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Here, we develop a framework for the prediction and screening of native defects and functional impurities in a chemical space of Group IV, III-V, and II-VI zinc blende (ZB) semiconductors, powered by crystal Graph-based Neural Networks (GNNs) trained on high-throughput density functional theory (DFT) data. Using an innovative approach of sampling partially optimized defect configurations from DFT calculations, we generate one of the largest computational defect datasets to date, containing many types of vacancies, self-interstitials, anti-site substitutions, impurity interstitials and substitutions, as well as some defect complexes. We applied three types of established GNN techniques, namely Crystal Graph Convolutional Neural Network (CGCNN), Materials Graph Network (MEGNET), and Atomistic Line Graph Neural Network (ALIGNN), to rigorously train models for predicting defect formation energy (DFE) in multiple charge states and chemical potential conditions. We find that ALIGNN yields the best DFE predictions with root mean square errors around 0.3 eV, which represents a prediction accuracy of 98 % given the range of values within the dataset, improving significantly on the state-of-the-art. Models are tested for different defect types as well as for defect charge transition levels. We further show that GNN-based defective structure optimization can take us close to DFT-optimized geometries at a fraction of the cost of full DFT. DFT-GNN models enable prediction and screening across thousands of hypothetical defects based on both unoptimized and partially-optimized defective structures, helping identify electronically active defects in technologically-important semiconductors.

This paper reports an effective method of stabilizing ultrathin Silver (Ag) films on substrates using a filler metal (Zn). Ag films with a thickness < 15 nm were deposited by DC magnetron sputtering above a Zn filler metal on glass, quartz, silicon and PET (polyethylene terephthalate) substrates. Zinc is expected to partially or fully fill the roughness associated with the substrates. The Zn filler material and ultrathin Ag film form a 3-D augmented atomically chemically graded interface. 3-D interfaces have smoothly varying chemistry. The ability of Zn to partially or fully fill the substrate roughness improves the adhesion of Zn along with the Ag to the substrate. Also, Zn acts as a barrier layer against the diffusion of Ag into the substrate. This technique leads to ultrathin Ag films with low sheet resistance (~ 3 {\Omega}/Sq.), low mean absolute surface roughness (~1 nm), good optical transparency (~ 65 %), better stability and compatibility with the environment. The results indicate significant potential for applying stable ultrathin Ag film/electrode as a practical and economically feasible design solution for optoelectronic (transparent and conductive electrodes for solar cells and LEDs) and plasmonic devices. This film shows good conductivity, transparency, stability, and flexibility., Comment: 16 pages,8 figures, 3 tables

The preference for the occupation of solute atoms like B, C, N, and O at various sites in iron is generally explained by the size of the solute and the volume available for the solute atoms to occupy. Such an explanation based on the size of solute atoms and available space at the occupation site assumes that distortion alone dictates the stability of solute atoms. Using first-principles density functional theory (DFT), we separately calculate the distortion energy (DE) and electronic binding energy (EBE) of solute atoms in iron. We show that electronic binding dictates the relative stability of O rather than distortion. In contrast, the relative stability of B, C, and N is dictated by the distortion it exerts on iron atoms. Contribution to the relative stability of B atoms is dictated mostly by distortion. It suggests that B could occupy a large volume region like grain boundaries. The same agrees with experiments indicating B segregates at grain boundaries and planar defects. Such conclusions could not have been drawn from the formation energy calculation, which shows that B is stable at the substitution site., Comment: 8 pages,2 figures

Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) analysis, Raman spectroscopy, UV-Vis spectroscopy, and four-probe sheet resistance measurements are used to characterize the surface morphology, structural, optical, and electrical properties respectively. Deposition is carried out at room temperature and between 200 and 300 {\deg}C. XRD analysis indicates that the oxide formed is primarily Cu$_2$O and the absorption spectra show the films have a critical absorption edge at around 300 nm. The sheet resistance gradually decreases with increase in deposition temperature thereby increasing the conductivity of these thin films. Also observed is the increase in band gap from 2.20 eV for room temperature deposition to 2.35 eV at 300 {\deg}C. The optical band gap and the variation of sheet resistance with temperature shows that the microstructure plays a vital role in their behavior. These transformation characteristics are of huge technological importance having variety of applications including transparent solar cell fabrication., Comment: 9 pages, 4 figures, and 2 tables

Interface by definition is two-dimensional (2-D) as it separates 2 phases with an abrupt change in structure and chemistry across the interface. The interface between a metal and its nitride is expected to be atomically sharp, as chemical gradation would require the creation of N vacancies in nitrides and N interstitials in metal. Contrary to this belief, using first-principles density functional theory (DFT), we establish that the chemically graded Ti/TiN interface is thermodynamically preferred over the sharp interface. DFT calculated N vacancy formation energy in TiN is 2.4 eV, and N interstitial in Ti is -3.8 eV. Thus, diffusion of N from TiN to Ti by the formation of N vacancy in TiN and N interstitial in Ti would reduce the internal energy of the Ti-TiN heterostructure. We show that diffusion of N is thermodynamically favorable till ~23% of N has diffused from TiN to Ti, resulting in an atomically chemically graded interface, which we refer to as a 3-D interface. Experiments' inability to identify a 3-D interface in Ti/TiN could be attributed to limitations in identifying chemical composition and structure with atomic-level resolution at interfaces. We define the sum of N vacancy formation energy and N interstitial formation energy as driving-force, which could be used as a convenient way to assess the possibility of forming a 3-D interface in metal/ceramic heterostructures. We also show gradual variation in lattice parameters and mechanical properties (like bulk modulus, shear modulus, Young's modulus, and hardness) across the Ti/TiN interface. 3-D interfaces open a new way to control properties of metal/ceramic heterostructures, in line with the already established advantage of gradation at interfaces in micrometer length scale. For widely explored Ti/TiN multilayer nano-heterostructures, the possibility of forming 3-D interface could lead to enhanced wear and erosion resistance.

Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0-1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.