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48 results on '"Yeh, Yu-Hsuan"'

2. BiFuse++: Self-supervised and Efficient Bi-projection Fusion for 360 Depth Estimation

Author

Wang, Fu-En, Yeh, Yu-Hsuan, Tsai, Yi-Hsuan, Chiu, Wei-Chen, and Sun, Min

Subjects
Computer Science - Computer Vision and Pattern Recognition
Abstract

Due to the rise of spherical cameras, monocular 360 depth estimation becomes an important technique for many applications (e.g., autonomous systems). Thus, state-of-the-art frameworks for monocular 360 depth estimation such as bi-projection fusion in BiFuse are proposed. To train such a framework, a large number of panoramas along with the corresponding depth ground truths captured by laser sensors are required, which highly increases the cost of data collection. Moreover, since such a data collection procedure is time-consuming, the scalability of extending these methods to different scenes becomes a challenge. To this end, self-training a network for monocular depth estimation from 360 videos is one way to alleviate this issue. However, there are no existing frameworks that incorporate bi-projection fusion into the self-training scheme, which highly limits the self-supervised performance since bi-projection fusion can leverage information from different projection types. In this paper, we propose BiFuse++ to explore the combination of bi-projection fusion and the self-training scenario. To be specific, we propose a new fusion module and Contrast-Aware Photometric Loss to improve the performance of BiFuse and increase the stability of self-training on real-world videos. We conduct both supervised and self-supervised experiments on benchmark datasets and achieve state-of-the-art performance., Comment: Accepted in TPAMI 2022; Code: https://github.com/fuenwang/BiFusev2

Published
2022
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3. LED2-Net: Monocular 360 Layout Estimation via Differentiable Depth Rendering

Author

Wang, Fu-En, Yeh, Yu-Hsuan, Sun, Min, Chiu, Wei-Chen, and Tsai, Yi-Hsuan

Subjects
Computer Science - Computer Vision and Pattern Recognition
Abstract

Although significant progress has been made in room layout estimation, most methods aim to reduce the loss in the 2D pixel coordinate rather than exploiting the room structure in the 3D space. Towards reconstructing the room layout in 3D, we formulate the task of 360 layout estimation as a problem of predicting depth on the horizon line of a panorama. Specifically, we propose the Differentiable Depth Rendering procedure to make the conversion from layout to depth prediction differentiable, thus making our proposed model end-to-end trainable while leveraging the 3D geometric information, without the need of providing the ground truth depth. Our method achieves state-of-the-art performance on numerous 360 layout benchmark datasets. Moreover, our formulation enables a pre-training step on the depth dataset, which further improves the generalizability of our layout estimation model., Comment: CVPR 2021 Oral, see https://fuenwang.ml/project/led2net

Published
2021

5. LayoutMP3D: Layout Annotation of Matterport3D

Author

Wang, Fu-En, Yeh, Yu-Hsuan, Sun, Min, Chiu, Wei-Chen, and Tsai, Yi-Hsuan

Subjects
Computer Science - Computer Vision and Pattern Recognition
Abstract

Inferring the information of 3D layout from a single equirectangular panorama is crucial for numerous applications of virtual reality or robotics (e.g., scene understanding and navigation). To achieve this, several datasets are collected for the task of 360 layout estimation. To facilitate the learning algorithms for autonomous systems in indoor scenarios, we consider the Matterport3D dataset with their originally provided depth map ground truths and further release our annotations for layout ground truths from a subset of Matterport3D. As Matterport3D contains accurate depth ground truths from time-of-flight (ToF) sensors, our dataset provides both the layout and depth information, which enables the opportunity to explore the environment by integrating both cues., Comment: Annotation is available at https://github.com/fuenwang/LayoutMP3D

Published
2020

7. Impact of deposition temperature on electrical properties of HZO-based FeRAM.

Author

Yeh, Yu-Hsuan, Tan, Yung-Fang, Huang, Yen-Che, Lin, Chao Cheng, Wu, Chung-Wei, Zhang, Yong-Ci, Lee, Ya-Huan, Chang, Ting-Chang, and Sze, Simon M.

Subjects
*PHASE transitions, *RANDOM access memory, *STRAY currents, *TEMPERATURE, *RELIABILITY in engineering
Abstract

This study presents a comprehensive investigation of the impact of the deposition temperature on the HfxZr1−xO2 (HZO) ferroelectric layer of ferroelectric random access memory with TaN electrodes. This investigation mainly focuses on its electrical characteristics and compares the differences. It is revealed that the deposition temperature plays a crucial role in determining the crystal structure of HZO, which can exhibit a combination of tetragonal and orthorhombic phases or exist solely in one of the two phases. Furthermore, the grain size of HZO varies with the deposition temperature. These findings correspond well to the electrical measurement results, including leakage current, polarization, capacitance, and reliability tests. The study tracks the phase transition process during the operation of switching cycles when the phase transition process can be monitored as well. To better understand the observed differences, physical models that shed light on the underlying mechanisms affected by deposition temperature are proposed at the end of the article. [ABSTRACT FROM AUTHOR]

Published
2024
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10. Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation.

Author

Wu, Chung-Wei, Chen, Po-Hsun, Chang, Ting-Chang, Tan, Yung-Fang, Lin, Shih-Kai, Yeh, Yu-Hsuan, Zhang, Yong-Ci, Lin, Hsin-Ni, Chang, Kai-Chun, Yeh, Chien-Hung, and Sze, Simon

Subjects
PHASE transitions, X-rays, CURRENT-voltage curves, RF values (Chromatography), STRAY currents, IRRADIATION
Abstract

In this study, electrical measurements on ferroelectric random-access memory by prior x-ray irradiation are conducted. Compared with an unirradiated device, parameters such as current leakage and remnant polarization of the irradiated device were unexpectedly improved. Besides, better reliabilities including the number of endurance times and retention time have also been demonstrated. To clarify the underlying physical mechanism, the electrical properties are analyzed. The current–voltage curve (I–V) implies a change in the grain size in the ferroelectric layer (FL), and the capacitance–voltage curve (C – V) profile indicates that the FL undergoes a phase change during irradiation. Finally, according to the electrical results, a physical model is proposed as an explanation. [ABSTRACT FROM AUTHOR]

Published
2024
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15. The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Author

Lee, Ya-Huan, Chang, Kai-Chun, Tai, Mao-Chou, Wang, Yu-Xuan, Lin, Hsin-Ni, Yeh, Yu-Hsuan, Kuo, Hung-Ming, Tsai, Xin-Ying, Lee, Jason, Huang, I-Yu, Chang, Ting-Chang, and Sze, Simon

Abstract

In this study, the reliability issues are discussed under dc and ac negative gate bias stress (ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). Converse degradation between these two stress conditions is discovered. The holes generated by trap-assisted thermionic field emission (TA-TFE) are trapped into the Al2O3 layer, so that the threshold voltage ( ${V}_{\text {th}}$ ) decreases under dc negative gate bias stress (dc-NGBS). ${V}_{\text {th}}$ increases because of the hot electrons injected into the GaN layer, while the device is turned on quickly under ac-NGBS. In addition, the degradation mechanisms under dc-NGBS and ac-NGBS are confirmed by the OFF-state gate and drain leakages, respectively. Silvaco TCAD is used to validate the degradation mechanism under ac-NGBS. Finally, the characteristics of the ${V}_{\text {th}}$ shift transition from dc to ac NGBS are discussed.

Published
2024
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19. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)

Author

Lin, Hsin-Ni, primary, Chang, Ting-Chang, additional, Chen, Wen-Chung, additional, Tan, Yung-Fang, additional, Chang, Kai-Chun, additional, Lin, Shih-Kai, additional, Yeh, Yu-Hsuan, additional, Wu, Chung-Wei, additional, Zhang, Yong-Ci, additional, Yeh, Chien-Hung, additional, Lee, Ya-Huan, additional, and Huang, Jen-Wei, additional

Published
2022
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25. Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Author

Chen, Wen-Chung, primary, Tan, Yung-Fang, additional, Lin, Shih-Kai, additional, Zhang, Yong-Ci, additional, Chang, Kai-Chun, additional, Lin, Yun-Hsuan, additional, Yeh, Chien-Hung, additional, Wu, Chung-Wei, additional, Yeh, Yu-Hsuan, additional, Wang, Kao-Yuan, additional, Huang, Hui-Chun, additional, Tsai, Tsung-Ming, additional, Huang, Jen-Wei, additional, and Chang, Ting-Chang, additional

Published
2021
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28. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors

Author

Yeh, Yu-Hsuan, primary, Chang, Ting-Chang, additional, Huang, Wei-Chen, additional, Zheng, Hao-Xuan, additional, Tsao, Yu-Ching, additional, Ciou, Fong-Min, additional, Lin, Yu-Shan, additional, Tan, Yung-Fang, additional, Sun, Li-Chuan, additional, Zhou, Kuan-Ju, additional, Chen, Kuan-Hsu, additional, and Huang, Jen-Wei, additional

Published
2021
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29. Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.

Author

Wu, Pei-Yu, Tsai, Xin-Ying, Chang, Ting-Chang, Yeh, Yu-Hsuan, Huang, Wei-Chen, Chang, Kai-Chun, Tsai, Tsung-Ming, and Huang, Jen-Wei

Subjects
MODULATION-doped field-effect transistors, ALUMINUM oxide, INDIUM gallium zinc oxide, IMPACT ionization, WIDE gap semiconductors, GALLIUM nitride, METAL insulator semiconductors
Abstract

As a transmitter power amplifier (PA), the electrical output characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs) are closely related to the drain current versus drain voltage (${I}_{d}$ – ${V}_{d}$) characteristics. Any abnormalities in the ${I}_{d}$ – ${V}_{d}$ characteristics will seriously affect device performance. Therefore, many groups have investigated the kink effect of GaN HEMTs. One of the commonly used measurement methods of the kink effect is the ${I}_{d}$ – ${V}_{d}$ forward and reverse sweep. In this study, we used the same method for Al2O3/Si3N4–AlGaN/GaN metal–insulator–semiconductor HEMT (MIS HEMT) devices. We found that not only did the kink effect occurred but ${I}_{d}$ also increased abnormally during the reverse sweep and after a series of electrical measurements. At the end of the forward sweep, impact ionization caused by a high ${V}_{d}$ generated electron–hole pairs and some holes accumulated under the gate region, which caused the negative shift of the threshold voltage (${V}_{\text{Th}}$), leading to an abnormal increase in ${I}_{d}$ during the reverse sweep. [ABSTRACT FROM AUTHOR]

Published
2022
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30. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

Author

Wu, Chung-Wei, primary, Lin, Chun-Chu, additional, Chen, Po-Hsun, additional, Chang, Ting-Chang, additional, Zhou, Kuan-Ju, additional, Chen, Wen-Chung, additional, Tan, Yung-Fang, additional, Yeh, Yu-Hsuan, additional, Chou, Sheng-Yao, additional, Huang, Hui-Chun, additional, Tsai, Tsung-Ming, additional, and Sze, Simon M., additional

Published
2021
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31. BiFuse++: Self-Supervised and Efficient Bi-Projection Fusion for 360° Depth Estimation

Author

Wang, Fu-En, Yeh, Yu-Hsuan, Tsai, Yi-Hsuan, Chiu, Wei-Chen, and Sun, Min

Abstract

Due to the rise of spherical cameras, monocular 360$^\circ$∘ depth estimation becomes an important technique for many applications (e.g., autonomous systems). Thus, state-of-the-art frameworks for monocular 360$^\circ$∘ depth estimation such as bi-projection fusion in BiFuse are proposed. To train such a framework, a large number of panoramas along with the corresponding depth ground truths captured by laser sensors are required, which highly increases the cost of data collection. Moreover, since such a data collection procedure is time-consuming, the scalability of extending these methods to different scenes becomes a challenge. To this end, self-training a network for monocular depth estimation from 360$^\circ$∘ videos is one way to alleviate this issue. However, there are no existing frameworks that incorporate bi-projection fusion into the self-training scheme, which highly limits the self-supervised performance since bi-projection fusion can leverage information from different projection types. In this paper, we propose BiFuse++ to explore the combination of bi-projection fusion and the self-training scenario. To be specific, we propose a new fusion module and Contrast-Aware Photometric Loss to improve the performance of BiFuse and increase the stability of self-training on real-world videos. We conduct both supervised and self-supervised experiments on benchmark datasets and achieve state-of-the-art performance.

Published
2023
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34. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Author

Huang, Wei‐Chen, primary, Zheng, Hao‐Xuan, additional, Chen, Po‐Hsun, additional, Chang, Ting‐Chang, additional, Tan, Yung‐Fang, additional, Lin, Shih‐Kai, additional, Zhang, Yong‐Ci, additional, Jin, Fu‐Yuan, additional, Wu, Chung‐Wei, additional, Yeh, Yu‐Hsuan, additional, Chou, Sheng‐Yao, additional, Huang, Hui‐Chun, additional, Chen, Yan‐Wen, additional, and Sze, Simon M., additional

Published
2020
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36. Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

Author

Zhou, Kuan-Ju, primary, Chang, Ting-Chang, additional, Lin, Chih-Yang, additional, Chen, Chun-Kuei, additional, Tseng, Yi-Ting, additional, Zheng, Hao-Xuan, additional, Chen, Hong-Chih, additional, Sun, Li-Chuan, additional, Lien, Chih-Ying, additional, Tan, Yung-Fang, additional, Wu, Chung-Wei, additional, Yeh, Yu-Hsuan, additional, and Sze, Simon M., additional

Published
2020
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38. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

Author

Lin, Chih-Yang, primary, Zhou, Kuan-Ju, additional, Chang, Ting-Chang, additional, Sun, Li-Chuan, additional, Tan, Yung-Fang, additional, Wu, Chung-Wei, additional, Yeh, Yu-Hsuan, additional, Chen, Wen-Chung, additional, Lin, Chun-Chu, additional, Huang, Wei-Chen, additional, Wu, Cheng-Hsien, additional, Lin, Shih-Kai, additional, Lin, Tzu-Heng, additional, Huang, Jen-Wei, additional, and Sze, Simon M., additional

Published
2020
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39. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM.

Author

Wu, Chung-Wei, Lin, Chun-Chu, Chen, Po-Hsun, Chang, Ting-Chang, Zhou, Kuan-Ju, Chen, Wen-Chung, Tan, Yung-Fang, Yeh, Yu-Hsuan, Chou, Sheng-Yao, Huang, Hui-Chun, Tsai, Tsung-Ming, and Sze, Simon M.

Abstract

In this work, Ag-doped HfO2-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament. [ABSTRACT FROM AUTHOR]

Published
2021
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40. Epithelial-mesenchymal transition (EMT) beyond EGFR mutations per se is a common mechanism for acquired resistance to EGFR TKI

Author

Weng, Chien-Hui, primary, Chen, Li-Yu, additional, Lin, Yu-Chin, additional, Shih, Jin-Yuan, additional, Lin, Yun-Chieh, additional, Tseng, Ruo-Yu, additional, Chiu, An-Chieh, additional, Yeh, Yu-Hsuan, additional, Liu, Chi, additional, Lin, Yi-Ting, additional, Fang, Jim-Min, additional, and Chen, Ching-Chow, additional

Published
2018
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43. Detection of toxigenic M1UKlineage group A Streptococcusclones in Taiwan

Author

Chiang-Ni, Chuan, Hsu, Chih-Yun, Yeh, Yu-Hsuan, Chi, Chia-Yu, Wang, Shuying, Tsai, Pei-Jane, and Chiu, Cheng-Hsun

Abstract

A new sublineage of emm1 group A Streptococcus(GAS), M1UK, has emerged in Europe, North America, and Australia. Notably, a significant portion of emm1 isolates in Asia, particularly in Hong Kong and mainland China, acquired scarlet fever-associated prophages following the 2011 Hong Kong scarlet fever outbreak. However, the presence of the M1UKsublineage has not yet been detected in Asia.

Published
2024
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47. Forming‐Free ZnO‐Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique.

Author

Chou, Sheng‐Yao, Chen, Po‐Hsun, Chen, Ming‐Chen, Chang, Ting‐Chang, Wang, Yu‐Bo, Tu, Hong‐Yi, Zhang, Yong‐Ci, Wu, Chung‐Wei, Yeh, Yu‐Hsuan, Tsai, Tsung‐Ming, Huang, Yu‐Ching, and Chen, Yi Huang

Subjects
*NONVOLATILE random-access memory, *ZINC oxide thin films, *SUPERCRITICAL fluids, *PHOTOELECTRON spectroscopy, *MATERIALS analysis, *RANDOM access memory
Abstract

Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future. [ABSTRACT FROM AUTHOR]

Published
2024
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48. A molecular toolkit for heterologous protein secretion across Bacteroides species.

Author

Yeh YH, Kelly VW, Pour RR, and Sirk SJ

Abstract

Bacteroides species are abundant and prevalent stably colonizing members of the human gut microbiota, making them a promising chassis for developing long-term interventions for chronic diseases. Engineering these bacteria as on-site production and delivery vehicles for biologic drugs or diagnostics, however, requires efficient heterologous protein secretion tools, which are currently lacking. To address this limitation, we systematically investigated methods to enable heterologous protein secretion in Bacteroides using both endogenous and exogenous secretion systems. Here, we report a collection of secretion carriers that can export functional proteins across multiple Bacteroides species at high titers. To understand the mechanistic drivers of Bacteroides secretion, we characterized signal peptide sequence features as well as post-secretion extracellular fate and cargo size limit of protein cargo. To increase titers and enable flexible control of protein secretion, we developed a strong, self-contained, inducible expression circuit. Finally, we validated the functionality of our secretion carriers in vivo in a mouse model. This toolkit should enable expanded development of long-term living therapeutic interventions for chronic gastrointestinal disease., Competing Interests: Declaration of interests Y.H.Y. and S.J.S. have filed a patent application on this work (PCT/US2023/083131). The authors declare no other competing interests.

Published
2023
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