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3. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author

Xavier Wallart, Daniel Vanmaekelbergh, Gilles Patriarche, David Troadec, Guillaume Fleury, Bruno Grandidier, Christophe Delerue, Nathali Alexandra Franchina Vergel, Maxime Berthe, Ludovic Desplanque, C. Coinon, Yannick Lambert, Tao Xu, François Vaurette, Davide Sciacca, Dmitri A. Yarekha, L. Christiaan Post, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Laboratoire de Chimie des Polymères Organiques (LCPO), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies, Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Sino-European School of Technology, University of Shanghai [Shanghai], Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Dutch Research Council (NWO Chemistry - Toppunt 'Superficial superstructures'), Natural Science Foundation of Shanghai (19ZR1419500), Renatech Network, PCMP PCP, ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-17-CE09-0021,GERMANENE,Croissance de germanene sur substrats à bande interdite(2017), European Project: FIRST STEP, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Physique-IEMN (PHYSIQUE-IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)

Subjects
Materials science, tight binding calculations, quantum well, flat band, Scanning tunneling spectroscopy, band engineering, Bioengineering, 02 engineering and technology, Electron, Lattice constant, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electronic band structure, Lithography, ComputingMilieux_MISCELLANEOUS, Quantum well, block copolymer lithography, business.industry, Mechanical Engineering, Heterojunction, disorder, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Two-dimensional lattice, Quantum dot, scanning tunneling spectroscopy, Optoelectronics, III−V semiconductor, 0210 nano-technology, business
Abstract

Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In0.53Ga0.47As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.

Published
2020

4. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Author

Tao Xu, Yannick Lambert, Bruno Grandidier, C. Coinon, N. A. Franchina Vergel, Christophe Delerue, Guillaume Fleury, C. Post, Xavier Wallart, Daniel Vanmaekelbergh, Dmitri A. Yarekha, T.S. Kulmala, François Vaurette, Ludovic Desplanque, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Physique - IEMN (PHYSIQUE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), This work was supported by the French National Research Agency (ANR-16-CE24-0007-01 Dirac III-V), the RENATECH network, the H2020 program (ERC Advanced Grant 692691-'FIRST STEP'), the Dutch Research Council (NWO Chemistry - Toppunt 'Superficial superstructures') and the Natural Science Foundation of Shanghai (19ZR1419500)., Renatech Network, PCMP PCP, ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), European Project: FIRST STEP, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Lithography, III-V semiconductors, InGaAs, Scattering, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Lattice constant, honeycomb, Lattice (order), Honeycomb, Physics::Atomic Physics, Quantum well, In0.53Ga0.47As, business.industry, Nanoperforation, Conical surface, Lattices, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Semiconductor, Quantum wells, Optoelectronics, two-dimensional lattices, business, Thermal scanning probe lithography
Abstract

International audience; Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.

Published
2021

5. Nano Perforation of InGaAs Quantum wells: a Lithography Route Towards III-V Semiconductors with Honeycomb Nanogeometry

Author

Xavier Wallart, Christophe Delerue, L. Christiaan Post, François Vaurette, Yannick Lambert, Tao Xu, Daniel Vanmaekelbergh, Nathali Alexandra Franchina Vergel, Bruno Grandidier, and Ludovic Desplanque

Subjects
Semiconductor, Materials science, business.industry, Perforation (oil well), Nano, Optoelectronics, Honeycomb (geometry), business, Lithography, Quantum well
Published
2018

6. Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics

Author

Paul F. Ndione, Thierry Melin, Neal R. Armstrong, Xin Wu, Hyungchul Kim, Yannick Lambert, Samuel Graham, Joseph J. Berry, and Kai-Lin Ou

Subjects
Anatase, Materials science, Organic solar cell, Renewable Energy, Sustainability and the Environment, business.industry, Nanotechnology, Heterojunction, General Chemistry, Substrate (electronics), Chemical vapor deposition, Amorphous solid, Titanium oxide, Optoelectronics, General Materials Science, business, Layer (electronics)
Abstract

Ultra-thin (0.5–10 nm) plasma-enhanced atomic layer deposited (PE-ALD) titanium oxide (TiOx) films, deposited on indium-tin-oxide (ITO) contacts, are investigated as hole-blocking interlayers using conventional electrochemistry of select probe molecules, in blended heterojunction (P3HT:PCBM) organic photovoltaics (OPVs) and in conventional Al/TiOx/p-Si diode platforms. Even films as thin as 0.5 nm, which represent as few as 10 ALD cycles, begin to show hole blocking in the electrochemical experiments, and optimized rectification and power conversion efficiencies are seen for the diode and OPV platforms respectively at a thickness of ca. 3 nm. These results suggest a significant reactivity of the ALD precursors with the ITO substrate to form conformal films with properties which can normally only be achieved with much thicker TiO2 films created from chemical vapor deposition or sol–gel solution processing. The performance of these PE-ALD TiOx layers is highly dependent on thickness. Up to ca. 3 nm these PE-ALD films remain amorphous, whereas for thicker layers (10 nm) grazing incidence X-ray diffraction shows a transition to the anatase structure, with an increase in both leakage current and reduction in shunt resistance in PV platforms. TiO2 films can be quite attractive electron-selective, hole-blocking interlayers in both PV and photoelectrochemical energy conversion platforms, but need to be thin, owing to their lower intrinsic conductivities. PE-ALD TiO2 films appear to provide these capabilities, with strikingly optimized performance at very low thickness.

Published
2015

7. Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications

Author

Marc Faucher, Tao Xu, Di Zhou, Bahram Djafari-Rouhani, Yannick Lambert, Odile Cristini-Robbe, Yan Pennec, Didier Stiévenard, Yves Deblock, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Key Laboratory of Advanced Display and System Application, and University of Shanghai [Shanghai]

Subjects
010302 applied physics, Physics, Nanostructure, Photon, Silicon, business.industry, Exciton, Finite-difference time-domain method, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, law.invention, Optics, chemistry, Abacus (architecture), law, 0103 physical sciences, Solar cell, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, business, Absorption (electromagnetic radiation)
Abstract

Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars--MPs--or nanocones--NCs--silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70 . Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

Published
2014

8. Phase transformation of PbSe/CdSe nanocrystals from core-shell to Janus structure studied by photoemission spectroscopy

Author

Ahmed Addad, F. J. Avila, O. Robbe, Sylvia Turrell, Yolanda Justo, Jean Philippe Nys, Yuval Golan, P. Capiod, J. Habinshuti, Maria C. Asensio, Zeger Hens, Jun Fujii, T.H. Nguyen, Ivana Vobornik, Karel Lambert, Bruno Grandidier, F. Bournel, Yannick Lambert, Anna Osherov, J.J. Gallet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Laboratoire de Spectrochimie Infrarouge et Raman - UMR 8516 (LASIR), Centre National de la Recherche Scientifique (CNRS)-Université de Lille, Physics and Chemistry of Nanostructures, Ghent University [Belgium] (UGENT), Synchrotron SOLEIL-Beamline ANTARES, Gif sur Yvette, Laboratoire de Chimie Physique - Matière et Rayonnement (LCPMR), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), INFM-CNR-TASC Laboratory, Area Science Park Basovizza - Trieste, Unité Matériaux et Transformations - UMR 8207 (UMET), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Ecole Nationale Supérieure de Chimie de Lille (ENSCL)-Institut National de la Recherche Agronomique (INRA), Department of Materials Engineering, Ilse Katz Institute for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev (BGU), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Universiteit Gent = Ghent University (UGENT), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut National de la Recherche Agronomique (INRA)-Ecole Nationale Supérieure de Chimie de Lille (ENSCL)-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), This work was supported by the European Community's Seventh Framework Program (Program No. FP7/2007-2013) under Grant Agreement No. 226716 and Grant No. PITN-GA-2008-214954 (the 'HERODOT' Project). The authors thank R. André for the growth of the CdSe bulk sample., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Centrale Lille Institut (CLIL), Universiteit Gent = Ghent University [Belgium] (UGENT), and Institut de Chimie du CNRS (INC)-Institut National de la Recherche Agronomique (INRA)-Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Ecole Nationale Supérieure de Chimie de Lille (ENSCL)

Subjects
LEVEL SHIFT, Materials science, Photoemission spectroscopy, SURFACE-STRUCTURE, 02 engineering and technology, Electronic structure, EPITAXY, 01 natural sciences, 61.46.Hk, X-ray photoelectron spectroscopy, Phase (matter), 0103 physical sciences, Janus, 010306 general physics, COLLOIDAL PBSE, PACS number(s): 64.70.Nd, BINDING-ENERGY, CORE/SHELL QUANTUM DOTS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, ELECTRONIC-STRUCTURE, Chemical state, Physics and Astronomy, Nanocrystal, Transmission electron microscopy, Chemical physics, RAY PHOTOELECTRON-SPECTROSCOPY, X-RAY, CATION-EXCHANGE, Atomic physics, 0210 nano-technology
Abstract

Photoelectron spectroscopic measurements have been performed, with synchrotron radiation on PbSe/CdSe heteronanocrystals that initially consist of core-shell structures. The study of the chemical states of the main elements in the nanocrystals shows a reproducible and progressive change in the valence-band and core-level spectra under photon irradiation, whatever the core and shell sizes are. Such chemical modifications are explained in light of transmission electron microscopy observations and reveal a phase transformation of the nanocrystals: The core-shell nanocrystals undergo a morphological change toward a Janus structure with the formation of semidetached PbSe and CdSe clusters. Photoelectron spectroscopy gives new insight into the reorganization of the ligands anchored at the surface of the nanocrystals and the modification of the electronic structure of these heteronanocrystals.

Published
2013

9. Narrowing the length distribution of Ge nanowires

Author

Tao Xu, Yannick Lambert, Bruno Grandidier, Vladimir G. Dubrovskii, Wanghua Chen, Philippe Pareige, J. P. Nys, Didier Stiévenard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Nanostructure, Materials science, Condensed matter physics, Nanowire, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Uniform size, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, Diffusion flux, Growth rate, Length distribution, 0210 nano-technology, Beam (structure), Molecular beam epitaxy
Abstract

Synthesis of nanostructures of uniform size is fundamental because the size distribution directly affects their physical properties. We present experimental data demonstrating a narrowing effect on the length distribution of Ge nanowires synthesized by the Au-catalyzed molecular beam epitaxy on Si substrates. A theoretical model is developed that is capable of describing this puzzling behavior. It is demonstrated that the direction of the diffusion flux of sidewall adatoms is size dependent and has a major effect on the growth rate of differently sized nanowires. We also show that there exists a fundamental limitation on the maximum nanowire length that can be achieved by molecular beam epitaxy where the direction of the beam is close to the growth axis.

Published
2012

10. Photo-assisted synthesis of silver nanoparticles in a photopolymerizable hybrid sol-gel

Author

Lavinia Balan, Yannick Lambert, Olivier Soppera, Raphaël Schneider, Photomatériaux pour l'Optique et les Nanotechnologies (PHOTON LRC 7228), Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA)), Laboratoire des Interactions Microorganismes-Minéraux-Matière Organique dans les sols (LIMOS), and Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.POLY]Chemical Sciences/Polymers, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2010

12. Ligand influence on the growth and quality of CdSe and CdTe nanocrystals prepared in the aqueous phase

Author

Aldeek, F., Lavinia Balan, Yannick Lambert, Raphaël Schneider, Laboratoire des Interactions Microorganismes-Minéraux-Matière Organique dans les sols (LIMOS), Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS), Departement de Photochimie Générale, and Ecole Nationale Supérieure de Chimie de Mulhouse

Subjects
[CHIM.POLY]Chemical Sciences/Polymers, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2009

13. Influence of the capping thioalkylacid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

Author

Aldeek, F., Lavinia Balan, Yannick Lambert, Raphaël Schneider, Laboratoire des Interactions Microorganismes-Minéraux-Matière Organique dans les sols (LIMOS), Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS), Département de Photochimie Générale (DPG), and Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.POLY]Chemical Sciences/Polymers, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

14. Second harmonic generation imaging of LiIO3/laponite nanocomposite waveguides

Author

J. Bouillot, Hiromitsu Hayakawa, Yannick Lambert, Yannick Mugnier, Yoshiaki Uesu, Christine Galez, Jean-Claude Plenet, Ronan Le Dantec, Laboratoire SYstèmes et Matériaux pour la MEcatronique (SYMME), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Department of Physics, Waseda University, Department of Physics [Tokyo], Advanced Research Institute of Science and Technology (Advanced Research Institute of Science and Technology), and Symme, Univ. Savoie Mont Blanc

Subjects
lithium iodate, Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), General Physics and Astronomy, [SPI.MECA.MSMECA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Materials and structures in mechanics [physics.class-ph], 02 engineering and technology, m-line spectroscopy, 010402 general chemistry, 01 natural sciences, Dip-coating, chemistry.chemical_compound, Optics, Electric field, quadratic nonlinear optics, ComputingMilieux_MISCELLANEOUS, Nanocomposite, dip coating, business.industry, General Engineering, Second-harmonic generation, Lithium iodate, [PHYS.MECA.MSMECA]Physics [physics]/Mechanics [physics]/Materials and structures in mechanics [physics.class-ph], Second Harmonic Generation Microscopy, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0104 chemical sciences, chemistry, Nanocrystal, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Laponite, 0210 nano-technology, business
Abstract

We have developed LiIO3/laponite nanocomposite thin films to form waveguides with quadratic nonlinear optical properties. The films are dip-coated and annealed to induce LiIO3 crystallisation within the laponite matrix. LiIO3 nanocrystal orientation can be controlled using an electric field during the annealing process. In this article we perform the characterisations of the nanocomposite films through m-line spectroscopy and second harmonic generation microscopy (SHGM). Both refractive indexes deduced from m-line spectra and the SHG signal are shown to depend on the nanocrystal orientation distribution, and a relationship between the optical properties and microscopic structure of the films is developed.

Published
2006

15. Optical absorption of silicon nanowires

Author

Gaëtan Lévêque, Christophe Krzeminski, Yannick Lambert, Tao Xu, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Bruno Grandidier, Didier Stiévenard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Key Laboratory of Advanced Display and System applications, Shanghai University, and Délégation Générale de l'Armement (DGA) sous contrat No. REI N 2008.34.0031 Contrat Plan-Etat-Région Nord Pas de Calais (CPER 2007-2013)

Subjects
Materials science, Silicon, Nanowire, FOS: Physical sciences, Physics::Optics, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Light scattering, 0103 physical sciences, Absorption (electromagnetic radiation), 010302 applied physics, Condensed Matter - Materials Science, business.industry, Scattering, Photoconductivity, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Semiconductor, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Visible spectrum
Abstract

International audience; We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the Finite Difference Time Domain (FDTD) method is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies, that allows to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

Published
2012

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