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4. Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

6. VR device with high resolution, high luminance, and low power consumption using 1.50‐in. organic light‐emitting diode display.

7. Vertical field‐effect transistor using  c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display.

8. 69‐4: Distinguished Paper: High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications.

9. 62‐1: High Performance OLED with Microlens Array, Metal Mask‐Less Lithography, and RGB Side‐by‐Side Patterning.

10. 45‐3: Molecular Design of Blue Phosphorescent Platinum Complexes for Highly Efficient, Long‐Lived Blue Organic Light‐Emitting Diodes.

11. 13‐4: OLED/Organic Photodetector Dual‐Mode Device Integrated into Side‐by‐Side Patterned OLED Display.

12. 13‐2: Organic Light‐Emitting Diode Display Constituted Side‐by‐Side OLED and Organic Photodiode Pixels Integrated in the Same Plane by Adopting MML (Metal Mask‐Less Lithography) Technology.

13. OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers

14. 1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

15. 513-ppi OLED Display Using Vertical Oxide Semiconductor Transistor

16. OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography

17. 69‐4: Distinguished Paper:High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications

18. Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c -axis aligned crystalline oxide semiconductor FET.

19. P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography

20. P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

22. 28‐4: 1.50‐Inch, 3207‐ppi OLED Display and Optical System for VR Use

25. A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time.

26. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating

27. Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

28. 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

33. 9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor

34. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display

35. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

36. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

38. Prototype Lithium-Ion Battery for Low-Temperature

39. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

40. Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm

42. Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications

43. Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG

47. 20‐3: Ultra‐High‐Performance Blue Fluorescent OLED with Efficiency Over 250 cd/A/CIEy Using Organic Carrier‐Transport Material with Low Refractive Index

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