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Your search keyword '"Yang, Guoshen"' showing total 31 results
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31 results on '"Yang, Guoshen"'

14. Electrode-free flexible batteries enabled by electro-deposition of both Zn and MnO2 from electrolytes.

Author

Luo, Shiqiang, Liu, Shiwei, Yang, Guoshen, Liu, Chuanlong, Wu, Jiazhen, Hiralal, Pritesh, Nie, Zanxiang, Amaratunga, Gehan A. J., and Zhou, Hang

Subjects
ZINC electrodes, ELECTROLYTES, STORAGE batteries, MANGANESE, ZINC
Abstract

We propose an electrode-free zinc manganese battery, where both zinc and MnO2 are electro-deposited from the electrolyte via a charging process onto carbon current collectors. The electrode-free batteries show an improved cycling performance of thin-film batteries than the ones with a zinc anode and a facilitated fabrication process for fiber batteries. [ABSTRACT FROM AUTHOR]

Published
2024
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24. Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor.

Author

Chen, Tong, Wang, Chunyun, Yang, Guoshen, Lou, Qiang, Lin, Qingping, Zhang, Shengdong, and Zhou, Hang

Subjects
INDIUM gallium zinc oxide, IMAGE sensors, THIN film transistors, PEROVSKITE, TRANSISTORS, OPTOELECTRONIC devices, PHOTOTRANSISTORS
Abstract

Monolithic integration of perovskite materials and their optoelectronic devices with well‐developed thin‐film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high‐sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 µm are fabricated by spin‐on‐patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high‐performance phototransistors with responsivity and detectivity reaching 835.7 A W−1 and 5.4 × 1012 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non‐patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high‐resolution image sensors. [ABSTRACT FROM AUTHOR]

Published
2023
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