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1. Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells

Author

Jeong, Jaeki, Kim, Minjin, Seo, Jongdeuk, Lu, Haizhou, Ahlawat, Paramvir, Mishra, Aditya, Yang, Yingguo, Hope, Michael A., Eickemeyer, Felix T., Kim, Maengsuk, Yoon, Yung Jin, Choi, In Woo, Darwich, Barbara Primera, Choi, Seung Ju, Jo, Yimhyun, Lee, Jun Hee, Walker, Bright, Zakeeruddin, Shaik M., Emsley, Lyndon, Rothlisberger, Ursula, Hagfeldt, Anders, Kim, Dong Suk, Grätzel, Michael, and Kim, Jin Young

Published
2021
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2. Improving the Charge Transport of Perovskite Nanocrystal Light-Emitting-Diodes Through Benzylammonium Ligand Exchange

Author

Kim, Gi-Hwan, primary, Gong, Minsik, additional, Lee, Dong Gyu, additional, Shin, Gwang Yong, additional, Shin, Yun Seop, additional, Yun, Donghwan, additional, Jeong, Yunhye, additional, Park, Sang Wook, additional, Park, Chan Beom, additional, Yoon, Yung Jin, additional, Kim, Jin Young, additional, and Lee, Tae Kyung, additional

Published
2024
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7. Formate as Anti‐Oxidation Additives for Pb‐Free FASnI 3 Perovskite Solar Cells

Author

Jang, Hyungsu, primary, Lim, Hyeong Yong, additional, Yoon, Yung Jin, additional, Seo, Jongdeuk, additional, Park, Chan Beom, additional, Son, Jung Geon, additional, Kim, Jae Won, additional, Shin, Yun Seop, additional, An, Na Gyeong, additional, Choi, Seung Ju, additional, Kim, Su Hwan, additional, Jeong, Jaeki, additional, Jo, Yimhyun, additional, Kwak, Sang Kyu, additional, Kim, Dong Suk, additional, and Kim, Jin Young, additional

Published
2022
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8. A Multifunctional Self‐Assembled Monolayer for Highly Luminescent Pure‐Blue Quasi‐2D Perovskite Light‐Emitting Diodes (Advanced Optical Materials 20/2022)

Author

Shin, Yun Seop, primary, Ameen, Shahid, additional, Oleiki, Elham, additional, Yeop, Jiwoo, additional, Lee, Youngwan, additional, Javaid, Saqib, additional, Park, Chan Beom, additional, Song, Taehee, additional, Yuk, Dohun, additional, Jang, Hyungsu, additional, Yoon, Yung Jin, additional, Lee, Woojin, additional, Lee, Geunsik, additional, Kim, BongSoo, additional, and Kim, Jin Young, additional

Published
2022
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9. Manipulated Interface for Enhanced Energy Cascade in Quasi-2D Blue Perovskite Light-Emitting Diodes

Author

Shin, Yun Seop, primary, Park, Chan Beom, additional, Adhikari, Aniruddha, additional, Yoon, Yung Jin, additional, Cho, Hye Won, additional, Son, Jung Geon, additional, Seo, Jongdeuk, additional, Song, Taehee, additional, Lee, Woojin, additional, Yeop, Jiwoo, additional, Kim, Jae Won, additional, Gong, Minsik, additional, Walker, Bright, additional, Kwon, Oh-Hoon, additional, Kim, Gi-Hwan, additional, and Kim, Jin Young, additional

Published
2022
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13. Formate as Anti‐Oxidation Additives for Pb‐Free FASnI3 Perovskite Solar Cells.

Author

Jang, Hyungsu, Lim, Hyeong Yong, Yoon, Yung Jin, Seo, Jongdeuk, Park, Chan Beom, Son, Jung Geon, Kim, Jae Won, Shin, Yun Seop, An, Na Gyeong, Choi, Seung Ju, Kim, Su Hwan, Jeong, Jaeki, Jo, Yimhyun, Kwak, Sang Kyu, Kim, Dong Suk, and Kim, Jin Young

Subjects
SOLAR cells, PEROVSKITE, OPEN-circuit voltage, CHEMICAL stability, DENSITY functional theory, OXIDATIVE addition, CARRIER density
Abstract

Pb‐free Sn‐based perovskite solar cells (PSCs) have significant potential for application in photovoltaic devices because of their suitable bandgap, low exciton binding energy, high carrier mobility, and long diffusion length. However, their performance is hampered by several issues. Sn‐based perovskites are highly susceptible to oxidation, which induces a high concentration of defects and degrades the chemical stability of the perovskite crystals. Herein, the anion formate (HCOO−) can effectively suppress the oxidation of Sn in the pure formamidinium tin triiodide (FASnI3) perovskite without using A‐site cationic additives. Moreover, the presence of formate results in a uniform pinhole‐free perovskite film with a low trap density, reduced charge carrier recombination, and improved charge extraction. Density functional theory calculations show that formate‐treated FASnI3 has improved stability against oxidative Sn degradation. The formate‐treated PSC achieves a power conversion efficiency of 12.11% at a high open‐circuit voltage of 0.71 V. The device exhibits improved stability in ambient air in which it maintained over 80% of its initial power conversion efficiency after 180 min because oxidation is inhibited owing to the strong interaction between Sn and formate. [ABSTRACT FROM AUTHOR]

Published
2022
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16. Importance of interface engineering between the hole transport layer and the indium-tin-oxide electrode for highly efficient polymer solar cells

Author

Park, Sujung, primary, Adhi Wibowo, Febrian Tri, additional, Krishna, Narra Vamsi, additional, Ryu, Jiho, additional, Lee, Heunjeong, additional, Lee, Jin Hee, additional, Yoon, Yung Jin, additional, Kim, Jin Young, additional, Seo, Jung Hwa, additional, Oh, Seung-Hwan, additional, Jang, Sung-Yeon, additional, and Cho, Shinuk, additional

Published
2021
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17. Defect-Induced in Situ Atomic Doping in Transition Metal Dichalcogenides via Liquid-Phase Synthesis toward Efficient Electrochemical Activity

Author

Lee, Junghyun, primary, Heo, Jungwoo, additional, Lim, Hyeong Yong, additional, Seo, Jihyung, additional, Kim, Youngwoo, additional, Kim, Jihyun, additional, Kim, Ungsoo, additional, Choi, Yunseong, additional, Kim, Su Hwan, additional, Yoon, Yung Jin, additional, Shin, Tae Joo, additional, Kang, Joohoon, additional, Kwak, Sang Kyu, additional, Kim, Jin Young, additional, and Park, Hyesung, additional

Published
2020
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25. Morphology-Dependent Hole Transfer under Negligible HOMO Difference in Non-Fullerene Acceptor-Based Ternary Polymer Solar Cells

Author

Kim, Taehyo, primary, Heo, Jungwoo, additional, Lee, Ji Young, additional, Yoon, Yung Jin, additional, Lee, Tack Ho, additional, Shin, Yun Seop, additional, Kim, In-Sik, additional, Kim, Hyojung, additional, Jeong, Mun Seok, additional, Hwang, In-Wook, additional, Walker, Bright, additional, Jo, Pil Sung, additional, Lim, Bogyu, additional, and Kim, Jin Young, additional

Published
2019
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28. Dichroic Sb2O3/Ag/Sb2O3 Electrodes for Colorful Semitransparent Organic Solar Cells.

Author

Song, Seyeong, Cho, Hye Won, Jeong, Jaeki, Yoon, Yung Jin, Park, Song Yi, Song, Suhee, Woo, Byung Hoon, Jun, Young Chul, Walker, Bright, and Kim, Jin Young

Subjects
SOLAR cells, DYE-sensitized solar cells, ELECTRODES, BUILDING-integrated photovoltaic systems, THIN films, MULTILAYERED thin films, SHORT-circuit currents, OPTICAL reflection
Abstract

The pace of advancement and increasing power conversion efficiencies (PCEs) have provided the possibility for organic solar cells (OSCs) to be commercialized in a variety of applications, including semitransparent photovoltaics. The application of dielectric–metal–dielectric (DMD) transparent electrodes to OSCs is an effective way to achieve semitransparent OSCs with different colors. Herein, a DMD multilayer structure based on two Sb2O3 layers and silver (Ag) thin films as the top electrode is introduced. An ultrathin Sb2O3 layer is deposited between the electron transport layer and the Ag film as a bottom layer for the Sb2O3/Ag/Sb2O3 electrode; this layer inhibits Ag atom diffusion and aggregation, which leads to uniform formation of ultrathin Ag films. The thickness of the middle metal layer influences fill factor and short‐circuit current density values, which correlate well with device resistance and light reflection. For the top Sb2O3 layer, the thickness allows the selective transmittance of specific wavelengths of visible light while reflecting wavelengths that are not transmitted, creating a dichroic effect. OSCs are successfully fabricated using three kinds of colorful active layers in conjunction with Sb2O3/Ag/Sb2O3 electrodes, resulting in vividly colored devices with PCE of 6.33–7.88% and average visible transmittances of 23–30%. [ABSTRACT FROM AUTHOR]

Published
2020
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31. Conjugated Polyelectrolytes Bearing Various Ion Densities: Spontaneous Dipole Generation, Poling-Induced Dipole Alignment, and Interfacial Energy Barrier Control for Optoelectronic Device Applications

Author

Lee, Seungjin, primary, Nguyen, Thanh Luan, additional, Lee, Sang Yun, additional, Jang, Chung Hyeon, additional, Lee, Bo Ram, additional, Jung, Eui Dae, additional, Park, Song Yi, additional, Yoon, Yung Jin, additional, Kim, Jin Young, additional, Woo, Han Young, additional, and Song, Myoung Hoon, additional

Published
2018
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35. Pseudo-halide anion engineering for α-FAPbI3perovskite solar cells

Author

Jeong, Jaeki, Kim, Minjin, Seo, Jongdeuk, Lu, Haizhou, Ahlawat, Paramvir, Mishra, Aditya, Yang, Yingguo, Hope, Michael A., Eickemeyer, Felix T., Kim, Maengsuk, Yoon, Yung Jin, Choi, In Woo, Darwich, Barbara Primera, Choi, Seung Ju, Jo, Yimhyun, Lee, Jun Hee, Walker, Bright, Zakeeruddin, Shaik M., Emsley, Lyndon, Rothlisberger, Ursula, Hagfeldt, Anders, Kim, Dong Suk, Grätzel, Michael, and Kim, Jin Young

Abstract

Metal halide perovskites of the general formula ABX3—where A is a monovalent cation such as caesium, methylammonium or formamidinium; B is divalent lead, tin or germanium; and X is a halide anion—have shown great potential as light harvesters for thin-film photovoltaics1–5. Among a large number of compositions investigated, the cubic α-phase of formamidinium lead triiodide (FAPbI3) has emerged as the most promising semiconductor for highly efficient and stable perovskite solar cells6–9, and maximizing the performance of this material in such devices is of vital importance for the perovskite research community. Here we introduce an anion engineering concept that uses the pseudo-halide anion formate (HCOO−) to suppress anion-vacancy defects that are present at grain boundaries and at the surface of the perovskite films and to augment the crystallinity of the films. The resulting solar cell devices attain a power conversion efficiency of 25.6 per cent (certified 25.2 per cent), have long-term operational stability (450 hours) and show intense electroluminescence with external quantum efficiencies of more than 10 per cent. Our findings provide a direct route to eliminate the most abundant and deleterious lattice defects present in metal halide perovskites, providing a facile access to solution-processable films with improved optoelectronic performance.

Published
2021
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40. Defect-Induced in SituAtomic Doping in Transition Metal Dichalcogenides via Liquid-Phase Synthesis toward Efficient Electrochemical Activity

Author

Lee, Junghyun, Heo, Jungwoo, Lim, Hyeong Yong, Seo, Jihyung, Kim, Youngwoo, Kim, Jihyun, Kim, Ungsoo, Choi, Yunseong, Kim, Su Hwan, Yoon, Yung Jin, Shin, Tae Joo, Kang, Joohoon, Kwak, Sang Kyu, Kim, Jin Young, and Park, Hyesung

Abstract

Transition metal dichalcogenides (TMDs), due to their fascinating properties, have emerged as potential next-generation semiconducting nanomaterials across diverse fields of applications. When combined with other material systems, precise control of the intrinsic properties of the TMDs plays a vital role in maximizing their performance. Defect-induced atomic doping through introduction of a chalcogen vacancy into the TMDs lattices is known to be a promising strategy for modulating their characteristic properties. As a result, there is a need to develop tunable and scalable synthesis routes to achieve vacancy-modulated TMDs. Herein, we propose a facile liquid-phase ligand exchange approach for scalable, uniform, and vacancy-tunable synthesis of TMDs films. Varying the relative molar ratio of the chalcogen to transition metal precursors enabled the in situmodulation of the chalcogen vacancy concentrations without necessitating additional post-treatments. When employed as the electrocatalyst in the hydrogen evolution reaction (HER), the vacancy-modulated TMDs, exhibiting a synergetic effect on the energy level matching to the reduction potential of water and optimized free energy differences in the HER pathways, showed a significant enhancement in the hydrogen production viathe improved charge transfer kinetics and increased active sites. The proposed approach for synthesizing tunable vacancy-modulated TMDs with wafer-scale synthesis capability is, therefore, promising for better practical applications of TMDs.

Published
2020
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41. High-Performance Perovskite Light-Emitting Diodes with Surface Passivation of CsPbBrxI3–xNanocrystals via Antisolvent-Triggered Ion-Exchange

Author

Shin, Yun Seop, Yoon, Yung Jin, Lee, Kang Taek, Lee, Woojin, Kim, Hyeon Seo, Kim, Jae Won, Jang, Hyungsu, Kim, Minjin, Kim, Dong Suk, Kim, Gi-Hwan, and Kim, Jin Young

Abstract

Inorganic lead halide perovskite nanocrystals (PeNCs) have intensively drawn attention as efficient light-emitting materials for optoelectronic applications due to their fine optoelectronic properties with a high photoluminescence quantum yield and easily tunable saturated emission color. However, the poor stability of the red-emitting PeNCs has become an obstacle because of the uncontrollable iodine substitution from the PeNCs due to weak Pb–I bonding. In this work, we have demonstrated a ligand-mediated post-treatment (LMPT) method using a halide ion-pair ligand, tridodecylmethyl ammonium iodide (TrDAI), for the air stable and high-quality red-emitting PeNCs. Through the LMPT method, the optoelectronic properties of red-emitting PeNCs are dramatically improved resulting in a PLQY of 88.7% at 637 ± 2 nm emission with an increased carrier lifetime from 20.77 to 31.52 ns. We achieve highly efficient red perovskite light-emitting diodes exhibiting a maximum current efficiency of 7.69 cd A–1and an external quantum efficiency of 6.36% at 637 ± 2 nm electroluminescence emission with a sharp full-width at half maximum of 31 nm.

Published
2020
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47. Correction to High-Efficiency Colloidal Quantum Dot Photovoltaics via Robust Self-Assembled Monolayers

Author

Kim, Gi-Hwan, primary, García de Arquer, F. Pelayo, additional, Yoon, Yung Jin, additional, Lan, Xinzheng, additional, Liu, Mengxia, additional, Voznyy, Oleksandr, additional, Krishnan Jagadamma, Lethy, additional, Saud Abbas, Abdullah, additional, Yang, Zhenyu, additional, Fan, Fengjia, additional, Ip, Alexander H., additional, Kanjanaboos, Pongsakorn, additional, Hoogland, Sjoerd, additional, Amassian, Aram, additional, Kim, Jin Young, additional, and Sargent, Edward H., additional

Published
2015
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48. High-Efficiency Colloidal Quantum Dot Photovoltaics via Robust Self-Assembled Monolayers

Author

Kim, Gi-Hwan, primary, García de Arquer, F. Pelayo, additional, Yoon, Yung Jin, additional, Lan, Xinzheng, additional, Liu, Mengxia, additional, Voznyy, Oleksandr, additional, Yang, Zhenyu, additional, Fan, Fengjia, additional, Ip, Alexander H., additional, Kanjanaboos, Pongsakorn, additional, Hoogland, Sjoerd, additional, Kim, Jin Young, additional, and Sargent, Edward H., additional

Published
2015
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49. Formate as Anti-Oxidation Additives for Pb-Free FASnI(3) Perovskite Solar Cells

Author

Jang, Hyungsu, Lim, Hyeong Yong, Yoon, Yung Jin, Seo, Jongdeuk, Park, Chan Beom, Son, Jung Geon, Kim, Jae Won, Shin, Yun Seop, An, Na Gyeong, Choi, Seung Ju, Kim, Su Hwan, Jeong, Jaeki, Jo, Yimhyun, Kwak, Sang Kyu, Kim, Dong Suk, and Kim, Jin Young

Subjects
lead, ch3nh3pbi3, fabrication, stability, formate additives, perovskite solar cells, solvent, efficient, hysteresis, coordinate bonds, tin halide perovskites, halide passivation, pb-free perovskites, suppression of oxidation, performance, defects, sn-based perovskites
Abstract

Pb-free Sn-based perovskite solar cells (PSCs) have significant potential for application in photovoltaic devices because oftheir suitable bandgap, low exciton binding energy, high carrier mobility, and long diffusion length. However, their performance is hampered by several issues. Sn-based perovskites are highly susceptible to oxidation, which induces a high concentration of defects and degrades the chemical stability of the perovskite crystals. Herein, the anion formate (HCOO-) can effectively suppress the oxidation of Sn in the pure formamidinium tin triiodide (FASnI(3)) perovskite without using A-site cationic additives. Moreover, the presence of formate results in a uniform pinhole-free perovskite film with a low trap density, reduced charge carrier recombination, and improved charge extraction. Density functional theory calculations show that formate-treated FASnI(3) has improved stability against oxidative Sn degradation. The formate-treated PSC achieves a power conversion efficiency of 12.11% at a high open-circuit voltage of 0.71 V. The device exhibits improved stability in ambient air in which it maintained over 80% of its initial power conversion efficiency after 180 min because oxidation is inhibited owing to the strong interaction between Sn and formate.

50. Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells

Author

Jeong, Jaeki, Kim, Minjin, Seo, Jongdeuk, Lu, Haizhou, Ahlawat, Paramvir, Mishra, Aditya, Yang, Yingguo, Hope, Michael A., Eickemeyer, Felix T., Kim, Maengsuk, Yoon, Yung Jin, Choi, In Woo, Darwich, Barbara Primera, Choi, Seung Ju, Jo, Yimhyun, Lee, Jun Hee, Walker, Bright, Zakeeruddin, Shaik M., Emsley, Lyndon, Rothlisberger, Ursula, Hagfeldt, Anders, Kim, Dong Suk, Grätzel, Michael, and Kim, Jin Young

Abstract

Metal halide perovskites of the general formula ABX3—where A is a monovalent cation such as caesium, methylammonium or formamidinium; B is divalent lead, tin or germanium; and X is a halide anion—have shown great potential as light harvesters for thin-film photovoltaics1,2,3,4,5. Among a large number of compositions investigated, the cubic α-phase of formamidinium lead triiodide (FAPbI3) has emerged as the most promising semiconductor for highly efficient and stable perovskite solar cells6,7,8,9, and maximizing the performance of this material in such devices is of vital importance for the perovskite research community. Here we introduce an anion engineering concept that uses the pseudo-halide anion formate (HCOO−) to suppress anion-vacancy defects that are present at grain boundaries and at the surface of the perovskite films and to augment the crystallinity of the films. The resulting solar cell devices attain a power conversion efficiency of 25.6 per cent (certified 25.2 per cent), have long-term operational stability (450 hours) and show intense electroluminescence with external quantum efficiencies of more than 10 per cent. Our findings provide a direct route to eliminate the most abundant and deleterious lattice defects present in metal halide perovskites, providing a facile access to solution-processable films with improved optoelectronic performance.

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