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Your search keyword '"Yadvish, R.D."' showing total 23 results
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23 results on '"Yadvish, R.D."'

3. Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp

Author

Park, Y.K., primary, Nguyen, T.V., additional, Morton, P.A., additional, Johnson, J.E., additional, Mizuhara, O., additional, Jeong, J., additional, tzeng, L.D., additional, Yeates, P.D., additional, Fullowan, T., additional, Sciortino, P.F., additional, Sergent, A.M., additional, Tsang, W.T., additional, and Yadvish, R.D., additional

Published
1996
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16. Strained quaternary quantum well lasers for high temperature operation.

Author

Temkin, H., Coblentz, D., Logan, R.A., Vanderberg, J.M., Yadvish, R.D., and Sergent, A.M.

Subjects
LASERS, QUANTUM wells, GALLIUM compounds
Abstract

Investigates strained quaternary quantum well lasers optimized for high temperature operation. Effects of temperature ranging from 25 to 85 degree Celsius on the slope efficiency of the lasers; Light-current characteristics of a strained gallium-indium-arsenic-phosphorus quantum well laser; Structural parameters of the multiquantum well lasers.

Published
1993
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17. High temperature characteristics of InGaAsP/InP laser structures.

Author

Temkin, H., Coblentz, D., Logan, R.A., van der Ziel, J.P., Tanbun-Ek, T., Yadvish, R.D., and Sergent, A.M.

Subjects
SEMICONDUCTOR lasers, PHOSPHIDES, MATERIALS at high temperatures
Abstract

Investigates the high temperature performance of indium gallium arsenic phosphide laser operating at a wavelength of 1.3 micrometer. Comparison between conventional separate confinement heterostructure and compressively strained multiquantum well structure; Link between threshold gain and operating temperature.

Published
1993
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18. Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy.

Author

Cotta, M.A., Hamm, R.A., Staley, T.W., Yadvish, R.D., Harriott, L.R., and Temkin, H.

Subjects
LAYER structure (Solids), MOLECULAR beam epitaxy, SCANNING force microscopy
Abstract

Examines the edge growth rate enhancement of indium phosphide and lattice matched indium gallium arsenide layers grown on silica-masked InP substrate. Growth of the sample by metalorganic molecular beam epitaxy; Use of scanning force microscopy; Dependence of the migration length on metalorganic and hydride flows.

Published
1993
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19. Metalorganic molecular beam epitaxy of 1.3 mum quaternary layers and heterostructure lasers.

Author

Hamm, R.A., Ritter, D., Temkin, H., Panish, M.B., Vandenberg, J.M., and Yadvish, R.D.

Subjects
MOLECULAR beam epitaxy, LAYER structure (Solids)
Abstract

Investigates the metalorganic molecular beam epitaxy of indium gallium arsenic phosphide quaternary layers. Dependence of gallium incorporation on the growth temperature; Increase of photoluminescence linewidth; Measurement of the threshold current densities.

Published
1991
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