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The ultrafast motion of oxygen vacancies in solids is crucial for various future applications, such as oxide electrolytes. Visualization and quantification can offer unforeseen opportunities to probe the collective dynamics of defects in crystalline solids, but little research has been conducted on oxygen vacancy electromigration using these approaches. Here, we visualize electric-field-induced creation and propagation of oxygen-vacancy-rich and -poor competing phases and their interface with optical contrast in Ca-substituted BiFeO3 that contains a high density of mobile oxygen vacancies. We quantitatively determined the drift velocity of collective migration to be on the order of 100 μm s−1 with an activation barrier of 0.79 eV, indicating a significantly large ionic mobility of 2 × 10−6 cm2 s−1 V−1 at a remarkably low temperature of 390 °C. In addition, visualization enables direct observation of fluidic behavior, such as the enhancement of conduction at channel edges, which results in U-shaped viscous propagation of the phase boundary and turbulence under a reverse electric field. All of these results provide new insights into the collective motion of defects.

Topological defects in matter behave collectively to form highly non-trivial structures called topological textures that are characterised by conserved quantities such as the winding number. Here we show that an epitaxial ferroelectric square nanoplate of bismuth ferrite subjected to a large strain gradient (as much as 105 m-1) associated with misfit strain relaxation enables five discrete levels for the ferroelectric topological invariant of the entire system because of its peculiar radial quadrant domain texture and its inherent domain wall chirality. The total winding number of the topological texture can be configured from - 1 to 3 by selective non-local electric switching of the quadrant domains. By using angle-resolved piezoresponse force microscopy in conjunction with local winding number analysis, we directly identify the existence of vortices and anti-vortices, observe pair creation and annihilation and manipulate the net number of vortices. Our findings offer a useful concept for multi-level topological defect memory.

Lattice defects such as oxygen vacancies, interstitials, and their complexes are present in crystalline oxide materials. In particular, anti‐Frenkel defects, which refer to charge‐neutral anion vacancy‐interstitial pairs, are strongly coupled with ferroelectric and dielectric properties as electric dipoles. However, in order to observe their macroscopic manifestation, delicate defect controls are required to the extent that electronic and ionic charges are almost completely suppressed. Here, the thermal cycle dependence of dielectric and piezoelectric properties is scrutinized in the strain‐driven morphotropic phase boundaries of multiferroic La‐substituted BiFeO3 thin films. Electrochemical impedance spectroscopy provides the Warburg feature that is considered evidence of the ionic origin. The observations are discussed based on anti‐Frenkel defects that are created or annihilated reversibly by thermal cycles through high‐temperature structural phase transition temperature or magnetic Néel temperature. The defect dipoles are spontaneously aligned by the flexoelectric effect in the phase boundaries inducing a metastable interfacial ferroelectric phase. The findings offer useful insight into defect dipoles. [ABSTRACT FROM AUTHOR]

We explore the electronic transport properties of hydrogenated epitaxial WO3 films. Ionized hydrogen not only generates an electron carrier but also acts as an impurity center, providing a useful approach to investigate a macroscopic quantum transport phenomenon of weak localization. Temperature dependent-resistivity and anomalous magnetoresistance results are analyzed based on Mott's variable range hopping and weak localization. From the model studies, the phase coherence length is estimated to have a temperature dependence of T −1.6 and is determined to vary from ∼22 nm at 80 K to ∼180 nm at 20 K. The length at 20 K is of a similar order of magnitude of film thickness, which requires a dimensional crossover between three-dimensional and two-dimensional localization. [ABSTRACT FROM AUTHOR]

Exploring the unique physical properties of oxide perovskites necessitates their growth on diverse single‐crystal substrates. The thin‐film growth of perovskite SrMnO3 (SMO) has been a particular focus of research due to its emerging room‐temperature multiferroicity. Herein, the epitaxial thin films of (110)‐oriented SMO are grown on the piezoelectric (110)‐oriented (1–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN‐PT) substrate. The effects of the thickness and oxygen annealing on the crystal structure, stoichiometry, and ferroelectric properties of the SMO thin film are systematically investigated. The tensile strain produced by the lattice mismatch between the bulk SMO and the PMN‐PT substrate causes an expansion of the c‐lattice parallel to the in‐plane direction of the substrate. The films show larger a‐, b‐, and c‐lattice parameters than the bulk material, resulting in volume expansion of the unit cell. This lattice expansion is attributed to the generation of oxygen vacancies driven by the reduced formation energy caused by the high elastic strain. Piezoelectric force microscopy reveals that the SMO film contains domains with strain‐mediated in‐plane and vacancy‐mediated out‐of‐plane polarization. Furthermore, the piezoelectric response of the PMN‐PT substrate effectively modulates the biaxial tensile strain in the SMO film, offering a potential strategy for controlling the crystal structure and ferroelectric properties of SMO. [ABSTRACT FROM AUTHOR]

Topological polar structures are attracting attention as potential applications of next-generation high-density memories. We investigate how the ferroelectric domain evolves with film thickness in c-axis oriented epitaxial Bi2WO6 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates. In addition to the general thickness scaling effect on domain size, we find that 3- or 4-variant domains appear in a sample thicker than 120 nm, whereas ⟨100⟩-type domains compete with the ⟨110⟩ ones in thinner samples, resulting in a variety of nontrivial topological structures. By visualizing the spatial distribution of electric polarizations through angle-resolved piezoresponse force microscopy, we provide direct evidence for the spontaneous emergence of nontrivial topological polar structures. These results provide useful insights into the domain behavior of layered ferroelectric thin films. [ABSTRACT FROM AUTHOR]

Bulk LaMnO3 is an A-type antiferromagnetic material in which the Jahn–Teller (JT) planes each have a ferromagnetic arrangement, but are stacked in antiparallel. Here, we report the growth of epitaxial LaMnO3 films on (001)-oriented cubic KTaO3 substrates in such a way that the JT plane is parallel to the nonmagnetic substrate. We verify the presence of the JT distortion and confirm the orientation of the plane by symmetry analysis with angle-resolved polarized Raman spectroscopy. The temperature evolution of the Raman spectra indicates that the B1g JT phonon softens below the magnetic transition temperature of ∼145 K, where ferro- or ferri-magnetism with magnetic easy axis along the out-of-plane direction is exhibited. [ABSTRACT FROM AUTHOR]

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures. The control of magnetism by electric field is an important goal for future development of low-power spintronics. Here, the authors demonstrate voltage control of magnetism in van der Waals ferromagnetic/ferroelectric heterostructure devices via the strain-mediated magnetoelectric effect. [ABSTRACT FROM AUTHOR]