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Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the conventional SiGe photodetectors, supporting silicon-integrated on-chip photodetection in new wavelength bands beyond 1.6 microns (e.g., U-band and 2 microns). Here we realize a silicon-integrated four-channel wavelength division multiplexing (WDM) optical receiver based on a micro-ring resonator (MRR) array and four p-n homojunction GPDs. These GPDs based on the photo-thermoelectric (PTE) effect operating under zero (current) bias exhibit responsivities of about 1.1 V/W and flat frequency responses up to 67 GHz which is set-up limited. The GPDs show good consistence benefiting from the compact active region array (0.006 mm^2) covered by a single mechanically exfoliated hBN/graphene/hBN stack. Moreover, the WDM graphene optical receiver realized the 4 x 16 Gbps non-return to zero (NRZ) optical signal transmission. To the best of our knowledge, it is the first GPD-array-based optical receiver using high-quality mechanically exfoliated graphene and edge graphene-metal conduct with low resistance. Apparently, our design is also compatible with CVD-grown graphene, which can also result in a good consistence of the GPDs. This work shed light on the large-scale integration of GPDs with high consistency and uniformity, enabling the application of high-quality mechanically exfoliated graphene, and promoting the development of the graphene photonic integrated circuits.

Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.

Increasing attention on microwave ultra-broadband metamaterial absorbers has been paid due to their promising applications. While most microwave ultra-broadband metamaterial absorbers developed so far are based on metallic resonant structures, dispersive dielectric water-based metamaterial opens a simpler and more versatile route for the construction of polarization- and angle- insensitive ultra-broadband absorption. Here, we review the recent progresses of water-based metamaterial absorber by providing an illustration of the mechanisms to realize ultra-broadband, tunable and multi-functional absorption. We also address the further development direction and some potential novel applications., Comment: 28 pages, 11 figures

Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric response materials. The rise of two-dimensional (2D) materials, thanks to their distinct electronic structure, extreme dimensional confinement and strong light-matter interactions, provides new material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which is rare to meet at the same time for all existing 2D materials, either graphene, transition metal dichalcogenide or black phosphorous. Herein we demonstrate a new infrared photodetector based on 2D Bi2O2Se crystals, whose main characteristics are superb in the whole 2D family: high sensitivity of ~65 A/W at 1200 nm and ultrafast intrinsic photoresponse of ~1 ps at room temperature. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of 2D oxyselenide. With additional merits of mass production, excellent stability and flexibility, 2D oxyselenide detectors should open new avenues in highly-sensitive, high-speed, low-cost, flexible infrared photodetection and imaging.

We report a high performance relative humidity (RH) microsensor by coating a few-layer graphene oxide (GO) flake over a photonic crystal (PC) cavity. Since the GO layer has a high water-activity and interacts with the evanescent cavity mode strongly, the exposure of GO-PC cavity in varied humidity levels results in significant resonant wavelength shifts, showing a slope of 0.68 nm/%RH in the range of 60%-85% RH. By interrogating the power variation of the cavity reflection, the microsensor presents an ultrahigh sensitivity exceeding 3.9 dB/%RH. Relying on the unimpeded permeation of water molecules through the GO interlayers and microscale distribution of the cavity mode, the integrated sensor has a response time less than 100 ms, which promises successful measurements of human breathing. Combining with the ease of fabrication, this high performance RH sensor has potential applications requiring optical access, device compactness, and fast dynamic response., Comment: 9 pages, 3 figures