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Interface models of diamond-coated cemented carbide tool WC-Co / SiC/ Diamond with Co mass fraction of 6%, 8%, 10% and 12% were constructed. The influences of different deposition temperatures on the interface bonding strength were simulated with the molecular dynamics method, and the reasons were analyzed from perspectives of adhesion work and bond length distribution. The adhesion work analysis indicates that, compared with the other three Co content interface models, the two interfaces in WC-6% Co / SiC/ Diamond interface model have the highest adhesion work values at seven deposition temperatures. At different deposition temperatures, both interfaces of WC-6% Co / SiC and SiC/ Diamond in WC-6% Co / SiC/ Diamond have the highest adhesion work values of 2. 468 and 5. 394 J / m² at 1 123 and 1 173 K, respectively. The analysis results of bond length distribution indicate that, at any deposition temperature, compared with the other three Co content interface models, the maximum value of the bond length distribution range at each interface of WC-6% Co / SiC/ Diamond is smaller. The interface model obtained by sequentially depositing SiC layer on WC-6%Co substrate at 1 123 K and diamond coating on SiC layer at 1 173 K has the shortest interface bond length, the largest bond energy, and the best interface bonding property. Key words: diamond-coated cemented carbide; WC-Co / SiC/ Diamond; deposition temperature; Co content; interface [ABSTRACT FROM AUTHOR]

This study performed first-principle-based calculations of the interface adhesion work in interface models of three terminal systems: CrAlSiNSi/WC-Co, CrAlSiNN/WC-Co, and CrAlSiNAl/WC-Co. The results proved that the CrAlSiNSi/WC-Co and CrAlSiNAl/WC-Co interface models had the highest and lowest interface adhesion work values (4.312 and 2.536 J·m−2), respectively. Thus, the latter model had the weakest interface bonding property. On this basis, rare earth oxides CeO2 and Y2O3 were doped into the Al terminal model (CrAlSiNAl/WC-Co). Then, doping models of CeO2 and Y2O3 doped on the WC/WC, WC/Co, and CrAlSiNAl/WC-Co interfaces were established. The adhesion work value was calculated for the interfaces in each doping model. When CeO2 and Y2O3 were doped in the WC/WC and CrAlSiNAl/WC-Co interfaces, four doping models were constructed, each model contains interfaces withreduced adhesion work values, indicating deteriorated interface bonding properties. When the WC/Co interface was doped with CeO2 and Y2O3, the interface adhesion work values of the two doping models are both increased, and Y2O3 doping improved the bonding properties of the Al terminal model (CrAlSiNAl/WC-Co) more significantly than CeO2 doping. Next, the charge density difference and the average Mulliken bond population were estimated. The WC/WC and CrAlSiNAl/WC-Co interfaces doped with CeO2 or Y2O3, with decreased adhesion work, exhibited low electron cloud superposition and reduced values of charge transfer, average bond population, and interatomic interaction. When the WC/Co interface was doped with CeO2 or Y2O3, superposition of the atomic charge densities of electron clouds was consistently observed at the CrAlSiNAl/WC-Co interface in the CrAlSiNAl/WC/CeO2/Co and CrAlSiNAl/WC/Y2O3/Co models; the atomic interactions were strong, and the interface bonding strength increased. When the WC/Co interface was doped with Y2O3, the superposition of atomic charge densities and the atomic interactions were stronger than for CeO2 doping. In addition, the average Mulliken bond population and the atomic stability were also higher, and the doping effect was better. [ABSTRACT FROM AUTHOR]

Based on the first-principles method, TiAlSiN/WC-Co interface models with graphene doped into the matrix, coating, and the coating/matrix are constructed. The interface adhesion work is calculated and modeled to study the interface bonding properties from the atomic microscopic point of view. The results show that the interface bonding properties of TiAlSiN/WC-Co can be improved when the matrix is doped with the main surface of intrinsic graphene, and the interface bonding property of TiAlSiNN/WC-Co can be improved when the coating and coating/matrix are doped separately with the main surface of intrinsic graphene or single vacancy defective graphene. Furthermore, the model electronic structures are analyzed. The results show that there exist strong Si/Co and N/Co covalent bonds in the interfaces when the matrix is doped with the main surface of intrinsic graphene, which causes the adhesion work of TiAlSiN/WC/msGR/Co to be greater than that of TiAlSiN/WC-Co. Additionally, when the graphene is doped into the coating, in the interface of TiAlSiN/msGR/TiAlSiNN/WC-Co, there exist strong N/Co covalent bonds that increase the interface adhesion work. Additionally, more charge transfer and orbital hybridization exist in the coating/matrix interface doped with the main surface of intrinsic graphene or single vacancy defective graphene, which explains the essential mechanism that the adhesion work of TiAlSiNN/msGR/WC-Co is greater than that of TiAlSiNN/WC-Co, and the adhesion work of TiAlSiNN/svGR/WC-Co is greater than that of TiAlSiNN/WC-Co. [ABSTRACT FROM AUTHOR]