660 results on '"Yamazaki, Shunpei"'
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2. Controlling lithium cobalt oxide phase transition using molten fluoride salt for improved lithium-ion batteries
3. C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
4. Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
5. High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications
6. VR device with high resolution, high luminance, and low power consumption using 1.50‐in. organic light‐emitting diode display.
7. Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display.
8. 69‐4: Distinguished Paper: High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications.
9. 62‐1: High Performance OLED with Microlens Array, Metal Mask‐Less Lithography, and RGB Side‐by‐Side Patterning.
10. 45‐3: Molecular Design of Blue Phosphorescent Platinum Complexes for Highly Efficient, Long‐Lived Blue Organic Light‐Emitting Diodes.
11. 13‐4: OLED/Organic Photodetector Dual‐Mode Device Integrated into Side‐by‐Side Patterned OLED Display.
12. 13‐2: Organic Light‐Emitting Diode Display Constituted Side‐by‐Side OLED and Organic Photodiode Pixels Integrated in the Same Plane by Adopting MML (Metal Mask‐Less Lithography) Technology.
13. OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
14. 1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
15. 513-ppi OLED Display Using Vertical Oxide Semiconductor Transistor
16. OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography
17. 69‐4: Distinguished Paper:High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications
18. Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c -axis aligned crystalline oxide semiconductor FET.
19. P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
20. P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
21. 43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO
22. 28‐4: 1.50‐Inch, 3207‐ppi OLED Display and Optical System for VR Use
23. 17‐3: An 8.3‐inch 1058‐ppi OLED Display with Side‐by‐Side Pixel Structure Fully Fabricated by Photolithography
24. 48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display
25. A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time.
26. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
27. Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
28. 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS
29. C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
30. 5,291‐ppi OLED display enabled by monolithic integration of C ‐axis‐aligned crystalline IGZO FET and Si CMOS
31. P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS
32. 27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
33. 9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor
34. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
35. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
36. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
37. P‐6: Student Poster: 2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
38. Prototype Lithium-Ion Battery for Low-Temperature
39. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
40. Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
41. 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS
42. Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications
43. Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG
44. Stability of Crystalline IGZO Owing to Minute Crystal Region
45. Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation
46. (Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
47. 20‐3: Ultra‐High‐Performance Blue Fluorescent OLED with Efficiency Over 250 cd/A/CIEy Using Organic Carrier‐Transport Material with Low Refractive Index
48. P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS
49. 19‐4: Ultra‐Long‐Life Deep‐Blue OLED Device Achieved by Controlling the Carrier Recombination Site
50. 9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
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