1. Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors.
- Author
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He Z, Yang H, and Young Kim N
- Abstract
Molybdenum disulfide (MoS
2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n -doped MoS2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p -type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS2 SBFETs can further operate in four distinct configurations: p - p , n - n , p - n , and n - p . Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices., (Creative Commons Attribution license.)- Published
- 2024
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