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Bi2MoO6 (BMO) is a typical bismuth-based semiconductor material, and its unique Aurivillius structure provides a broad space for electron delocalization. In this study, a new type of bismuth molybdate Cd/Er-BMO photocatalytic material was prepared by co-doping Er3+ and Cd2+, and the performance of the photocatalytic degradation of sulfamethoxazole (SMZ) was systematically studied. The research results showed that the efficiency of SMZ degradation by Cd/Er-BMO was significantly improved after doping Er3+ and Cd2+ ions, reflecting the synergistic catalytic effect of Cd2+ and Er3+ co-doping. Cd/Er-BMO doped with 6% Cd had the highest degradation efficiency (93.89%) of SMZ under visible light irradiation. The material revealed excellent stability and reusability in repeated degradation experiments. In addition, 6% Cd/Er-BMO had a smaller particle size and a larger specific surface area, which is conducive to improving the generation efficiency of its photogenerated electron-hole pairs and reducing the recombination rate, significantly enhancing the photocatalysis of the material. This study not only provides an effective photocatalyst for degrading environmental pollutants such as SMZ, but also provides an important scientific basis and new ideas for the future development of efficient and stable photocatalytic materials. [ABSTRACT FROM AUTHOR]

We utilized a first-principle density functional theory for a comprehensive analysis of CsPbX3 (X = F, Cl, Br, I) to explore its physical and chemical properties, including its mechanical behavior, electronic structure and optical properties. Calculations show that all four materials have good stability, modulus of elasticity, hardness and wear resistance. Additionally, CsPbX3 demonstrates a vertical electron leap and serves as a semiconductor material with direct band gaps of 3.600 eV, 3.111 eV, 2.538 eV and 2.085 eV. In examining its optical properties, we observed that the real and imaginary components of the dielectric function exhibit peaks within the low-energy range. Furthermore, the dielectric function gradually decreases as the photon energy increases. The absorption spectrum reveals that the CsPbX3 material exhibits the highest UV light absorption, and as X changes (with the increase in atomic radius within the halogen group of elements), the light absorption undergoes a red shift, becoming stronger and enhancing light utilization. These properties underscore the material's potential for application in microelectronic and optoelectronic device production. Moreover, they provide a theoretical reference for future investigations into CsPbX3 materials. [ABSTRACT FROM AUTHOR]