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Aspect sentiment quad prediction (ASQP) is a challenging yet significant subtask in aspect-based sentiment analysis as it provides a complete aspect-level sentiment structure. However, existing ASQP datasets are usually small and low-density, hindering technical advancement. To expand the capacity, in this paper, we release two new datasets for ASQP, which contain the following characteristics: larger size, more words per sample, and higher density. With such datasets, we unveil the shortcomings of existing strong ASQP baselines and therefore propose a unified one-step solution for ASQP, namely One-ASQP, to detect the aspect categories and to identify the aspect-opinion-sentiment (AOS) triplets simultaneously. Our One-ASQP holds several unique advantages: (1) by separating ASQP into two subtasks and solving them independently and simultaneously, we can avoid error propagation in pipeline-based methods and overcome slow training and inference in generation-based methods; (2) by introducing sentiment-specific horns tagging schema in a token-pair-based two-dimensional matrix, we can exploit deeper interactions between sentiment elements and efficiently decode the AOS triplets; (3) we design ``[NULL]'' token can help us effectively identify the implicit aspects or opinions. Experiments on two benchmark datasets and our released two datasets demonstrate the advantages of our One-ASQP. The two new datasets are publicly released at \url{https://www.github.com/Datastory-CN/ASQP-Datasets}., Comment: 15 pages, 12 tables, 3 figures, ACL Findings

Epitaxial growth and controllable doping of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking 4-inch single-crystal Fe-doped TMDCs monolayers on industry-compatible c-plane sapphire without miscut angle. In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional TMDCs domains (>99%). The ultrahigh electron mobility (~86 cm2 V -1 s-1) and remarkable on/off current ratio (~108) are discovered on 4-inch single-crystal Fe-MoS2 monolayers due to the ultralow contact resistance and perfect Ohmic contact with metal electrodes. This work represents a substantial leap in terms of bridging the synthesis and doping of wafer-scale single-crystal 2D semiconductors without the need for substrate miscut, which should promote the further device downscaling and extension of Moore's law., Comment: 17 pages, 5 figures

Adiabatic waveguide taper and on-chip wavelength demultiplexer are the key components of photonic integrated circuits. However, these two kinds of devices which designed by traditional semi-analytic methods or brute-force search methods usually have large size. Here, based on regularized digital metamaterials, we have designed, fabricated and characterized a two-channel focused wavelength demultiplexer with a footprint of 2.4 x 10 um2. The designed demultiplexer can directly connect to a grating coupler under the absence of an adiabatic waveguide taper. The objective first method and modified steepest descent method are used to design the demultiplexer which splits 1520 nm and 1580 nm light from a 10-um-wide input waveguide into two 0.48-um-wide output waveguides. Experimental results show that the insertion loss of the upper (lower) channel of the demultiplexer is -1.77 dB (-2.10 dB) and the crosstalk is -25.17 dB (-12.14 dB). Besides, the simulation results indicate that the fabrication tolerance of our devices can reach 20 nm in etching depth and 10 nm in plane size changing. Benefit From the extensibility of our design method, we can design other types of ultra-compact 'focused' devices, like mode splitters, mode converters and power splitters, and we can also design devices with more complicated functionalities, for example, we have designed a three-channel focused wavelength demultiplexer., Comment: 24 pages, 7 figures

We numerically propose an all-dielectric hybrid metamaterial (MM) to realize all-optical switch and logic gates in shortwave infrared (SWIR) band. Such MM consists of one silicon rod and one Ge2Sb2Te5 (GST) rod pair. Utilizing the transition from amorphous to crystalline state of GST, such MM can produce electromagnetically induced transparency (EIT) analogue with active control. Based on this, we realized all-optical switching at 1500 nm with a modulation depth 84%. Besides, three different logic gates, NOT, NOR and OR, can also be achieved in this device simultaneously. Thanks to the reversible and fast phase transition process of GST, this device possesses reconfigurable ability as well as fast response time, and has potential applications in future optical networks.

We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and non-volatile modulators and switches with excellent modulation depth 14 dB and fast response time in nanosecond, meanwhile possessing small footprints, simple frameworks and easy fabrication. This work provides new solutions to design active devices in MIM waveguide systems, and can find potential applications in more compact all-optical circuits for information processing and storage.

Recently, phase-change materials (PCMs) have drawn more attention due to the dynamically tunable optical properties. Here, we investigate the active control of electromagnetically induced transparency (EIT) analogue based on terahertz (THz) metamaterials integrated with vanadium oxide (VO2). Utilizing the insulator-to-metal transition of VO2, the amplitude of EIT peak can be actively modulated with a significant modulation depth. Meanwhile the group delay within the transparent window can also be dynamically tuned, achieving the active control of slow light effect. Furthermore, we also introduce independently tunable transparent peaks as well as group delay based on a double-peak EIT with good tuning performance. Finally, based on broadband EIT, the active tuning of quality factor of the EIT peak is also realized. This work introduces active EIT control with more degree of freedom by employing VO2, and can find potential applications in future wireless and ultrafast THz communication systems as multi-channel filters, switches, spacers, logic gates and modulators.

We propose a plasmonic ellipse resonator possessing hybrid modes based on metal-insulator-metal (MIM) waveguide system. Specially, this nanocavity has hybrid characteristic of rectangle and disk resonator, therefore supporting both Fabry-Perot modes (FPMs) and whispering-gallery modes (WGMs). Besides, by changing the length of major and minor radius of the ellipse, the resonant wavelengths of FPMs and WGMs can be independently tuned and close to each other, thus constructing a plasmon-induced transparency (PIT) - like spectrum profile. Benefitting from this, a dual-band slow light is achieved with one single resonator. Furthermore, this component can also act as a multi-band color filter and refractive index sensor. We believe such multi-mode resonator with ultra-small footprint will play an important role in more compact on-chip optical circuits in the future.

As an analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has been realized both in plasmonic metamaterial and waveguide structures. Via near-field coupling within unit cells, PIT with broadband could be produced by plasmonic metamaterials, which, however, has not been realized in on-chip plasmonic waveguide structures. Here, we introduce broadband PIT based on a plasmonic metal-insulator-metal (MIM) waveguide system. Utilizing the direct coupling structure, PIT emerges based on an easy-fabricated structure without gap. By tuning coupling distance, the transparent window can be continuously tuned from narrow- to broadband. Such device is promising for on-chip applications on sensing, filtering and slow light over a broad frequency range.

Plasmonic resonators have drawn more attention due to the ability to confine light into subwavelength scale. However, they always suffer from a low quality (Q) factor owing to the intrinsic loss of metal. Here, we numerically propose a plasmonic resonator with ultra-high Q factor based on plasmonic metal-insulator-metal (MIM) waveguide structures. The resonator consists of a disk cavity surrounded by a concentric ring cavity, possessing an ultra-small volume. Arising from the plasmon hybridization between plasmon modes in the disk and ring cavity, the induced bonding hybridized modes have ultra-narrow full wave at half maximum (FWHM) as well as ultra-high Q factors. The FWHM can be nearly 1 nm and Q factor can be more than 400. Furthermore, such device can act as a refractive index sensor with ultra-high figure of merit (FOM). This work provides a novel approach to design plasmonic high-Q-factor resonators, and has potential on-chip applications such as filters, sensors and nanolasers.

A hybrid metal-graphene metamaterial (MM) is reported to achieve the active control of the broadband plasmon-induced transparency (PIT) in THz region. The unit cell consists of one cut wire (CW), four U-shape resonators (USRs) and monolayer graphene sheets under the USRs. Via near-field coupling, broadband PIT can be produced through the interference between different modes. Based on different arrangements of graphene positions, not only can we achieve electrically switching the amplitude of broadband PIT, but also can realize modulating the bandwidth of the transparent window. Simultaneously, both the capability and region of slow light can be dynamically tunable. This work provides schemes to manipulate PIT with more degrees of freedom, which will find significant applications in multifunctional THz modulation.