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A recent mathematical framework for optimizing resistor networks to achieve values in the M{\Omega} through G{\Omega} levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows one to calculate and implement network designs with substantially lower-valued resistors. The cases of 100 M{\Omega} and 1 G{\Omega} demonstrate that, theoretically, one would not need more than 100 quantum Hall elements to achieve these high resistances.

A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 E{\Omega}, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 {\Omega}) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances

Elementary electronic excitations, which are due to the Coulomb-field scatterings, present the diverse phenomena in 3D, 2D, 1D-nanotube electron gases, graphene and carbon nanotubes. The critical mechanisms cover the dimension-dependent bare Coulomb potentials, energy dispersions, and free/valence carrier density. They are responsible for the main features, the available excitation channels (the electron-hole regions), the joint van Hove singularities, the undamped/damped collective excitations at small/sufficiently high transferred momenta, the momentum dependences of plasmon frequencies (acoustic and optical modes), and their categories (the intraband and inter-pi-band plasmons). There exists certain significant similarities and difference among various systems. The (momentum/ angular momentum, frequency)-excitation phase diagrams are directly reflected in the propagation of plasma waves., Comment: 63pages,24figures

Low-energy electronic properties of ABC-stacked graphite are studied by the tight-binding model. There are linear and parabolic bands with and without degeneracy. They show strongly anisotropic dispersions. ABC-stacked grahite is a semimetal due to slight overlapping near the Fermi level beween conduction and valence bands. The interlayer interactions could change the energy dispersion, state degeneracy, and positions of band-crossing and band-edge state. Density of states exhibit a shoulder structure, owing to band-edge states near or at high symmetric points. Low-frequency Coulomb excitation properties with different transferred momenta (${\bf q}'$s) are further studied within the random phase approximation. The Landau dampings is too serious under the parallel transferred momentum (${\bf q}\perp \hat z$); therefore, it is impossible to observe the 3D optical plasmons. However, even for the perpendicular transferred momentum (${\bf q}\parallel \hat z$), the full assistance due to the thermal excitations is necessary to induce the collective charge oscillations along the $z$-axis. The height and position of temperature-induced plasmon peak in the energy loss spectrum are greatly enhanced by the increasing temperature, but weakly depend on the various transferred momenta. These features are very different from AA- and AB-stacked graphites.