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Main parameters of InGaAs/InAlAs multiple quantum well amplitude modulators, such as contrast ratio, insertion loss and chirp parameter, were calculated in order to find a quantum well structure which optimizes them. The parameters were estimated from the theoretical absorption curves, which were calculated for different values of applied reverse bias and were compared with experimental data. A study of the device parameters as a function of the Ga content and operation voltage was performed. The study showed that optimum values for the modulator parameters cannot be obtained simultaneously. The influence of the residual doping level and the applied pre-bias are emphasized.

We have studied doped superlattices of GaAs/AlGaAs composition. When the doping atoms are introduced into the barriers surrounding the superlattice, as well as to the inner ones, but with half of the concentration, the photoluminescence due to interband transitions from extended superlattice states is detected. This is demonstrated by a study of the sample´s photoluminescence in a magnetic field, whose intensity oscillates in concomitance with the SdH spectrum of electrons confined in the miniband.

Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.

The interfaces in InP=In0.53 Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of In xGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7±1 monolayers.

Lattice-matched InP/InxGa1- x As short period superlattices (x = 0.53) delta-doped with Si in the middle of the InP barriers were studied. The samples had a high carrier concentration which filled two minibands. In addition to a peak associated with the electrons from the second miniband, E2, the Shubnikov-de Haas spectra showed a well resolved doublet structure that is assigned to E1 electrons of superlattice wave vectors kz = 0 and kz = pi /d. From the lineshape of the Shubnikov-de Haas oscillations, an E1 quantum mobility of 970 cm2/Vs was deduced, which represents an increase of about 40% over the value for periodically delta-doped semiconductors. The photoluminescence ex- hibits a band at photon energies higher than the InGaAs bandgap and whose FWHM approximates the Fermi energy of the confined carriers. Thus the photoluminescence observed is consistent with the recombination of electrons confined by the superlattice potential and photoexcited holes.