technologies. Our results may inspire further topological quantum physics-based novel computing schemes., Comment: 33 pages, 12 figures

Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linearity error < 4.19%) and symmetrical long-term potentiation/depression process, resulting in better performance compared to other memristor synapses. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61%. Furthermore, the trainable activation function of SOT-N enables the integrated SOT-ANN to execute the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.

To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs., Comment: 20 pages, 4 figures

Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.

The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications., Comment: 20 pages, 5 figures

By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven N\'eel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven N\'eel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.

Exploration of exotic transport behavior for quantum materials is of great interest and importance for revealing exotic orders to bring new physics. In this Letter, we report the observation of exotic prominent planar Hall effect (PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metal KV$_3$Sb$_5$. The PHE and PAMR, which are driven by an in-plane magnetic field and display sharp difference from other Hall effects driven by an out-of-plane magnetic field or magnetization, exhibit exotic higher-order oscillations in sharp contrast to those following empirical rule only allowing twofold symmetrical oscillations. These higher-order oscillations exhibit strong field and temperature dependence and vanish around charge density wave (CDW) transition. The unique transport properties suggest a significant interplay of the lattice, magnetic and electronic structure in KV$_3$Sb$_5$. This interplay can couple the hidden anisotropy and transport electrons leading to the novel PHE and PAMR in contrast to other materials.

A chiral bobber is a localized three-dimensional magnetization configuration, terminated by a singularity. Chiral bobbers coexist with magnetic skyrmions in chiral magnets, lending themselves to new types of skyrmion-complementary bits of information. However, the on-demand creation of bobbers, as well as their direct observation remained elusive. Here, we introduce a new mechanism for creating a stable chiral bobber lattice state via the proximity of two skyrmion species with comparable size. This effect is experimentally demonstrated in a Cu$_2$OSeO$_3$/[Ta/CoFeB/MgO]$_4$ heterostructure in which an exotic bobber lattice state emerges in the phase diagram of Cu$_2$OSeO$_3$. To unambiguously reveal the existence of the chiral bobber lattice state, we have developed a novel characterization technique, magnetic truncation rod analysis, which is based on resonant elastic x-ray scattering.