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Defect-free graphene is impermeable to all atoms and ions at ambient conditions. Experiments that can resolve gas flows of a few atoms per hour through micrometre-sized membranes found that monocrystalline graphene is completely impermeable to helium, the smallest of atoms. Such membranes were also shown to be impermeable to all ions, including the smallest one, lithium. On the other hand, graphene was reported to be highly permeable to protons, nuclei of hydrogen atoms. There is no consensus, however, either on the mechanism behind the unexpectedly high proton permeability or even on whether it requires defects in graphene's crystal lattice. Here using high resolution scanning electrochemical cell microscopy (SECCM), we show that, although proton permeation through mechanically-exfoliated monolayers of graphene and hexagonal boron nitride cannot be attributed to any structural defects, nanoscale non-flatness of 2D membranes greatly facilitates proton transport. The spatial distribution of proton currents visualized by SECCM reveals marked inhomogeneities that are strongly correlated with nanoscale wrinkles and other features where strain is accumulated. Our results highlight nanoscale morphology as an important parameter enabling proton transport through 2D crystals, mostly considered and modelled as flat, and suggest that strain and curvature can be used as additional degrees of freedom to control the proton permeability of 2D materials.

Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation (H2O = H+ + OH-) has remained elusive. Here we study the dissociation of interfacial water adjacent to proton-permeable graphene electrodes and observe strong acceleration of the reaction in fields reaching above 10^8 V m-1. The use of graphene electrodes allow measuring the proton currents arising exclusively from the dissociation of interfacial water, while the electric field driving the reaction is monitored through the carrier density induced in graphene by the same field. The observed exponential increase in proton currents is in quantitative agreement with Onsager's theory. Our results also demonstrate that graphene electrodes can be valuable for the investigation of various interfacial phenomena involving proton transport.

Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV electrons. Helium and hydrogen permeate easily through these pores whereas larger species such as xenon and methane are practically blocked. Permeating gases experience activation barriers that increase quadratically with molecules' kinetic diameter, and the effective diameter of the created pores is estimated as ~2 angstroms, about one missing carbon ring. Our work reveals stringent conditions for achieving the long sought-after exponential selectivity using porous two-dimensional membranes and suggests limits on their possible performance.

Research progress on single-layer group III monochalcogenides have been increasing rapidly owing to their interesting physics. Herein, we predict the dynamically stable single-layer forms of XBi (X=Ge, Si, or Sn) by using density functional theory calculations. Phonon band dispersion calculations and ab-initio molecular dynamics simulations reveal the dynamical and thermal stability of predicted nanosheets. Raman spectra calculations indicate the existence of 5 Raman active phonon modes 3 of which are prominent and can be observed in a possible Raman measurement. Electronic band structures of the XBi single-layers investigated with and without spin-orbit coupling effects (SOC). Our results show that XBi single-layers show semiconducting property with the narrow band gap values without SOC. However only the single-layer SiBi is an indirect band gap semiconductor while GeBi and SnBi exhibit metallic behaviors by adding spin-orbit coupling effects. In addition, the calculated linear-elastic parameters indicate the soft nature of predicted monolayers. Moreover, our predictions for the thermoelectric properties of single-layer XBi reveal that SiBi is a good thermoelectric material with increasing temperature. Overall, it is proposed that single-layer XBi structures can be alternative, stable 2D single-layers with their varying electronic and thermoelectric properties.

Motivated by the recent synthesis of two-dimensional $\alpha$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $\alpha$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $\alpha$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures, and how they all differ from bulk through observable Raman spectra. The optical spectra exhibit gradual shift of the prominent peak to higher energy, as well as additional features at lower energy when $\alpha$-Fe$_2$O$_3$ is thinned down to a monolayer. Both optical and electronic properties have strong spin asymmetry, meaning that lower-energy optical and electronic activities are allowed for the single-spin state. Finally, our considerations of magnetic properties reveal that 2D hematite has anti-ferromagnetic ground state for all thicknesses, but the critical temperature for Morin transition increases with decreasing sample thickness. On all accounts, the link to available experimental data is made, and further measurements are prompted.

By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman active modes of the crystals under in-plane biaxial strain. The results are summarized as follows; (i) frequencies of the phonon modes soften (harden) under applied tensile (compressive) strains, (ii) the response of the Raman activities to applied strain for the in-plane and out-of-plane vibrational modes have opposite trends, thus, the built-in strains in the materials can be monitored by tracking the relative activities of those modes, (iii) in particular, the A-peak in single-layer Si and Ge disappear under a critical tensile strain, (iv) especially in mono and di- atomic single-layers, the shift of the peak frequencies is stronger indication of the strain rather than the change in Raman activities, (v) Raman active modes of single-layer ReX 2 (X=S, Se) are almost irresponsive to the applied strain. Strain-induced modifications in the Raman spectrum of 2D materials in terms of the peak positions and the relative Raman activities of the modes could be a convenient tool for characterization.

Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first principles calculations. It was found that both monolayers of Mg(OH)2 and WS 2 are direct-gap semiconductors and these two monolayers form a typical van der Waals heterostructure with a weak interlayer interaction and a type-II band alignment with a staggered gap that spatially seperates electrons and holes. We also showed that an out-of-plane electric field induces a transition from a staggered to a straddling type heterojunction. Moreover, by solving the Bethe-Salpeter equation on top of single shot G0 W0 calculations, we show that the oscillator strength of the intralayer excitons of the heterostructure is an order of magnitude larger than the oscillator strength of the interlayer excitons. Because of the staggered interfacial gap and the field- tunable energy band structure, the Mg(OH)2 -WS2 heterobilayer can become an important candidate for various optoelectronic device applications in nanoscale.

In this study we present a theoretical investigation of structural, electronic and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$) and silver azide (p-AgN$_{3}$) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN$_{3}$ are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$ have negative Poisson's ratio values. On the other hand, the p-AgN$_{3}$ has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B$_{2}$N$_{4}$ are stable, but p-AgN$_{3}$ and p-B$_{4}$N$_{2}$ are vulnerable against vibrational excitations., Comment: 7 pages, 5 figures, J. Appl. Phys. 118, 104303 (2015)