Search

Hepatocellular carcinoma (HCC) is one of the major cancers with high mortality rate. Traditional drugs used in clinic are usually limited by the drug resistance and side effect and novel agents are still needed. Macrolide brefeldin A (BFA) is a well-known lead compound in cancer chemotherapy, however, with poor solubility and instability. In this study, to overcome these disadvantages, BFA was encapsulated in mixed nanomicelles based on TPGS and F127 copolymers (M-BFA). M-BFA was conferred high solubility, colloidal stability, and capability of sustained release of intact BFA. In vitro, M-BFA markedly inhibited the proliferation, induced G0/G1 phase arrest, and caspase-dependent apoptosis in human liver carcinoma HepG2 cells. Moreover, M-BFA also induced autophagic cell death via Akt/mTOR and ERK pathways. In HepG2 tumor-bearing xenograft mice, indocyanine green (ICG) as a fluorescent probe loaded in M-BFA distributed to the tumor tissue rapidly, prolonged the blood circulation, and improved the tumor accumulation capacity. More importantly, M-BFA (10 mg/kg) dramatically delayed the tumor progression and induced extensive necrosis of the tumor tissues. Taken together, the present work suggests that M-BFA has promising potential in HCC therapy.

Shenvi et al. have proposed a quantum algorithm based on quantum walking called Shenvi–Kempe–Whaley (SKW) algorithm, but this search algorithm can only search one target state and use a specific search target state vector. Therefore, when there are more than two target nodes in the search space, the algorithm has certain limitations. Even though a multi-objective SKW search algorithm was proposed later, when the number of target nodes is more than two, the SKW search algorithm cannot be mapped to the same quotient graph. In addition, the calculation of the optimal target state depends on the number of target states m. In previous studies, quantum computing and testing algorithms were used to solve this problem. But these solutions require more Oracle calls and cannot get a high accuracy rate. Therefore, to solve the above problems, we improve the multi-target quantum walk search algorithm, and construct a controllable quantum walk search algorithm under the condition of unknown number of target states. By dividing the Hilbert space into multiple subspaces, the accuracy of the search algorithm is improved from p c = (1/2) – O(1/n) to p c = 1 – O(1/n). And by adding detection gate phase, the algorithm can stop when the amplitude of the target state becomes the maximum for the first time, and the algorithm can always maintain the optimal number of iterations, so as to reduce the number of unnecessary iterations in the algorithm process and make the number of iterations reach t f = ( π / 2 ) 2 n − 2 .

For AlGaN/GaN HEMT fabrication, an isolation mesa etch is needed. Dry etch is usually used because wet etch is a difficult process for GaN. It was found that CCl2F2 chemistry can etch GaN easily. However, CCl2F2 chemistry may have difficulty to etch AlGaN or AlN because AlF3 is not volatile and can form a layer which blocks further etching. This can be overcome by increasing the RF power. Higher RF power helps by sputtering away the non-volatile AlF3. In this way, CCl2F2 can be used to etch AlGaN/GaN. CCl2F2 chemistry with Ar can be used to etch GaN with slightly higher selectively over AlGaN or AlN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A WSiN cap can improve the surface morphology of Ti/Al Ohmic contact to n-GaN significantly. This is because it is a conductive diffusion barrier which can help to suppress the decomposition of GaN. With WSiN cap, the edge is much sharper. However, the WSiN film may pick up Ar during the WSiN sputtering process, resulting in some surface morphology problem. This can be solved by lowering the Ar flow rate during sputtering. Auger electron spectroscopy results show that our best WSiN cap has a chemical composition of W0.62Si0.14N0.34. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Although the capability of scanning capacitance microscopy (SCM) for pn junction imaging has been qualitatively demonstrated, quantification of dopant profiles in two‐dimensions for pn junctions has proven to be a challenging problem. One reason is that the SCM result is seldom reproducible and this is generally believed to be due to sample preparation technique. In the first part of this work, we made a detailed study of sample preparation methods for SCM measurements. The purpose of the study was to establish an optimum sample preparation technique. Experiments were performed on two known dopant profiles: n type and p type staircase structures with concentration ranging from 1014 to 1019cm−3. These two samples were cross‐sectioned and prepared using different oxidation techniques, which caused variations of interface states and oxide quality. We studied the effect of wet oxidation, thermal oxidation, as well as combined wet and thermal oxidation. Experimental parameters : temperature, baking duration an...

A modified shift-and-ratio (MS&R) method of extracting the effective channel length (L eff) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of L eff generated by this method is more reasonable than the original shift-and-ratio method with much less computation time involved. We show the correctness of the MS&R method by comparing the L eff extracted with the channel length obtained by cross-sectional scanning capacitance microscopy (SCM) measurement. In addition, we show that a higher off current corresponds to a smaller L eff measured by our method.