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International audience; Fiber-textured polycrystalline silicon thin films have demonstrated their interest as seed layers for the epitaxial growth of high-quality materials on substrates such as glass or plastics. In the present work, we report a comprehensive study of the aluminum-induced crystallization (AIC) of isolated Si domains. Our study not only demonstrates the fabrication by AIC of shape- and size-controlled Si monocrystals at the nanoscale but also allows for the prediction of minimal annealing conditions for complete crystallization of such structures. These ultrathin [111]-oriented monocrystals are promising candidates as selected-area epitaxy substrates with both an easy control on the morphology of these structures and a low-temperature fabrication process.

We demonstrate the vertical self-catalyzed molecular beam epitaxy (MBE) growth of GaAs nanowires on an amorphous SiO2 substrate by using a smooth [111] fiber-textured silicon thin film with very large grains, fabricated by aluminum-induced crystallization. This generic platform paves the way to the use of inexpensive substrates for the fabrication of dense ensembles of vertically standing nanowires (NWs) with promising perspectives for the integration of NWs in devices.

International audience; We report the behavior of thermosensitive soft microgel particles adsorbed at the air-water interface. We study the effect of temperature on the adsorption, interfacial diffusion, and surface rheology of pure N-isopropylacrylamide (NiPAM) microgel particles at the air-water interface. We find that the surface tensions of the solutions are the same as those of polyNiPAM solution; hence, their adsorption properties are dominated by the surface activity of the NiPAM repeat units of the particles. Particle-tracking experiments show that the particles adsorb irreversibly at the interface and form stable clusters at very low concentrations, e.g., 5.10(-3) wt%. We suggest that attractions between dangling arms or capillary interaction may be responsible for the formation of these clusters. For concentrations above 10(-2) wt%, the interface is filled with particles, and their Brownian diffusivity is arrested. The compression elastic moduli-measured using the pendant drop method-are one or two orders of magnitude below those obtained for hard particles and NiPAM chains, and their value is probably dominated by the intrinsic compressibility of the particles. The thin liquid films made from microgels exhibit a symmetric drainage, consistent with a high surface viscosity, but their lifetime is surprisingly short, illustrating the fragility of the films. We observed the formation of a monolayer of microgels bridging the two interfaces of the film outside the dimple. This zone grows and thins over time to a point where the microgels are highly compressed and stretched, resulting in the rupture of the film

Broadened plasmon resonances of Cu nanoparticles in nanopatterned mixed oxide sol-gel nanopillars are shown to be readily detected by spectroscopic Mueller matrix ellipsometry. The plasmonic nanomaterials are obtained by low energy ion sputtering of a CuO sol-gel film. Both s- and p-polarized plasmon resonances are observed in the off-block-diagonal and the block-diagonal Mueller matrix elements as well as in the generalized ellipsometric parameters. The resonant features in all elements correlate with both maximum depolarization and a minimum in the reflected intensity. The spectral position and the polarization character of the plasmon resonances are discussed phenomenologically through effective medium theory. © 2013 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

International audience; We demonstrate that small tilts away from the substrate normal, of short (30-40 nm high) nanopillars, may be detected and modeled by spectroscopic UV-Visible Mueller Matrix Ellipsometry (MME). The pillars were produced by sputtering a GaSb substrate with a low energy unfocused ion beam. It has previously been found that the pillars will point in the direction of the ion flux. For both samples reported here, the ion-incidence was unintentionally tilted away from the substrate normal by 2.8 and 4.8°. The MME measurements were performed using both multiple angles of incidence, and 360° rotation of the incidence plane. Graded uniaxial effective medium models were fitted to the experimental data, and through Euler angle rotations of the dielectric tensor, the tilt angle and the orientation of the pillar direction, were obtained. The UV part of the spectrum enhanced the tilt angle sensitivity down to 0.02-0.05°. A data presentation that enhances the understanding of the symmetry in the crystallographic information obtained from spectroscopic MME is proposed. The off block diagonal Mueller matrix elements are more sensitive to the in-plane anisotropy, whereas for small tilt angles m14 scales approximately with θsin(ϕ).

III–V semiconductors are materials of interest for energy production and lighting. However, these materials are difficult to grow by heteroepitaxy because of their lattice and thermal expansion coefficient mismatches with substrates. The resulting dislocations are extremely detrimental to their electronic properties. Nanostructures like nanowires relax efficiently the strain, thanks to their lateral free surfaces. Thus, they improve the material quality compared to planar thin films.In this PhD thesis, we demonstrate that a [111] fiber-textured polycristalline silicon layer film can be an efficient thin film substrate for oriented nanowire growth on an amorphous support. Such a film can be obtained by using the aluminum-induced crystallization of amorphous silicon. The optical and physical properties of the substrate are conserved by using a very thin Si layer (less than 10-nm thick).For many applications, organizing the nanowires in an array can be favorable. We demonstrate that this goal can be achieved by using small single crystal Si platelets (up to 100 nm in diameter). In a first time, the crystallization of these “nano-substrates” is comprehensively studied in order to define precise fabrication recipes. In a second time, we prove the concept of nanowire growth on these thin lithographed crystals., Les semiconducteurs III–V sont des matériaux de choix pour la production d’électricité ou pour l’éclairage. En revanche, ce sont des matériaux difficiles à mettre en oeuvre sous la forme de couches minces bidimensionnelles par hétéro-épitaxie en raison des forts écarts de paramètres de mailles et de coefficient d’expansion thermique avec les substrats. Il en résulte notamment de nombreuses dislocations très préjudiciables pour les propriétés de ces semiconducteurs. Une manière pour réduire cette quantité de défauts est d'utiliser le semiconducteur sous la forme de nanostructures, telles que les nanofils.Nous démontrons dans cette thèse de doctorat qu’un film polycristallin de silicium, s’il est doté d’une texture de fibre [111], est un candidat de choix pour jouer le rôle de substrat couche mince pour la croissance épitaxiale de nanofils orientés, sur un support amorphe. Un tel film peut être obtenu à grande échelle par cristallisation du silicium amorphe induite par l’aluminium. L’utilisation d’une couche très mince (moins de 10 nm) permet alors de profiter avantageusement des propriétés optiques du substrat.Pour de nombreuses applications, il peut être profitable de pouvoir localiser les nanofils selon un schéma prédéfini. Nous démontrons que cet objectif peut être réalisé grâce à l’emploi de plaquettes monocristallines de Si de quelques dizaines de nanomètres de diamètre. La cristallisation de ces véritables nano-substrats est tout d’abord étudiée en détails afin d’élaborer une recette robuste de fabrication. Dans un second temps, nous démontrons le concept de croissance de nanofils sur ces minces cristaux lithographiés.