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19 results on '"Yang, Fengyou"'

1. All-atomristor logic gates

Author

Wang, Shu, Zhou, Zhican, Yang, Fengyou, Chen, Shengyao, Zhang, Qiaoxuan, Xiong, Wenqi, Qu, Yusong, Wang, Zhongchang, Wang, Cong, and Liu, Qian

Published
2023
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4. All-atomristor logic gates

Author

Wang, Shu, primary, Zhou, Zhican, additional, Yang, Fengyou, additional, Chen, Shengyao, additional, Zhang, Qiaoxuan, additional, Xiong, Wenqi, additional, Qu, Yusong, additional, Wang, Zhongchang, additional, Wang, Cong, additional, and Liu, Qian, additional

Published
2022
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12. High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst.

Author

Yang, Fengyou, Chen, Shengyao, Feng, Huimin, Wang, Cong, Wang, Xiaofeng, Wang, Shu, Zhou, Zhican, Li, Bo, Ma, Lijun, Yang, Haiguang, Xie, Yong, and Liu, Qian

Abstract

Compared with a conventional CMOS-based optoelectronic system, two-dimensional (2D) material-based nonvolatile optoelectronic memory has attracted increasing attention because of its ability to rapidly transform optoelectronic signals, as well as simultaneously store and output signals. However, existing two-dimensional optoelectronic memory cannot meet requirements in performance and cost and so on, and needs urgently to be explored. Here we developed a high-performance nonvolatile MoS2-based optoelectronic memory device based on a MoS2 bilayer grown by a Au catalyst. The device exhibits an excellent performance index of current on/off ratio ∼8 × 104 and retention time ∼2.2 × 104 s. Experimental observations and simulation calculations have revealed that the optoelectronic memory mechanism can be ascribed to defects including S vacancies and disorder of atoms in 2D MoS2 materials. [ABSTRACT FROM AUTHOR]

Published
2020
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19. Strain‐Induced Band‐Gap Tuning of 2D‐SnSSe Flakes for Application in Flexible Sensors.

Author

Du, Lena, Wang, Cong, Xiong, Wenqi, Wei, Bin, Yang, Fengyou, Chen, Shengyao, Ma, Lijun, Wang, Xiaofeng, Xia, Congxin, Zhang, Xinzheng, Wang, Zhongchang, and Liu, Qian

Subjects
STRAIN sensors, TERNARY alloys, DETECTORS, DENSITY of states
Abstract

Flexible strain‐sensitive‐material‐based sensors are desired owing to their widespread applications in intelligent robots, health monitoring, human motion detection, and other fields. High electrical–mechanical coupling behaviors of 2D materials make them one of the most promising candidates for miniaturized, integrated, and high‐resolution strain sensors, motivating to explore the influence of strain‐induced band‐gap changes on electrical properties of more materials and assess their potential application in strain sensors. Herein, a ternary SnSSe alloy nanosheet‐based strain sensor is reported showing an enhanced gauge factor (GF) up to 69.7 and a good reproducibility and linearity within strain of 0.9%. Such sensor holds high‐sensitive features under low strain, and demonstrates an improved sensitivity with a decrease in the membrane thickness. The high sensitivity is attributed to widening band gap and density of states reduction induced by strain, as verified by theoretical model and first‐principles calculations. These findings show that a sensor with adjustable strain sensitivity might be realized by simply changing the elemental constituents of 2D alloying materials. [ABSTRACT FROM AUTHOR]

Published
2020
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