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The use of organic semiconductors in electronic devices, including transistors, sensors, and memories, unlocks innovative possibilities such as streamlined fabrication processes, enhanced mechanical flexibility, and potential new applications. Nevertheless, the increasing technical demand for patterning organic semiconductors requires greater integration and functional implementation. This paper overviews recent efforts to pattern organic semiconductors compatible with electronic devices. The review categorizes the contributions of organic semiconductor patterning approaches, such as surface-grafting polymers, capillary force lithography, wettability, evaporation, and diffusion in organic semiconductor-based transistors and sensors, offering a timely perspective on unconventional approaches to enable the patterning of organic semiconductors with a strong focus on the advantages of organic semiconductor utilization. In addition, this review explores the opportunities and challenges of organic semiconductor-based integration, emphasizing the issues related to patterning and interconnection. [ABSTRACT FROM AUTHOR]

Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to their versatile capabilities in nonvolatile memory storage, analog circuit design, and emerging applications in neuromorphic computing. These devices leverage a distinctive floating-gate structure isolated from the surrounding circuitry, enabling the storage and manipulation of charge. The ability to retain charges even without external power makes them ideal for the applications requiring persistent data storage. This review explores the fundamental principles of floating-gate devices, focusing on their application in emerging logic devices combining floating-gate structures such as (i) reconfigurable logics, (ii) multi-valued logics, (iii) neuromorphic logics, and (iv) in-sensor computing. Various types of floating-gate devices for these new concept logics are examined, highlighting their key characteristics and advantages. Potential solutions and future research directions are also discussed. Based on the comprehensive review of recent three-year studies, we aim to provide an overview of floating-gate-based logic devices, emphasizing their significance in modern electronics and their potential to enable innovative applications in the fields of logic and memory devices. [ABSTRACT FROM AUTHOR]

Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advances in polymer dielectric materials and their integration into these devices, emphasizing their unique electrical, mechanical, and thermal properties that enable high performance and flexibility. By exploring their roles in self-sustaining technologies (e.g., artificial intelligence (AI) and Internet of Everything (IoE)), this review emphasizes the importance of polymer dielectric materials in enabling low-power, flexible, and sustainable electronic devices. The discussion covers design strategies to improve the dielectric constant, charge trapping, and overall device stability. Specific challenges, such as optimizing electrical properties, ensuring process scalability, and enhancing environmental stability, are also addressed. In addition, the review explores the synergistic integration of memory devices, FETs, and TENGs, focusing on their potential in flexible and wearable electronics, self-powered systems, and sustainable technologies. This review provides a comprehensive overview of the current state and prospects of polymer dielectric-based devices in advanced electronic applications by examining recent research breakthroughs and identifying future opportunities. [ABSTRACT FROM AUTHOR]

The proper functioning of p/n stacked ambipolar transistors relies on a harmonized flow of current through both holes and electrons. This balance is critical, given the substantial impact that efficient drain hole-current (IHole) and drain electron-current (IElectron) have on the performance of various application components. For instance, in light-emitting ambipolar devices, they enhance luminous efficiency, while in logic circuits, they contribute to improved noise margins and circuit operation accuracy. To achieve this balance, our study introduces a thin parylene interlayer inserted between the p/n junctions. This interlayer aims to induce a harmonized flow of IHole and IElectron, particularly by enhancing IHole in p/n stacked ambipolar transistors. In the case of the PTCDI-C13/parylene/DNTT transistor (PPD transistor) with the parylene interlayer, our investigation reveals a well-balanced polarity ratio of 1.08 : 1 between hole and electron currents flowing. Furthermore, we explored the application of a complementary-like inverter utilizing a PPD transistor as a pull-up device and a PTCDI-C13/DNTT transistor (PD transistor) as a pull-down transistor. This setup demonstrated improved noise margins and stable pull-up and pull-down operations, even under transient operation. [ABSTRACT FROM AUTHOR]

Interface issues with organic semiconductors on metal oxide challenge realizing a high‐performance anti‐ambipolar transistor (AAT) with stable operation. The motivation behind this research delves into the intricate landscape of AATs, elucidating their envisioned applications and constituent materials. Central to the authors, discourse is the pivotal role that fluoropolymers assume, acting as a bridge uniting n‐type metal oxide semiconductors (n‐oxide) with p‐type organic semiconductors (p‐organic), thereby unveiling a hitherto concealed facet of transistor advancement. Adopting a spatially separating layer (SSL) between p‐ and n‐type semiconductors of AAT is unconventional, but this p‐organic/SSL/n‐oxide junction (pSn) AAT exhibits stable operation also 215 days after fabrication and minimal hysteresis, which is 13.67 times smaller than a conventional p‐organic/n‐oxide junction (pn) AAT. The effect of SSL is closely studied through comparisons of the performance of single‐type transistors, trap density, and carrier behavior, which define the order of 1/f at low‐frequency noise analysis. In addition, the contribution of SSL is confirmed via the channel formation mechanism of AAT investigated through a two‐dimensional (2D) finite‐element simulation. The operation stability of pSn AAT is evaluated through combined stress tests, long‐term stability tests, and transient response tests. This research proposes SSL as a new design parameter to improve the AAT. [ABSTRACT FROM AUTHOR]

For enhanced security in hardware‐based security devices, it is essential to extract various independent characteristics from a single device to generate multiple keys based on specific values. Additionally, the secure destruction of authentication information is crucial for the integrity of the data. Doped amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs) using poly(vinylidene fluoride‐co‐hexafluoropropylene) (PVDF‐HFP) induce a dipole doping effect through a phase‐transition process, creating physically unclonable function (PUF) devices for secure user information protection. The PUF security key, generated at VGS = 20 V in a 20 × 10 grid, demonstrates uniformity of 42% and inter‐Hamming distance (inter‐HD) of 49.79% in the β‐phase of PVDF‐HFP. However, in the γ‐phase, the uniformity drops to 22.5%, and inter‐HD decreases to 35.74%, indicating potential security key destruction during the phase transition. To enhance security, a multi‐factor authentication (MFA) system is integrated, utilizing five security keys extracted from various TFT parameters. The security keys from turn‐on voltage (VON), VGS = 20 V, VGS = 30 V, mobility, and threshold voltage (Vth) exhibit near‐ideal uniformities and inter‐HDs, with the highest values of 58% and 51.68%, respectively. The dual security system, combining phase transition and MFA, establishes a robust protection mechanism for privacy‐sensitive user information. [ABSTRACT FROM AUTHOR]