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31 results on '"Yamada, Norihide"'

3. Generating short-wavelength light using a vertical-cavity laser structure

Author

Nakagawa, Shigeru, Mars, Danny E., and Yamada, Norihide

Subjects
Over 21-inch color monitor, 14-inch color monitor, Color monitor, 17-inch color monitor, 21-inch color monitor, 16-inch color monitor, 20-inch color monitor, 19-inch color monitor, Laser, Optical disk drive, 15-inch color monitor, Lasers
Abstract

Second-harmonic generation from a GaAs/AlAs vertical cavity fabricated on a (311)B GaAs substrate has been demonstrated. The experimental results and a theoretical analysis show that a GaAs/AlAs vertical cavity optimized […]

Published
1995

5. Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells.

Author

Minsky, Milan S., Watanabe, Satoshi, and Yamada, Norihide

Subjects
QUANTUM wells, EXCITON theory, PHOTOLUMINESCENCE
Abstract

This paper analyzes a simplified rate equation model of localized exciton emission in GaInN. Expressions for temperature dependent photoluminescence (PL) efficiency and decay time are derived and compared with time integrated (TIPL) and time resolved photoluminescence (TRPL) data for a series of multiquantum well light emitting diodes with varying In composition in the active region. Time resolved photoluminescence is measured up to relatively high temperature (540 K) and a decreasing efficiency coupled with a peak energy decay time that is weakly dependent on temperature is observed. The decay time at peak emission energy begins to decrease at a temperature that depends on the In content in the quantum wells. The analysis developed here demonstrates that application of the expressions τ[sub r]=τ[sub pl]/η and τ[sub nr]=τ[sub pl]/(1-η) is not sufficient to determine radiative and nonradiative lifetimes from TRPL and TIPL data in the GaInN system. (Here τ[sub r] is the radiative decay time, τ[sub nr] is the nonradiative decay time, τ[sub pl] is the measured PL decay time, and η is the measured TIPL intensity normalized to the low temperature intensity.) GaInN with even small amounts of In exhibits highly efficient luminescence due to recombination through localizing centers. As relaxation occurs into both defects and localizing states after initial generation with the above GaInN band gap excitation, the number of carriers arriving at localization centers can change with temperature. This temperature dependent change should be considered when calculating relevant decay times from TRPL and TIPL data. This mechanism is distinct from an increase in the intrinsic radiative decay time obtained by applying conventional analysis to extract radiative and nonradiative lifetimes from TRPL and TIPL data. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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11. Gain switching of GaInN MQW laser diodes.

Author

Marinelli, Claudio, Khrushchev, Igor Y., Rorison, Judy M., Penty, Richard V., White, Ian H., Takeuchi, T., Amano, Hiroshi, Akasaki, Isamu, Kaneko, Y., Watanabe, Satoshi W., Yamada, Norihide, Hasnain, Ghulam, Schneider Jr., Richard P., Wang, Shih-Yuan, and Tan, Michael R. T.

Published
2000
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13. Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

Author

Motoyuki Sato, Motoyuki Sato, primary, Hiroyuki Yaguchi, Hiroyuki Yaguchi, additional, Ichiro Shoji, Ichiro Shoji, additional, Kentaro Onabe, Kentaro Onabe, additional, Ryoichi Ito, Ryoichi Ito, additional, Yasuhiro Shiraki, Yasuhiro Shiraki, additional, Shigeru Nakagawa, Shigeru Nakagawa, additional, and Norihide Yamada, Norihide Yamada, additional

Published
2000
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17. GaN Based Laser Diode with Focused Ion Beam Etched Mirrors

Author

Katoh, Hisaki, primary, Takeuchi, Tetsuya, additional, Anbe, Chitoshi, additional, Mizumoto, Ryuichi, additional, Yamaguchi, Shigeo, additional, Wetzel, Christian, additional, Amano, Hiroshi, additional, Akasaki, Isamu, additional, Kaneko, Yawara, additional, and Yamada, Norihide, additional

Published
1998
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18. Melt-back etching of GaN

Author

Kaneko, Yawara, primary, Yamada, Norihide, additional, Takeuchi, Tetsuya, additional, Yamaoka, Yoshifumi, additional, Amano, Hiroshi, additional, and Akasaki, Isamu, additional

Published
1997
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26. Internal quantum efficiency of highly-efficient In[sub x]Ga[sub 1-x]N-based near-ultraviolet light-emitting diodes.

Author

Watanabe, Satoshi, Yamada, Norihide, Nagashima, Masakazu, Ueki, Yusuke, Sasaki, Chiharu, Yamada, Yoichi, Taguchi, Tsunemasa, Tadatomo, Kazuyuki, Okagawa, Hiroaki, and Kudo, Hiromitsu

Subjects
*LIGHT emitting diodes, *NANOTECHNOLOGY, *SILICON, *QUANTUM optics
Abstract

The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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