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We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 °C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier , is 158 eV FWHM at 5.9 keV and 0 °C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450 μ m . The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy , aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline.

A low contrast nanosecond laser pulse with relatively low intensity (3 × 1016 W cm–2) was used to enhance the yield of induced nuclear reactions in advanced solid targets. In particular the "ultraclean" proton-boron fusion reaction, producing energetic alpha-particles without neutron generation, was chosen. A spatially well-defined layer of boron dopants in a hydrogen-enriched silicon substrate was used as target. The combination of the specific target geometry and the laser pulse temporal shape allowed enhancing the yield of alpha-particles up to 109 per steradian, i.e 100 times higher than previous experimental achievements. Moreover the alpha particle stream presented a clearly peaked angular and energy distribution, which make this secondary source attractive for potential applications. This result can be ascribed to the interaction of the long laser pre-pulse with the target and to the optimal target geometry and composition.

The use of a low contrast nanosecond laser pulse with a relatively low intensity (3?????1016?W?cm?2) allowed the enhancing of the yield of induced nuclear reactions in advanced solid targets. In particular the ?ultraclean? proton?boron fusion reaction, producing energetic alpha particles without neutron generation, was chosen. A spatially well-defined layer of boron dopants in a hydrogen-enriched silicon substrate was used as a target. A combination of the specific target composition and the laser pulse temporal shape allowed the enhancing of the yield of alpha particles up to 109 per steradian. This result can be ascribed to the interaction of the long-laser pre-pulse with the target and to the optimal target geometry and composition.

CdZnTe crystals are used for the realization of X-ray detectors. In particular, pixel detectors can be exploited for many application fields such as medical diagnostics, security, and industrial inspection. In the last years, CdZnTe crystals have routinely been grown by the boron oxide encapsulated vertical Bridgman technique. In this work, it is shown that linear array detectors have been prepared based on this material. The detectors show low leakage current and have been coupled to a specifically designed research-grade low noise ASIC. The detectors show good spectroscopic characteristics and no polarization effects, meeting the requirements for the realization of high throughput, multi-energy scanners.

We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16} W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

A study of the time response of 4H-SiC radiation detectors by means of a custom simulator is presented. The detector response to X-rays has been studied under different bias conditions and interaction points within the detector active region. The contributions of electrons and holes to the current and voltage signals have been disentangled to determine their effects on the detector response speed. Signal rise-times between 340 ps and 710 ps and pulse widths of 0.93 ns and 1.12 ns Full Width at Half Maximum (FWHM) have been derived, in good agreement with experimental results.

A system constituted by a Silicon Drift Detector (SDD), fabricated with an innovative technology for minimizing the anode current, and a new CMOS charge sensitive preamplifier (CSA), designed for ultimate low noise performance, has been realized and experimentally characterized. The SDD is hexagonal with an active area of 13 mm2. The current density measured at the anode with the detector in operating condition is 25 pA/cm2 at +20°C. The CSA—named SIRIO—has intrinsic Equivalent Noise Charge (ENC) ranging from 2.9 to 1.5 electrons r.m.s. at 0.8 μs and 11 μs peaking times at room temperature, respectively. With the SDD-SIRIO system at +21°C, an energy resolution of 141 eV FWHM on the 55Fe line at 5.9 keV and 74 eV FWHM on the pulser line with a noise threshold of 170 eV have been measured at 0.8 μs peaking time. The system has been tested from −30°C to +30°C with energy resolution from 124 eV to 148 eV FWHM at 5.9 keV. A moderate cooling at +10°C is sufficient to reach 133 eV FWHM at 5.9 keV.