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One band switchable low noise amplifier (LNA) is designed for wideband applications. The proposed band switchable LNA has two switchable bands. The design consists of a input matching circuit, two cascode common-source amplifiers and an output buffer for measurement. The proposed LNA is designed with two switching capacitors as loading that use NMOS to make high quality factor. The proposed LNA gives switchable gains of 10.8dB and 16.8dB, and noise figure of 3.6–6.2dB and 3.1–6.5dB at 3.255.6GHz and 6–10.4GHz frequency band, respectively, while consuming 22.46mW through a 1.8V power supply using the TSMC 0.18µm CMOS technology.

A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18um RF CMOS process. The trade off on noise figure and chip area in low-noise amplifier design is discussed. The two LNA (LC and Res) gives 14.5 dB gain; 7.2 GHz and 7.0 GHz 3 dB bandwidth (3.1-10.3 GHz and 3.1- 10.1 GHz) while consuming 22.8 mW and 23.8 mW through a 1.5 V supply. Over the 3.1 GHz - 10.3 GHz and 3.1 GHz- 10.1 GHz frequency band, a minimum noise figure of 2.6 dB and 6.3 dB and input return loss lower than -8.8 dB and - 6.8 dB have been achieved.

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18 um RF CMOS process. The LNA gives 13.1 dB gain; 9.1 GHz 3 dB bandwidth (3.1-12.2 GHz) while consuming 13.9 mW through a 1.8 V supply. Over the 3.1 GHz - 10.6 GHz frequency band, a minimum noise figure of 2.7 dB and input return loss lower than -8.7 dB have been achieved.

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2nd-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18 mum standard RF CMOS process. The LNA gives 13.1 dB maximum power gain between 3.0 GHz-4.9 GHz and 15.5 dB maximum power gain between 6.2 GHz-10.2 GHz while consuming 21.9 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.2 GHz-10.2 GHz, a minimum noise figure is 2.5 dB and 2.8 dB. Input return loss lower than -6.4dB in all bandwidth have been achieved.

This paper presents a common gate low-power low noise amplifier (LNA) for DS-UWB low-band and MB-OFDM group-A ultra-wideband radio system. The LNA is designed and implemented in 0.18 mum RF CMOS process. Simulation results show that power gain of 15.4 dB, input and output matching lower than -10.6 dB and -13.3 dB, and a minimum NF of 3.8 dB can be achieved, while the power consumption is only 3.24 mW through 1.8 V power supply