22 results on '"Yeh, Bo-Liang"'
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2. P-55: High Resolution Display with ES and BCE-types of Oxide TFT Development
3. P-18: High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure
4. 63.4: High-Performance 4K x 2K 65-in. TV with BCE-Type Oxide TFTs
5. Initial time-dependent current growth phenomenon in n-type organic transistors induced by interfacial dipole effects
6. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
7. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
8. Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
9. Organic complementary inverters with polyimide films as the surface modification of dielectrics
10. 56.2: Investigating the IGZO‐TFT Performances Under Gate‐bias Stress With and Without Light Illumination for 4k2k 65‐inch Displays
11. Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors
12. P‐139L: Late‐News Poster: AC Gate‐Drain‐Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications
13. Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets
14. Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics
15. Analyses of Electrical Properties and Stability of Organic Complementary Transistors
16. Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors
17. Studies of organic complementary inverters with pentacene and PTCDI-C 13 H 27
18. Studies of organic complementary inverters with pentacene and PTCDI-C13H27.
19. High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure.
20. AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications.
21. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
22. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
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