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Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices 1-4. To date, integer Chern insulators have been experimentally demonstrated in several systems at zero magnetic field 3, 5-11, but fractional Chern insulators have been reported only in graphene-based systems under a finite magnetic field 12, 13. The emergence of semiconductor moiré materials 14, 15, which support tunable topological flat bands 16, 17, opens a new opportunity to realize fractional Chern insulators 18-20. Here, we report the observation of both integer and fractional Chern insulators at zero magnetic field in small-angle twisted bilayer MoTe2 by combining the local electronic compressibility and magneto-optical measurements. At hole filling factor v= 1 and 2/3, the system is incompressible and spontaneously breaks time reversal symmetry. We determine the Chern number to be 1 and 2/3 for the v=1 and v=2/3 gaps, respectively, from their dispersion in filling factor with applied magnetic field using the Streda formula. We further demonstrate electric-field-tuned topological phase transitions involving the Chern insulators. Our findings pave the way for demonstration of quantized fractional Hall conductance and anyonic excitation and braiding 21 in semiconductor moiré materials.

Electroactive macrocycle building blocks are a promising route to new types of functional two-dimensional porous organic frameworks. Our strategy uses conjugated macrocycles that organize into two dimensional porous sheets via non-covalent van der Waals interactions, to make ultrathin films that are just one molecule thick. In bulk, these two-dimensional (2D) sheets stack into a three-dimensional van der Waals crystal, where relatively weak alkyl–alkyl interactions constitute the interface between these sheets. With the liquid-phase exfoliation, we are able to obtain films as thin as two molecular layers. Further using a combination of liquid-phase and mechanical exfoliation, we are able to create non-covalent sheets over a large area (>100 μm2). The ultrathin porous films maintain the single crystal packing from the macrocyclic structure and are electrically conductive. We demonstrate that this new type of 2D non-covalent porous organic framework can be used as the active layer in a field effect transistor device with graphene source and drain contacts along with hexagonal boron nitride as the gate dielectric interface., Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.

Strongly correlated bosons in a lattice are a platform to realize rich bosonic states of matter and quantum phase transitions. While strongly correlated bosons in a lattice have been studied in cold-atom experiments, their realization in a solid-state system has remained challenging. Here we trap interlayer excitons--bosons composed of bound electron-hole pairs--in a lattice provided by an angle-aligned WS2/bilayer WSe2/WS2 multilayer; the heterostructure supports Coulomb-coupled triangular moiré lattices of nearly identical period at the top and bottom interfaces. We observe correlated insulating states when the combined electron filling factor of the two lattices, with arbitrary partitions, equals to 1/3,2/3,4/3 and 5/3. These new states can be interpreted as exciton density waves in a Bose-Fermi mixture of excitons and holes. Because of the strong repulsive interactions between the constituents, the holes form robust generalized Wigner crystals, which restrict the exciton fluid to channels that spontaneously break the translational symmetry of the lattice. Our results demonstrate that Coulomb-coupled moiré lattices are fertile ground for correlated many-boson phenomena.

Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.

This paper selects Shanghai and Shenzhen A-share companies from 2011 to 2020 as research samples to explore the impact of digital transformation on enterprise market risk and its mechanism.The results show that digital transformation can effectively reduce the market risks faced by enterprises. Mechanism test shows that digitalization reduces enterprise risks by improving enterprise total factor productivity and alleviating financing constraints, and production efficiency and financing constraints play a part of the intermediary effect.The conclusion of this paper has certain reference significance for boosting the confidence of enterprises in digitalization and reducing the market risk of enterprises.

Heterostructures of vertically stacked graphene double layers, separated by a thin tunnel barrier, provide a highly tunable system to explore strongly interacting electron states. This is because the interlayer Coulomb interactions can be sensitively tuned simply by varying the barrier thickness. Recent studies of double-layer graphene have shown that, in the quantum Hall effect regime, strong interlayer coupling can induce electron–hole pairing across the two layers, resulting in a superfluid phase of interlayer excitons1–3. Here, we report a series of emergent fractional quantum Hall effect (FQHE) states appearing under similar conditions. We find excellent agreement between the sequence of observable FQHE states and the theoretically proposed two-component composite-fermion (CF) model, where the CF quasiparticle construction results from both interlayer and intralayer interactions4,5. Most remarkably, we observe an additional series of incompressible states at fractional filling that do not fit within either the single- or two-component CF models. We interpret these states to result from residual pairing interactions between CFs, representing a new type of correlated ground state that is unique to graphene double-layer structures and not described by the conventional CF model. It is shown that composite fermions in the fractional quantum Hall regime form paired states in double-layer graphene. Pairing between layers gives a phase similar to an exciton condensate and pairing within a layer may lead to non-abelian states.

The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded the concept of topological order in physics bringing into focus the intimate relation between the “bulk” topology and the edge states. The QH effect in graphene is distinguished by its four-fold degenerate zero energy Landau level (zLL), where the symmetry is broken by electron interactions on top of lattice-scale potentials. However, the broken-symmetry edge states have eluded spatial measurements. In this article, we spatially map the quantum Hall broken-symmetry edge states comprising the graphene zLL at integer filling factors of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\nu }}={{0}},\pm {{1}}$$\end{document}ν=0,±1 across the quantum Hall edge boundary using high-resolution atomic force microscopy (AFM) and show a gapped ground state proceeding from the bulk through to the QH edge boundary. Measurements of the chemical potential resolve the energies of the four-fold degenerate zLL as a function of magnetic field and show the interplay of the moiré superlattice potential of the graphene/boron nitride system and spin/valley symmetry-breaking effects in large magnetic fields., The broken-symmetry edge states that are the hallmark of the quantum Hall effect in graphene have eluded spatial measurements. Here, the authors spatially map the quantum Hall broken-symmetry edge states using atomic force microscopy and show a gapped ground state proceeding from the bulk through to the quantum Hall edge boundary.

Moiré superlattices in van der Waals heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. Indeed, electrons in these structures have been recently found to exhibit a number of emergent properties that the individual layers themselves do not exhibit. This includes superconductivity1,2, magnetism3, topological edge states4,5, exciton trapping6 and correlated insulator phases7. However, the lack of a straightforward technique to characterize the local structure of moiré superlattices has thus far impeded progress in the field. In this work we describe a simple, room-temperature, ambient method to visualize real-space moiré superlattices with sub-5-nm spatial resolution in a variety of twisted van der Waals heterostructures including, but not limited to, conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method uses piezoresponse force microscopy, an atomic force microscope modality that locally measures electromechanical surface deformation. We find that all moiré superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moiré superlattices. Therefore, moiré superlattices of two-dimensional materials manifest themselves as an interlinked network of polarized domain walls in a non-polar background matrix., This work is supported by the Programmable Quantum Materials (Pro-QM) programme at Columbia University, an Energy Frontier Research Center established by the Department of Energy (grant no. DE-SC0019443). L.J.M. acknowledges support from the Swiss National Science Foundation (grant no. P400P2_186744). Synthesis of MoSe2 and WSe2 was supported by the National Science Foundation Materials Research Science and Engineering Centers programme through Columbia in the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). The Flatiron Institute is a division of the Simons Foundation. C.E.D. acknowledges support from the National Science Foundation under grant no. DMR-1918455. M.S. and K.S. acknowledge the support of the European Research Council under the European Union’s Horizon 2020 research and innovation programme (grant agreement no. 724529), Ministerio de Economia, Industria y Competitividad through grant nos. MAT2016-77100-C2-2-P and SEV-2015-0496, and the Generalitat de Catalunya (grant no. 2017SGR 1506). We thank D. Griffin and T. Walsh from Oxford Instruments Asylum Research for confirmation of PFM results.

The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum Hall effect (FQHE) regime, the unique Landau level spectrum of BLG is anticipated to support a non-Abelian even-denominator state that is tunable by both electric and magnetic fields. However, observation of this state, which is anticipated to be stronger than in conventional systems, has been conspicuously difficult. Here we report transport measurements of a robust even denominator FQHE in high-mobility, dual gated BLG devices. We confirm that the stability of the energy gap can be sensitively tuned and map the phase diagram. Our results establish BLG as a dynamic new platform to study topological ground states with possible non-Abelian excitations., Comment: 6 pages, 4 figures. v2, a typo has been corrected

International audience; Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the ν = 0 insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation together with a dual-graphite gate structure. Bulk conductance measurement in the quantum Hall effect (QHE) regime outperforms previously reported Hall bar measurements, with improved resolution observed for both the integer and fractional QHE states. We identify apparent phase transitions in the fractional sequence in both the lowest and first excited Landau levels (LLs) and observed features consistent with electron solid phases in higher LLs., 7 pages, 4 figures and 39 references

A method was developed for quantifying 17 amino acids in tobacco leaves by using an A300 amino acid analyzer and chemometric resolution. In the method, amino acids were eluted by the buffer solution on an ion-exchange column. After reacting with ninhydrin, the derivatives of amino acids were detected by ultraviolet detection. Most amino acids are separated by the elution program. However, five peaks of the derivatives are still overlapping. A non-negative immune algorithm was employed to extract the profiles of the derivatives from the overlapping signals, and then peak areas were adopted for quantitative analysis of the amino acids. The method was validated by the determination of amino acids in tobacco leaves. The relative standard deviations (n = 5) are all less than 2.54% and the recoveries of the spiked samples are in a range of 94.62–108.21%. The feasibility of the method was proved by analyzing the 17 amino acids in 30 tobacco leaf samples.

Layer-by-layer assembly of graphene has been proven to be an effective way to improve its mechanical properties, but its fracture mechanism, which is crucial for practical device applications, is still not clear and has not been fully studied yet. By consecutive stacking of two graphene monolayers, we fabricate two-layer stacked graphene membranes with a clean interface between the two layers. Fracture behavior of the two-layer stacked graphene membranes is studied using nanoindentation performed by atomic force microscopy. It is found that the fracture force distribution of stacked graphene is very different from that of monolayer graphene. Weibull statistics of fracture forces show that after layer-by-layer stacking of graphene, the membrane becomes less sensitive to the defects during nanoindentation, improving the overall performance of the graphene membranes. Interestingly, a third of our tested membranes show a stepwise fracture, which could serve as a warning message for the mechanical failure of multilayer graphene devices. Our study provides insight into the fracture mechanism of multilayer graphene membranes.