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1. This unique nanostructure with 2D MoS2 nanosheets nanoconfined into amorphous carbon layers delivered the excellent electrochemical performance. 2. The composite exhibited high reversible specific capacity, good rate capability and stability.

The hybrid with super-structures is an effective strategy to improve their electrochemical performance. The Fe7S8-C/ZnS-C@MoS2/rGO sample delivered high reversible capacities in Lithium/sodium storage.

Sensory adaptation is an essential function for humans to live on the earth. Herein, a hybrid synaptic phototransistor based on the mixed-halide perovskite/organic semiconductor film is reported. This hybrid phototransistor achieves photosensitive performance including a high photoresponsivity over 4 × 103 A/W and an excellent specific detectivity of 2.8 × 1016 Jones. Due to the photoinduced halide-ion segregation of the mixed-halide perovskites and their slow recovery properties, the experience-history-dependent sensory adaptation behavior can be mimicked. Moreover, the light pulse width, intensity, light wavelength, and gate bias can be used to regulate the adaptation processes to improve its adaptability and perceptibility in different environments. The CsPbBrxI3-x/organic semiconductor hybrid films produced by spin coating are beneficial to large-scale fabrication. This study fabricates a novel solution-processable light-stimulated synapse based on inorganic perovskites for mimicking the human sensory adaptation that makes it possible to approach artificial neural sensory systems.

Amorphous multi-element oxide films were grown using a facile temperature-controlled approach. The compact IMZO film was deposited and the size of voids formed in the film reduced greatly as compared with that of the pure ZnO film. The 5 nm-thick IMZO was patterned directly with the aid of a stencil mask and applied to a thin film transistor which afforded superior performance including a field effect mobility value of 26.67 cm2 V−1 s−1 and an Ion/Ioff ratio of 7.19 × 107. Nowadays, the physics based drain current model is in great demand for better circuit design. In this work, the accurate and continuous drain current description of as fabricated multi-element oxide devices was derived using a surface potential based model with a charge sheet approach. Considering the voltage losses applied to the electrode for the existence of the interface trap, the modification factors of voltage were effectively introduced for better fitting which assisted the analysis of electrical properties of active films.

An artificial synaptic device that can provide color discrimination, image storage, and image recognition is highly required to mimic the human vision for biological robots. All-inorganic halide perovskites have attracted extensive attention for the reason of their high stability and favorable photoelectric properties. In this study, a light-stimulated synaptic phototransistor based on a CsPbBr3/organic semiconductor hybrid film is reported. The fabricated CsPbBr3 film exhibits an island structure, which reduces the hysteresis effectively and at the same time achieves a high specific detectivity of up to 2 × 1015 Jones. The decay of the photocurrent can be delayed by changing the gate bias, which is essential for achieving high-performance light-stimulated synaptic devices. Due to the outstanding detectivity of the device, the obvious synaptic functions can be observed when triggered by a light signal with a power of 1.6 nW that is much weaker than previous most perovskite-based hybrid synaptic phototransistors under a low operating voltage of -1 V. The electrical power consumption of the device could be as low as 0.076 pJ when the power of light spike was 7.36 nW. Taking into account this characterization, with changing of light intensity or wavelength, the contrast of the image was enlarged, which can further promote the image recognition accuracy. More significantly, this CsPbBr3/TIPS hybrid film can be fabricated by facile and low-cost solution processes. This study indicates the great potential of solution-processed perovskite-based light-stimulated synapses for future artificial visual systems.

Recently, perovskite quantum dots (PQDs) were employed as promising emitters in light-emitting diode devices (LEDs) mainly owing to their marvelous photoelectronics properties. However, these perovskite QLEDs suffered from the inefficient performance, especially their serious efficiency roll-off probably due to the exciton recombination dynamic in the interface of PQDs films and charge imbalance resulting from low electrical transportation. Herein, sodium dodecyl sulfate (SDS) was effectively introduced to synthesize PQDs with many excellent properties and eventually suppressed the efficiency roll-off of QLEDs. SDS-based PQDs films exhibited obviously enhanced radiative recombination, reduced trap density, and increased carrier mobility, especially the transportation of electrons. Therefore, the charge carrier was balanced at high current density together with the remarkably suppressed efficiency roll-off. QLEDs fabricated by SDS-capped PQDs exhibited significantly improved maximum brightness of 193,810 cd/m2, and achieve the external quantum efficiency of 10.13%. More importantly, the EQE roll-off of QLED optimized in the thickness of emitting layer was only 1.5% at the current density of 200 mA/cm2, representing a prominent achievement of our strategy.

CuInS2-based quantum-dots (QDs) have been highlighted as promising photoelectric materials for their low toxicity and color adjustable emissions as well as stability. Here, multi-shell CuInS2/ZnS/ZnS QDs with high PLQY of 76% were synthesized by employing a high temperature and long-time growth strategy while highly bright and efficient quantum-dot-light-emitting diodes (QLEDs) were fabricated by using these multi-shell QDs as an emission layer and polyethylenimine (PEI) as an insulating layer, respectively. By introducing PEI between the QDs and ZnO EML layers of the QLEDs, the balance of the carriers within the QDs layer injected from HTL and ETL was greatly improved. As a result, comparing to the QLEDs without PEI, the greatly improved efficiency (1.9 times as high as that of the QLEDs without PEI) has been achieved in the optimized QLEDs with PEI. These QLEDs exhibits an outstanding performance with the maximum EQE of 1.56% and the maximum brightness of 5825 cd/m2.