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1. STCF Conceptual Design Report: Volume 1 -- Physics & Detector

Author

Achasov, M., Ai, X. C., Aliberti, R., An, L. P., An, Q., Bai, X. Z., Bai, Y., Bakina, O., Barnyakov, A., Blinov, V., Bobrovnikov, V., Bodrov, D., Bogomyagkov, A., Bondar, A., Boyko, I., Bu, Z. H., Cai, F. M., Cai, H., Cao, J. J., Cao, Q. H., Cao, Z., Chang, Q., Chao, K. T., Chen, D. Y., Chen, H., Chen, H. X., Chen, J. F., Chen, K., Chen, L. L., Chen, P., Chen, S. L., Chen, S. M., Chen, S., Chen, S. P., Chen, W., Chen, X. F., Chen, X., Chen, Y., Chen, Y. Q., Cheng, H. Y., Cheng, J., Cheng, S., Dai, J. P., Dai, L. Y., Dai, X. C., Dedovich, D., Denig, A., Denisenko, I., Ding, D. Z., Dong, L. Y., Dong, W. H., Druzhinin, V., Du, D. S., Du, Y. J., Du, Z. G., Duan, L. M., Epifanov, D., Fan, Y. L., Fang, S. S., Fang, Z. J., Fedotovich, G., Feng, C. Q., Feng, X., Feng, Y. T., Fu, J. L., Gao, J., Ge, P. S., Geng, C. Q., Geng, L. S., Gilman, A., Gong, L., Gong, T., Gradl, W., Gu, J. L., Escalante, A. G., Gui, L. C., Guo, F. K., Guo, J. C., Guo, J., Guo, Y. P., Guo, Z. H., Guskov, A., Han, K. L., Han, L., Han, M., Hao, X. Q., He, J. B., He, S. Q., He, X. G., He, Y. L., He, Z. B., Heng, Z. X., Hou, B. L., Hou, T. J., Hou, Y. R., Hu, C. Y., Hu, H. M., Hu, K., Hu, R. J., Hu, X. H., Hu, Y. C., Hua, J., Huang, G. S., Huang, J. S., Huang, M., Huang, Q. Y., Huang, W. Q., Huang, X. T., Huang, X. J., Huang, Y. B., Huang, Y. S., Hüsken, N., Ivanov, V., Ji, Q. P., Jia, J. J., Jia, S., Jia, Z. K., Jiang, H. B., Jiang, J., Jiang, S. Z., Jiao, J. B., Jiao, Z., Jing, H. J., Kang, X. L., Kang, X. S., Ke, B. C., Kenzie, M., Khoukaz, A., Koop, I., Kravchenko, E., Kuzmin, A., Lei, Y., Levichev, E., Li, C. H., Li, C., Li, D. Y., Li, F., Li, G., Li, H. B., Li, H., Li, H. N., Li, H. J., Li, H. L., Li, J. M., Li, J., Li, L., Li, L. Y., Li, N., Li, P. R., Li, R. H., Li, S., Li, T., Li, W. J., Li, X. H., Li, X. Q., Li, Y., Li, Y. Y., Li, Z. J., Liang, H., Liang, J. H., Liao, G. R., Liao, L. Z., Liao, Y., Lin, C. X., Lin, X. S., Liu, B. J., Liu, C. W., Liu, D., Liu, F., Liu, G. M., Liu, H. B., Liu, J., Liu, J. J., Liu, J. B., Liu, K., Liu, K. Y., Liu, L., Liu, Q., Liu, S. B., Liu, T., Liu, X., Liu, Y. W., Liu, Y., Liu, Y. L., Liu, Z. Q., Liu, Z. Y., Liu, Z. W., Logashenko, I., Long, Y., Lu, C. G., Lu, N., Lü, Q. F., Lu, Y., Lv, Z., Lukin, P., Luo, F. J., Luo, T., Luo, X. F., Lyu, H. J., Lyu, X. R., Ma, J. P., Ma, P., Ma, Y., Maas, F., Malde, S., Matvienko, D., Meng, Z. X., Mitchell, R., Dias, J. M., Nefediev, A., Nefedov, Y., Olsen, S. L., Ouyang, Q., Pakhlov, P., Pakhlova, G., Pan, X., Pan, Y., Passemar, E., Pei, Y. P., Peng, H. P., Peng, L., Peng, X. Y., Peng, X. J., Peters, K., Pivovarov, S., Pyata, E., Qi, B. B., Qi, Y. Q., Qian, W. B., Qian, Y., Qiao, C. F., Qin, J. J., Qin, L. Q., Qin, X. S., Qiu, T. L., Rademacker, J., Redmer, C. F., Sang, H. Y., Saur, M., Shan, W., Shan, X. Y., Shang, L. L., Shao, M., Shekhtman, L., Shen, C. P., Shen, J. M., Shen, Z. T., Shi, H. C., Shi, X. D., Shwartz, B., Sokolov, A., Song, J. J., Song, W. M., Song, Y., Song, Y. X., Sukharev, A., Sun, J. F., Sun, L., Sun, X. M., Sun, Y. J., Sun, Z. P., Tang, J., Tang, S. S., Tang, Z. B., Tian, C. H., Tian, J. S., Tikhonov, Y., Todyshev, K., Uglov, T., Vorobyev, V., Wan, B. D., Wang, B. L., Wang, B., Wang, D. Y., Wang, G. Y., Wang, G. L., Wang, H. L., Wang, J., Wang, J. H., Wang, J. C., Wang, M. L., Wang, R., Wang, S. B., Wang, W., Wang, W. P., Wang, X. C., Wang, X. D., Wang, X. L., Wang, X. P., Wang, X. F., Wang, Y. D., Wang, Y. P., Wang, Y. Q., Wang, Y. L., Wang, Y. G., Wang, Z. Y., Wang, Z. L., Wang, Z. G., Wei, D. H., Wei, X. L., Wei, X. M., Wen, Q. G., Wen, X. J., Wilkinson, G., Wu, B., Wu, J. J., Wu, L., Wu, P. W., Wu, T. W., Wu, Y. S., Xia, L., Xiang, T., Xiao, C. W., Xiao, D., Xiao, M., Xie, Y. H., Xing, Y., Xing, Z. Z., Xiong, X. N., Xu, F. R., Xu, J., Xu, L. L., Xu, Q. N., Xu, X. C., Xu, X. P., Xu, Y. C., Xu, Y. P., Xu, Y., Xu, Z. Z., Xuan, D. W., Xue, F. F., Yan, L., Yan, M. J., Yan, W. B., Yan, W. C., Yan, X. S., Yang, B. F., Yang, C., Yang, H. J., Yang, H. R., Yang, H. T., Yang, J. F., Yang, S. L., Yang, Y. D., Yang, Y. H., Yang, Y. S., Yang, Y. L., Yang, Z. Y., Yao, D. L., Yin, H., Yin, X. H., Yokozaki, N., You, S. Y., You, Z. Y., Yu, C. X., Yu, F. S., Yu, G. L., Yu, H. L., Yu, J. S., Yu, J. Q., Yuan, L., Yuan, X. B., Yue, Y. F., Zeng, M., Zeng, S., Zhang, A. L., Zhang, B. W., Zhang, G. Y., Zhang, G. Q., Zhang, H. J., Zhang, H. B., Zhang, J. Y., Zhang, J. L., Zhang, J., Zhang, L., Zhang, L. M., Zhang, R., Zhang, S. L., Zhang, T., Zhang, X., Zhang, Y., Zhang, Y. X., Zhang, Y. T., Zhang, Y. F., Zhang, Y. C., Zhang, Y. M., Zhang, Y. L., Zhang, Z. H., Zhang, Z. Y., Zhao, H. Y., Zhao, J., Zhao, L., Zhao, M. G., Zhao, Q., Zhao, R. G., Zhao, R. P., Zhao, Z. G., Zhao, Z. X., Zhemchugov, A., Zheng, B., Zheng, L., Zheng, Q. B., Zheng, R., Zheng, Y. H., Zhong, X. H., Zhou, H. J., Zhou, H. Q., Zhou, H., Zhou, S. H., Zhou, X., Zhou, X. K., Zhou, X. R., Zhou, Y. L., Zhou, Y., Zhou, Y. X., Zhou, Z. Y., Zhu, J. Y., Zhu, K., Zhu, R. D., Zhu, R. L., Zhu, S. H., Zhu, Y. C., Zhu, Z. A., Zhukova, V., Zhulanov, V., Zou, B. S., and Zuo, Y. B.

Subjects
High Energy Physics - Experiment, High Energy Physics - Phenomenology, Physics - Instrumentation and Detectors
Abstract

The Super $\tau$-Charm facility (STCF) is an electron-positron collider proposed by the Chinese particle physics community. It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of $0.5\times 10^{35}{\rm cm}^{-2}{\rm s}^{-1}$ or higher. The STCF will produce a data sample about a factor of 100 larger than that by the present $\tau$-Charm factory -- the BEPCII, providing a unique platform for exploring the asymmetry of matter-antimatter (charge-parity violation), in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions, as well as searching for exotic hadrons and physics beyond the Standard Model. The STCF project in China is under development with an extensive R\&D program. This document presents the physics opportunities at the STCF, describes conceptual designs of the STCF detector system, and discusses future plans for detector R\&D and physics case studies.

Published
2023
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2. STCF conceptual design report (Volume 1): Physics & detector

Author

Achasov, M., Ai, X. C., An, L. P., Aliberti, R., An, Q., Bai, X. Z., Bai, Y., Bakina, O., Barnyakov, A., Blinov, V., Bobrovnikov, V., Bodrov, D., Bogomyagkov, A., Bondar, A., Boyko, I., Bu, Z. H., Cai, F. M., Cai, H., Cao, J. J., Cao, Q. H., Cao, X., Cao, Z., Chang, Q., Chao, K. T., Chen, D. Y., Chen, H., Chen, H. X., Chen, J. F., Chen, K., Chen, L. L., Chen, P., Chen, S. L., Chen, S. M., Chen, S., Chen, S. P., Chen, W., Chen, X., Chen, X. F., Chen, X. R., Chen, Y., Chen, Y. Q., Cheng, H. Y., Cheng, J., Cheng, S., Cheng, T. G., Dai, J. P., Dai, L. Y., Dai, X. C., Dedovich, D., Denig, A., Denisenko, I., Dias, J. M., Ding, D. Z., Dong, L. Y., Dong, W. H., Druzhinin, V., Du, D. S., Du, Y. J., Du, Z. G., Duan, L. M., Epifanov, D., Fan, Y. L., Fang, S. S., Fang, Z. J., Fedotovich, G., Feng, C. Q., Feng, X., Feng, Y. T., Fu, J. L., Gao, J., Gao, Y. N., Ge, P. S., Geng, C. Q., Geng, L. S., Gilman, A., Gong, L., Gong, T., Gou, B., Gradl, W., Gu, J. L., Guevara, A., Gui, L. C., Guo, A. Q., Guo, F. K., Guo, J. C., Guo, J., Guo, Y. P., Guo, Z. H., Guskov, A., Han, K. L., Han, L., Han, M., Hao, X. Q., He, J. B., He, S. Q., He, X. G., He, Y. L., He, Z. B., Heng, Z. X., Hou, B. L., Hou, T. J., Hou, Y. R., Hu, C. Y., Hu, H. M., Hu, K., Hu, R. J., Hu, W. H., Hu, X. H., Hu, Y. C., Hua, J., Huang, G. S., Huang, J. S., Huang, M., Huang, Q. Y., Huang, W. Q., Huang, X. T., Huang, X. J., Huang, Y. B., Huang, Y. S., Hüsken, N., Ivanov, V., Ji, Q. P., Jia, J. J., Jia, S., Jia, Z. K., Jiang, H. B., Jiang, J., Jiang, S. Z., Jiao, J. B., Jiao, Z., Jing, H. J., Kang, X. L., Kang, X. S., Ke, B. C., Kenzie, M., Khoukaz, A., Koop, I., Kravchenko, E., Kuzmin, A., Lei, Y., Levichev, E., Li, C. H., Li, C., Li, D. Y., Li, F., Li, G., Li, G., Li, H. B., Li, H., Li, H. N., Li, H. J., Li, H. L., Li, J. M., Li, J., Li, L., Li, L., Li, L. Y., Li, N., Li, P. R., Li, R. H., Li, S., Li, T., Li, W. J., Li, X., Li, X. H., Li, X. Q., Li, X. H., Li, Y., Li, Y. Y., Li, Z. J., Liang, H., Liang, J. H., Liang, Y. T., Liao, G. R., Liao, L. Z., Liao, Y., Lin, C. X., Lin, D. X., Lin, X. S., Liu, B. J., Liu, C. W., Liu, D., Liu, F., Liu, G. M., Liu, H. B., Liu, J., Liu, J. J., Liu, J. B., Liu, K., Liu, K. Y., Liu, K., Liu, L., Liu, Q., Liu, S. B., Liu, T., Liu, X., Liu, Y. W., Liu, Y., Liu, Y. L., Liu, Z. Q., Liu, Z. Y., Liu, Z. W., Logashenko, I., Long, Y., Lu, C. G., Lu, J. X., Lu, N., Lü, Q. F., Lu, Y., Lu, Y., Lu, Z., Lukin, P., Luo, F. J., Luo, T., Luo, X. F., Lyu, H. J., Lyu, X. R., Ma, J. P., Ma, P., Ma, Y., Ma, Y. M., Maas, F., Malde, S., Matvienko, D., Meng, Z. X., Mitchell, R., Nefediev, A., Nefedov, Y., Olsen, S. L., Ouyang, Q., Pakhlov, P., Pakhlova, G., Pan, X., Pan, Y., Passemar, E., Pei, Y. P., Peng, H. P., Peng, L., Peng, X. Y., Peng, X. J., Peters, K., Pivovarov, S., Pyata, E., Qi, B. B., Qi, Y. Q., Qian, W. B., Qian, Y., Qiao, C. F., Qin, J. J., Qin, J. J., Qin, L. Q., Qin, X. S., Qiu, T. L., Rademacker, J., Redmer, C. F., Sang, H. Y., Saur, M., Shan, W., Shan, X. Y., Shang, L. L., Shao, M., Shekhtman, L., Shen, C. P., Shen, J. M., Shen, Z. T., Shi, H. C., Shi, X. D., Shwartz, B., Sokolov, A., Song, J. J., Song, W. M., Song, Y., Song, Y. X., Sukharev, A., Sun, J. F., Sun, L., Sun, X. M., Sun, Y. J., Sun, Z. P., Tang, J., Tang, S. S., Tang, Z. B., Tian, C. H., Tian, J. S., Tian, Y., Tikhonov, Y., Todyshev, K., Uglov, T., Vorobyev, V., Wan, B. D., Wang, B. L., Wang, B., Wang, D. Y., Wang, G. Y., Wang, G. L., Wang, H. L., Wang, J., Wang, J. H., Wang, J. C., Wang, M. L., Wang, R., Wang, R., Wang, S. B., Wang, W., Wang, W. P., Wang, X. C., Wang, X. D., Wang, X. L., Wang, X. L., Wang, X. P., Wang, X. F., Wang, Y. D., Wang, Y. P., Wang, Y. Q., Wang, Y. L., Wang, Y. G., Wang, Z. Y., Wang, Z. Y., Wang, Z. L., Wang, Z. G., Wei, D. H., Wei, X. L., Wei, X. M., Wen, Q. G., Wen, X. J., Wilkinson, G., Wu, B., Wu, J. J., Wu, L., Wu, P., Wu, T. W., Wu, Y. S., Xia, L., Xiang, T., Xiao, C. W., Xiao, D., Xiao, M., Xie, K. P., Xie, Y. H., Xing, Y., Xing, Z. Z., Xiong, X. N., Xu, F. R., Xu, J., Xu, L. L., Xu, Q. N., Xu, X. C., Xu, X. P., Xu, Y. C., Xu, Y. P., Xu, Y., Xu, Z. Z., Xuan, D. W., Xue, F. F., Yan, L., Yan, M. J., Yan, W. B., Yan, W. C., Yan, X. S., Yang, B. F., Yang, C., Yang, H. J., Yang, H. R., Yang, H. T., Yang, J. F., Yang, S. L., Yang, Y. D., Yang, Y. H., Yang, Y. S., Yang, Y. L., Yang, Z. W., Yang, Z. Y., Yao, D. L., Yin, H., Yin, X. H., Yokozaki, N., You, S. Y., You, Z. Y., Yu, C. X., Yu, F. S., Yu, G. L., Yu, H. L., Yu, J. S., Yu, J. Q., Yuan, L., Yuan, X. B., Yuan, Z. Y., Yue, Y. F., Zeng, M., Zeng, S., Zhang, A. L., Zhang, B. W., Zhang, G. Y., Zhang, G. Q., Zhang, H. J., Zhang, H. B., Zhang, J. Y., Zhang, J. L., Zhang, J., Zhang, L., Zhang, L. M., Zhang, Q. A., Zhang, R., Zhang, S. L., Zhang, T., Zhang, X., Zhang, Y., Zhang, Y. J., Zhang, Y. X., Zhang, Y. T., Zhang, Y. F., Zhang, Y. C., Zhang, Y., Zhang, Y., Zhang, Y. M., Zhang, Y. L., Zhang, Z. H., Zhang, Z. Y., Zhang, Z. Y., Zhao, H. Y., Zhao, J., Zhao, L., Zhao, M. G., Zhao, Q., Zhao, R. G., Zhao, R. P., Zhao, Y. X., Zhao, Z. G., Zhao, Z. X., Zhemchugov, A., Zheng, B., Zheng, L., Zheng, Q. B., Zheng, R., Zheng, Y. H., Zhong, X. H., Zhou, H. J., Zhou, H. Q., Zhou, H., Zhou, S. H., Zhou, X., Zhou, X. K., Zhou, X. P., Zhou, X. R., Zhou, Y. L., Zhou, Y., Zhou, Y. X., Zhou, Z. Y., Zhu, J. Y., Zhu, K., Zhu, R. D., Zhu, R. L., Zhu, S. H., Zhu, Y. C., Zhu, Z. A., Zhukova, V., Zhulanov, V., Zou, B. S., and Zuo, Y. B.

Published
2024
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3. Effect of extrusion process on the stress corrosion cracking resistance of 7N01 aluminum alloy

Author

Xie H., Yang Z., Ma Q. H., Meng W., Hu L., and Yin X. H.

Subjects
stress corrosion cracking, extrusion process, recrystallization, al-zn-mg alloys, Mining engineering. Metallurgy, TN1-997
Abstract

In this work, the effect of extrusion process on the mechanical properties and the stress corrosion cracking (SCC) resistance of 7N01 aluminum alloys were systematically investigated by tensile testing, slow strain rate testing (SSRT), electrochemical experiment, scanning electron microscopy (SEM), electron backscattered diffraction (EBSD), and transmission electron microscope (TEM) observation, respectively. The results showed that with the increase of extrusion temperature, the SCC resistances of the alloys deteriorated, and this tendency was also proved by the electrochemical experiments including polarization curves and EIS results. The Microstructure observation results revealed that recrystallization played an important role on the SCC resistances of the alloys: the new recrystallization grain boundaries with higher grain boundary energy and wider PFZ could magnify the difference of electrochemical property between grain boundary area and the grain interior, thus raising the stress corrosion crack sensitivity of the alloys.

Published
2023
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4. Microstructure and mechanical properties of A7N01 aluminum alloy weld joints filled with ER5356 and ER5087 weld wires

Author

Xie H., Hu L., Ma Q.-H., Meng W., and Yin X.-H.

Subjects
aluminum alloys, er5087 welding wire, er5356 welding wire, microstructure, mechanical properties, Mining engineering. Metallurgy, TN1-997
Abstract

The A7N01-T5 aluminum alloy plates with the thickness of 12 mm were welded with the ER5356 and ER5087 welding wires, respectively, by the method of Metal Inert Gas (MIG) welding. The mechanical properties and microstructures of the welded joints were investigated by micro-hardness measurement, tensile test, energy dispersive spectroscopy (EDS), electron backscattered diffraction (EBSD) and transmission electron microscopy (TEM). The results showed that the tensile strength and elongation of 7N01/5087 welded joint (the 7N01 aluminum alloy plate welded with ER5087 wire) were greater than those of 7N01/5356 welded joint (the 7N01 aluminum alloy plate welded with ER5356 wires), respectively. The high strength and the good elongation of 7N01/5087 welded joint were mainly attributed to the microstructure refinement in the weld zone through adding Zr element to promote the nucleation of Al grains around the Al3Zr sites.

Published
2022
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5. Development of an atomic spectra research platform based on a 30-keV electron beam ion trap.

Author

Ji, H. J., Zhang, H. M., Lyu, B., Yang, Y., Bin, B., Bae, C., Lin, Z. C., Zeng, C., Huang, S. H., Shen, Y. C., Yin, X. H., and Dai, S. Y.

Subjects
NUCLEAR research, ATOMIC spectra, ION traps, FUSION reactors, MAGNETIC confinement, ELECTRON beams
Abstract

Electron Beam Ion Traps (EBITs) serve as efficient tools for producing and studying highly charged ions. In response to the diagnostic requirements of upcoming magnetic confinement fusion devices, a medium-energy atomic spectra research platform based on a compact EBIT is developed. This platform achieves a central magnetic field of up to 1.0 T, with electron beam currents reaching 20 mA and electron energies up to 30 keV, similar to the electron temperature on fusion reactors. The developed atomic spectra platform successfully provided spectral data for elements such as argon, xenon, iron, and tungsten. This platform stands as a valuable asset for advancing research in nuclear fusion, particularly concerning impurity spectroscopic diagnostics. [ABSTRACT FROM AUTHOR]

Published
2024
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6. Development and test of the laser blow-off impurity injection system in experimental advanced superconducting tokamak.

Author

Shen, Y. C., Fan, Y., Zhang, H. M., Lyu, B., Lin, Z. C., Yin, X. H., Wang, F. D., Fu, J., Ji, H. J., Zeng, C., Sun, B., and Mao, L. Y.

Subjects
ALUMINUM films, REMOTE control, TOKAMAKS, LASERS, TEST design
Abstract

The Laser Blow-Off (LBO) impurity injection system is a crucial tool for studying impurity transport and plasma behavior. Conducting proactive impurity transport research is challenging on experimental advanced superconducting tokamak (EAST) due to the uncontrollable generation of impurity sources; therefore, it is necessary to develop a laser blow-off impurity injection system for injecting controlled trace impurity particles. This study presents the design and test results of an LBO system for the EAST. The system aims to provide precise and repeatable control over the timing and quantity of impurity injection. The system primarily consists of a laser source, two mirrors, a moveable focusing lens, a target material, and a vacuum system. The movement of the focusing lens is achieved by a three-dimensional displacement system. The operation of the system is completed by a remote control system. With the accurate control system, the laser spot diameter is adjustable, allowing for modification of impurity injection quantity. The test results demonstrate that the system can rapidly detect external trigger signals and ensure precise timing for the impurity injection. Furthermore, this system can also quickly change the focal point of the laser spot, addressing the requirements for impurity injections during the experiments with less than 0.4 mm position error for laser spot focusing. Test results have shown that the aluminum film material can be peeled off by the LBO system when the laser energy exceeds 650 mJ and the smallest ablation spot is about 1 mm. This study is of significant importance for conducting plasma impurity transport research on the EAST. [ABSTRACT FROM AUTHOR]

Published
2024
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7. STCF conceptual design report (Volume 1): Physics & detector

Author

Achasov, M., primary, Ai, X. C., additional, An, L. P., additional, Aliberti, R., additional, An, Q., additional, Bai, X. Z., additional, Bai, Y., additional, Bakina, O., additional, Barnyakov, A., additional, Blinov, V., additional, Bobrovnikov, V., additional, Bodrov, D., additional, Bogomyagkov, A., additional, Bondar, A., additional, Boyko, I., additional, Bu, Z. H., additional, Cai, F. M., additional, Cai, H., additional, Cao, J. J., additional, Cao, Q. H., additional, Cao, X., additional, Cao, Z., additional, Chang, Q., additional, Chao, K. T., additional, Chen, D. Y., additional, Chen, H., additional, Chen, H. X., additional, Chen, J. F., additional, Chen, K., additional, Chen, L. L., additional, Chen, P., additional, Chen, S. L., additional, Chen, S. M., additional, Chen, S., additional, Chen, S. P., additional, Chen, W., additional, Chen, X., additional, Chen, X. F., additional, Chen, X. R., additional, Chen, Y., additional, Chen, Y. Q., additional, Cheng, H. Y., additional, Cheng, J., additional, Cheng, S., additional, Cheng, T. G., additional, Dai, J. P., additional, Dai, L. Y., additional, Dai, X. C., additional, Dedovich, D., additional, Denig, A., additional, Denisenko, I., additional, Dias, J. M., additional, Ding, D. Z., additional, Dong, L. Y., additional, Dong, W. H., additional, Druzhinin, V., additional, Du, D. S., additional, Du, Y. J., additional, Du, Z. G., additional, Duan, L. M., additional, Epifanov, D., additional, Fan, Y. L., additional, Fang, S. S., additional, Fang, Z. J., additional, Fedotovich, G., additional, Feng, C. Q., additional, Feng, X., additional, Feng, Y. T., additional, Fu, J. L., additional, Gao, J., additional, Gao, Y. N., additional, Ge, P. S., additional, Geng, C. Q., additional, Geng, L. S., additional, Gilman, A., additional, Gong, L., additional, Gong, T., additional, Gou, B., additional, Gradl, W., additional, Gu, J. L., additional, Guevara, A., additional, Gui, L. C., additional, Guo, A. Q., additional, Guo, F. K., additional, Guo, J. C., additional, Guo, J., additional, Guo, Y. P., additional, Guo, Z. H., additional, Guskov, A., additional, Han, K. L., additional, Han, L., additional, Han, M., additional, Hao, X. Q., additional, He, J. B., additional, He, S. Q., additional, He, X. G., additional, He, Y. L., additional, He, Z. B., additional, Heng, Z. X., additional, Hou, B. L., additional, Hou, T. J., additional, Hou, Y. R., additional, Hu, C. Y., additional, Hu, H. M., additional, Hu, K., additional, Hu, R. J., additional, Hu, W. H., additional, Hu, X. H., additional, Hu, Y. C., additional, Hua, J., additional, Huang, G. S., additional, Huang, J. S., additional, Huang, M., additional, Huang, Q. Y., additional, Huang, W. Q., additional, Huang, X. T., additional, Huang, X. J., additional, Huang, Y. B., additional, Huang, Y. S., additional, Hüsken, N., additional, Ivanov, V., additional, Ji, Q. P., additional, Jia, J. J., additional, Jia, S., additional, Jia, Z. K., additional, Jiang, H. B., additional, Jiang, J., additional, Jiang, S. Z., additional, Jiao, J. B., additional, Jiao, Z., additional, Jing, H. J., additional, Kang, X. L., additional, Kang, X. S., additional, Ke, B. C., additional, Kenzie, M., additional, Khoukaz, A., additional, Koop, I., additional, Kravchenko, E., additional, Kuzmin, A., additional, Lei, Y., additional, Levichev, E., additional, Li, C. H., additional, Li, C., additional, Li, D. Y., additional, Li, F., additional, Li, G., additional, Li, H. B., additional, Li, H., additional, Li, H. N., additional, Li, H. J., additional, Li, H. L., additional, Li, J. M., additional, Li, J., additional, Li, L., additional, Li, L. Y., additional, Li, N., additional, Li, P. R., additional, Li, R. H., additional, Li, S., additional, Li, T., additional, Li, W. J., additional, Li, X., additional, Li, X. H., additional, Li, X. Q., additional, Li, Y., additional, Li, Y. Y., additional, Li, Z. 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Published
2023
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8. A Direct Approach to Achieving Maximum Power Conversion in Wind Power Generation Systems

Author

Song, Y. D., Yin, X. H., Lebby, Gary, Weng, Liguo, Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Nierstrasz, Oscar, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Sudan, Madhu, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Vardi, Moshe Y., Series editor, Weikum, Gerhard, Series editor, Yu, Wen, editor, He, Haibo, editor, and Zhang, Nian, editor

Published
2009
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15. Development and preliminary test of a space-resolved vacuum-ultraviolet spectroscopy in EAST

Author

He, L., primary, Zhang, H. M., additional, Lyu, B., additional, Shen, Y. C., additional, Li, C. Y., additional, Yang, W. C., additional, Fu, J., additional, Du, X. W., additional, Wang, F. D., additional, Wang, Q. P., additional, Yin, X. H., additional, Wan, S. K., additional, Bin, B., additional, Li, Y. C., additional, Dai, S. Y., additional, and Liu, B., additional

Published
2021
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23. Denitrosylation of nNOS induced by cerebral ischemia-reperfusion contributes to nitrosylation of CaMKII and its inhibition of autophosphorylation in hippocampal CA1.

Author

ZHANG, T.-Y., YU, L.-M., YIN, X.-H., YANG, Q., LU, F., YAN, J.-Z., and LI, C.

Abstract

OBJECTIVE: The aim of this study is to investigate the relation between CaMKII S-nitrosylation and its activation, as well as the underlying mechanism, after global cerebral ischemia-reperfusion. MATERIALS AND METHODS: The rat model of cerebral ischemia-reperfusion was established by four-vessel occlusion of 15 min and reperfusion of different times. nNOS inhibitor 7-nitroindazole (7-NI), exogenous nitric oxide donor GSNO (nitrosoglutathione), or N-methyl-D-aspartate receptor (NMDAR) antagonist MK-801 were administered before ischemia. The expressions of S-nitrosylation and phosphorylation of CaMKII and nNOS were detected by biotin switch assay, immunoblotting, and immunohistochemical staining after cerebral ischemia-reperfusion. The survival of hippocampal CA1 pyramidal cells after administration of the three drugs was examined by cresyl violet staining. RESULTS: Following cerebral ischemia-reperfusion, the S-nitrosylation of CaMKII was increased, accompanied by a decrease of phosphorylation, suggesting a decrease of activity (p<0.05). Meanwhile, the phosphorylation and S-nitrosylation of nNOS were notably decreased at the same time point (p<0.05). The administration of 7-NI, GSNO, and MK-801 increased the S-nitrosylation and phosphorylation of nNOS, leading to the attenuation of increased S-nitrosylation and decreased autophosphorylation of CaMKII after cerebral ischemia-reperfusion (p<0.05). Administration of MK-801, GSNO, and 7-NI significantly decreased the neuronal damage in rat hippocampal CA1 caused by cerebral ischemia-reperfusion (p<0.05). CONCLUSIONS: After cerebral ischemia-reperfusion, the decrease of autophosphorylation of CaMKII regulated by its S-nitrosylation may be due to the denitrosylation of nNOS and subsequent NO production. Increasing the phosphorylation of CaMKII by nNOS inhibitor, exogenous NO donor or NMDA receptor antagonist exerted neuroprotective effects against cerebral ischemia-reperfusion injury. [ABSTRACT FROM AUTHOR]

Published
2019

24. Improved spatial calibration for the CXRS system on EAST

Author

Yin, X. H., primary, Li, Y. Y., additional, Fu, J., additional, Jiang, D., additional, Feng, S. Y., additional, Gu, Y. Q., additional, Cheng, Y., additional, Lyu, B., additional, Shi, Y. J., additional, Ye, M. Y., additional, and Wan, B. N., additional

Published
2016
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40. Comparison of regeneration frequency of green plantlets from in vitro culture of young panicles of wild rice

Author

Tan, G. X., Yin, X. H., Shu, L. H., He, G. C., and Liao, L. J.

Subjects
Genes, In vitro, Culture, Wild relatives, Panicles, Plant regeneration
Abstract

This article 'Comparison of regeneration frequency of green plantlets from in vitro culture of young panicles of wild rice' appeared in the International Rice Research Notes series, created by the International Rice Research Institute (IRRI) to expedite communication among scientists concerned with the development of improved technology for rice and rice-based systems. The series is a mechanism to help scientists keep each other informed of current rice research findings. The concise scientific notes are meant to encourage rice scientists to communicate with one another to obtain details on the research reported.

Published
1997
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44. INVOLVEMENT OF PERIPHERAL BETA-ENDORPHIN AND MU, DELTA, KAPPA OPIOID RECEPTORS IN ELECTROACUPUNCTURE ANALGESIA FOR PROLONGED INFLAMMATORY PAIN OF RATS.

Author

FANG, J. Q., JIANG, Y. L., QIU, S. C., HE, X. F., HUANG, L., SHEN, Y. F., and YIN, X. H.

Subjects
ELECTROACUPUNCTURE, ENDORPHINS, OPIOID receptors, IMMUNOHISTOCHEMISTRY, LABORATORY rats, ADRENOCORTICOTROPIC hormone, NALOXONE
Abstract

Acupuncture is commonly used to relieve chronic pain worldwide. Accumulating evidence shows that peripheral opioid system plays an important role in inhibiting inflammatory pain. This study aimed to investigate the involvement of peripheral opioid system in electroacupuncture (EA) analgesia for prolonged inflammatory pain. Inflammatory pain was induced by an intraplantar injection of complete Freund's adjuvant (CFA) into the right hind paw. EA (2/100 Hz, 2 mA) was applied to the ipsilateral Zusanli (ST36) and Kunlun (BL 60) acupoints for 30 min once everyday. Block studies on EA analgesia were performed on day 18 after CFA injection by using a-helical corticotrophin-releasing factor (CRF), a CRF antagonist, and naloxone methiodide, a peripherally restricted opioid receptor antagonist. Paw withdrawal latency (PWL) to a noxious thermal stimulus was measured as the pain behavioral change. Radioimmunoassay for beta-endorphin (beta-END), Met-enkephalin (Met-ENK), and dynorphin A (DYN A) in paw inflammatory tissue and immunohistochemistry study for mu, delta, kappa opioid receptors in dorsal root ganglion (DRG) were carried out. A subsequent validation experiment by locally delivered exogenous beta-END was also performed. We found that EA significantly increased the PWL of rats injected with CFA from day 4 to day 18. Locally administered a-helical CRF or naloxone blocked EA-produced analgesia. EA increased beta-END level in the paw inflammatory tissues, while CFA raised the local levels of Met-ENK and DYN A. The increased beta-END level by EA was fully reversed by a-helical CRF. Intraplantar injection of exogenous beta-END alleviated prolonged inflammatory pain. EA also up-regulated the expressions of mu, delta, kappa opioid receptors in rat L5 DRG. In conclusion, peripheral local beta-END and three subtypes of opioid receptors may be involved in EA analgesia for prolonged inflammatory pain. [ABSTRACT FROM AUTHOR]

Published
2013
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45. Laser Surface Alloying of an AZ91D Mg Alloy with Al+Y2O3 Powder.

Author

Bao, Q.-H., Zhao, K., Liu, J.-K., and Yin, X.-H.

Subjects
MAGNESIUM alloys, POWDER metallurgy, ALLOYS, CORROSION resistant materials, X-ray diffractometers, SCANNING electron microscopy, X-ray spectroscopy, MICROSTRUCTURE, MICROHARDNESS
Abstract

An Al-Y2O3 alloy coating was prepared on an AZ91D Mg alloy by means of CO2 laser alloying. X-ray diffraction (XRD), scanning electron micros- copy (SEM) and energy dispersive spectroscopy (EDS) were used to analyse the microstructures, micro-hardness, wear resistance and corrosion resistance of the resulting alloyed layer. The results showed that the hardness, wear and corrosion resistance of alloyed layer were higher than that of AZ91D Mg substrate. [ABSTRACT FROM AUTHOR]

Published
2010

46. Diffusion bonding of Ti3AlC2 ceramic via a Si interlayer.

Author

Yin, X. H., Li, M. S., Li, T. P., and Zhou, Y. C.

Subjects
*DIFFUSION bonding (Metals), *TITANIUM, *ALUMINUM, *CARBON, *SILICON, *SOLID solutions, *INTERFACES (Physical sciences), *SURFACE chemistry
Abstract

Based on the structure characteristic of Ti3AlC2 and the easy formation of Ti3Al1 − x Si x C2 solid solution, a Si interlayer was selected to join Ti3AlC2 layered ceramic by diffusion bonding method. Joining was performed at 1,300–1,400 °C for 120 min under 5 MPa load in an Ar atmosphere. The phase composition and interface microstructure of the joints were investigated by XRD, SEM and EPMA. The results revealed that Ti3Al(Si)C2 solid solution formed at the interface. The mechanism of bonding is attributed to silicon diffusing inward the Ti3AlC2. The strength of joints was evaluated by a 3-point bending test. The jointed specimens exhibit a high flexural strength of 285 ± 11 MPa, which is about 80% of that of the Ti3AlC2; and retain this strength up to 1,000 °C. The high mechanical performance of the joints indicates that diffusion bonding via a Si interlayer is effective to bond Ti3AlC2 ceramic. [ABSTRACT FROM AUTHOR]

Published
2007
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47. Microstructure and mechanical strength of diffusion-bonded Ti3SiC2/Ni joints.

Author

Yin, X. H., Li, M. S., and Zhou, Y. C.

Subjects
MICROSTRUCTURE, DIFFUSION, TITANIUM, SILICON, NICKEL, SCANNING electron microscopy, ELECTRON probe microanalysis, SHEAR (Mechanics)
Abstract

Diffusion bonding of Ti3SiC2 and nickel has been conducted at temperatures of 800 °C-1100 °C for 10-90 min under 6-20 MPa in a vacuum. The phase composition and microstructure of the joints were investigated by X-ray diffraction, scanning electron microscopy, and electron probe microanalysis. The total diffusion path of the joining is determined to be Ni/Ni31Si12 + Ni16Ti6Si7 + TiCx/Ti3SiC2 + Ti2Ni + TiCx/ Ti3SiC2. The growth of the reaction layer follows parabolic law, and the temperature dependence of the reaction constant, k, can be expressed as k = 1.68 x 10-4 exp(-118 ± 12 kJ/RT) m/s 1/2. The diffusion of nickel through the reaction zone toward Ti3SiC2 is the main controlling step in the bonding process. Joint strengths were determined through shear tests. The maximum shear strength of 121 ± 7 MPa, which is close to the shear strength of Ti3SiC2, has been obtained under the condition of 1000 °C for 10 min under 20 MPa. [ABSTRACT FROM AUTHOR]

Published
2006
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