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Copper oxides films as promising materials for gas sensors applications were studied. Copper oxide films were deposited onto Si/SiO2 substrates using a citrate sol-gel method with the subsequent temperature treatment at 150-5000C. These films were characterized by means of secondary electron microscopy (SEM) and X-ray-absorption near-edge structure (XANES) spectroscopy. The prepared films were utilized in NO2 sensors. The dependences of the NO2 response on the operating temperature and NO2 concentration (10-200 ppm) were investigated. The maximum NO2 response was achieved for the film annealed at 2500C.

SiOxCuOy thin films were prepared by the deposition on to the Si/SiO2 substrates from the alcoholic solutions employing the sol-gel technique. The various analytic techniques were applied to characterize structure and properties of the films under study . The both X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies showed the presence CuO as well as CuO2 phases and formation of a dual-oxide CuSiO3 with the average crystallites sizes of 35-50 nm. The conductance of the films was rather sensitive to the presence of 1-20 ppm NO2 concentration at the operating temperatures in the range of 20–200 ◦C.