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CePtSi2 was reported to exhibit an antiferromagnetic order below T*=1.8 K at ambient pressure, a valence state change at ~1.2 GPa, and superconductivity in the range between 1.4 and 2.1 GPa with the maximum transition temperature of 0.14 K [T. Nakano et al., Phys. Rev. B 79, 172507 (2009)]. We have performed polycrystalline and single crystal neutron diffraction experiments to determine the magnetic structure under ambient and high pressures. We found that incommensurate magnetic peaks with the magnetic propagation vector of (0.32, 0, 0.11) at ambient pressure below T_{SDW}~1.25 K. Those magnetic peaks which originate from a spin-density-wave order with the easy axis along the c axis and an averaged ordered moment of 0.45(5) mu_B, suggesting that there may be an intermediate phase between T* and T_{SDW}. Applying pressures, the magnetic propagation vector shows no change and the magnetic order disappears around 1.0 GPa, which is much lower than the critical pressure for the superconducting phase. The results suggest that other than magnetic fluctuations may play a primary role in the superconducting pairing mechanism., 6 pages, 6 figures

The recently discovered kagome superconductors $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) possess a unique band structure with van Hove singularities and Dirac dispersions, in which unusual charge-density-wave (CDW) orders with time-reversal and rotational symmetry breaking have been reported. One of the most crucial unresolved issues is identifying the symmetry of the superconductivity that develops inside the CDW phase. Theory predicts a variety of unconventional superconducting symmetries, including exotic states with chiral and topological properties accompanied by a sign-changing superconducting gap. Experimentally, however, the phase information on the superconducting gap in $A$V$_3$Sb$_5$ is still lacking. Here we report the electron irradiation effects in CsV$_3$Sb$_5$ using introduced impurities as a phase-sensitive probe of superconductivity. Our magnetic penetration depth measurements reveal that with increasing impurities, a highly anisotropic fully-gapped state changes gradually to an isotropic full-gap state without passing through a nodal state. Furthermore, transport measurements under high pressure show that the double superconducting dome in the pressure-temperature phase diagram survives against sufficient impurities. These results are strong bulk evidence that CsV$_3$Sb$_5$ is a non-chiral, anisotropic $s$-wave superconductor with no sign change both at ambient and high pressure, which provides a clue to understanding the relationship between CDW and superconductivity in kagome superconductors., Comment: 22 pages, 4 figures

CsV_{3}Sb_{5} is a newly discovered Z_{2} topological kagome metal showing the coexistence of a charge-density-wave (CDW)-like order at T^{*}=94 K and superconductivity (SC) at T_{c}=2.5 K at ambient pressure. Here, we study the interplay between CDW and SC in CsV_{3}Sb_{5} via measurements of resistivity, dc and ac magnetic susceptibility under various pressures up to 6.6 GPa. We find that the CDW transition decreases with pressure and experience a subtle modification at P_{c1}≈0.6-0.9 GPa before it vanishes completely at P_{c2}≈2 GPa. Correspondingly, T_{c}(P) displays an unusual M-shaped double dome with two maxima around P_{c1} and P_{c2}, respectively, leading to a tripled enhancement of T_{c} to about 8 K at 2 GPa. The obtained temperature-pressure phase diagram resembles those of unconventional superconductors, illustrating an intimated competition between CDW-like order and SC. The competition is found to be particularly strong for the intermediate pressure range P_{c1}≤P≤P_{c2} as evidenced by the broad superconducting transition and reduced superconducting volume fraction. The modification of CDW order around P_{c1} has been discussed based on the band structure calculations. This work not only demonstrates the potential to raise T_{c} of the V-based kagome superconductors, but also offers more insights into the rich physics related to the electron correlations in this novel family of topological kagome metals.

OBJECTIVE: To measure the global impact of COVID-19 pandemic on volumes of IV thrombolysis (IVT), IVT transfers, and stroke hospitalizations over 4 months at the height of the pandemic (March 1 to June 30, 2020) compared with 2 control 4-month periods. METHODS: We conducted a cross-sectional, observational, retrospective study across 6 continents, 70 countries, and 457 stroke centers. Diagnoses were identified by their ICD-10 codes or classifications in stroke databases. RESULTS: There were 91,373 stroke admissions in the 4 months immediately before compared to 80,894 admissions during the pandemic months, representing an 11.5% (95% confidence interval [CI] -11.7 to -11.3, p < 0.0001) decline. There were 13,334 IVT therapies in the 4 months preceding compared to 11,570 procedures during the pandemic, representing a 13.2% (95% CI -13.8 to -12.7, p < 0.0001) drop. Interfacility IVT transfers decreased from 1,337 to 1,178, or an 11.9% decrease (95% CI -13.7 to -10.3, p = 0.001). Recovery of stroke hospitalization volume (9.5%, 95% CI 9.2-9.8, p < 0.0001) was noted over the 2 later (May, June) vs the 2 earlier (March, April) pandemic months. There was a 1.48% stroke rate across 119,967 COVID-19 hospitalizations. Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection was noted in 3.3% (1,722/52,026) of all stroke admissions. CONCLUSIONS: The COVID-19 pandemic was associated with a global decline in the volume of stroke hospitalizations, IVT, and interfacility IVT transfers. Primary stroke centers and centers with higher COVID-19 inpatient volumes experienced steeper declines. Recovery of stroke hospitalization was noted in the later pandemic months. © 2021 American Academy of Neurology.

The interplay among magnetism, electronic nematicity, and superconductivity is the key issue in strongly correlated materials including iron-based, cuprate, and heavy-fermion superconductors. Magnetic fluctuations have been widely discussed as a pairing mechanism of unconventional superconductivity, but recent theory predicts that quantum fluctuations of nematic order may also promote high-temperature superconductivity. This has been studied in FeSe1−xSx superconductors exhibiting nonmagnetic nematic and pressure-induced antiferromagnetic orders, but its abrupt suppression of superconductivity at the nematic end point leaves the nematic-fluctuation driven superconductivity unconfirmed. Here we report on systematic studies of high-pressure phase diagrams up to 8 GPa in high-quality single crystals of FeSe1−xTex. When Te composition x(Te) becomes larger than 0.1, the high-pressure magnetic order disappears, whereas the pressure-induced superconducting dome near the nematic end point is continuously found up to x(Te) ≈ 0.5. In contrast to FeSe1−xSx, enhanced superconductivity in FeSe1−xTex does not correlate with magnetism but with the suppression of nematicity, highlighting the paramount role of nonmagnetic nematic fluctuations for high-temperature superconductivity in this system., Despite studies in FeSe1−xSx, it is yet unconfirmed whether nematic fluctuation can induce superconductivity. Here, the authors study single crystals of FeSe1−xTex showing enhanced superconductivity upon suppression of nematicity.

LiOsO3 is a strongly correlated metal that undergoes a nonpolar to polar transition at the critical temperature (T s) of 140 K. Complementary to previous studies of structure, Raman, and resistivity under high pressure (P), here we map out a complete pressure evolution of T s(P) via high-pressure resistance measurements up to 18.5 GPa by using a low-temperature multianvil apparatus. Our results show that T s(P) first increases linearly with pressure at a large slope as reported and then levels off gradually at pressures above 10 GPa when approaching room temperature (295 K). Interestingly, we find that the resistance R(T) of LiOsO3 at 18.5 GPa in the polar R3c phase exhibits a distinct temperature profile in comparison with those at lower pressures, signaling the possible occurrence of pressure-driven new electronic phase. The critical pressure for this transition is determined to be P c ≈ 16.8(1) GPa based on the pressure-dependent resistance measurement at room temperature.

We study the effect of hydrostatic pressure on the electrical transport, magnetic, and structural properties of $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}$ by measuring its resistivity, Hall effect, and x-ray diffraction under pressures up to 12.8 GPa supplemented by the first-principles calculations. At ambient pressure, $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}$ shows a metallic conducting behavior with a cusplike anomaly at around ${T}_{\mathrm{N}}\ensuremath{\approx}24\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, where it undergoes a long-range antiferromagnetic (AF) transition. With increasing pressure, ${T}_{\mathrm{N}}$ determined from the resistivity anomaly first increases slightly with a maximum at around 2 GPa and then decreases until vanishing completely at about 7 GPa. Intriguingly, its resistivity is enhanced gradually by pressure and even evolves from metallic to semimetal or semiconductinglike behavior as ${T}_{\mathrm{N}}$ is suppressed. However, the density of the $n$-type charge carrier that remains dominant under pressure increases with pressure. In addition, the interlayer AF coupling seems to be strengthened under compression, since the critical field ${H}_{\mathrm{c}1}$ for the spin-flop transition to the canted AF state is found to increase with pressure. No structural transition was evidenced up to 12.8 GPa, but some lattice softening was observed at about 2 GPa, signaling the occurrence of an electronic transition or crossover from a localized to itinerant state. We have rationalized these experimental findings by considering the pressure-induced enhancement of antiferromagnetic/ferromagnetic competition and partial delocalization of $\mathrm{Mn}\text{\ensuremath{-}}3d$ electrons, which not only destroys long-range AF order but also promotes charge-carrier localization through enhanced spin fluctuations and/or the formation of a hybridization gap at high pressure.

The n-type HgCr_{2}Se_{4} exhibits a sharp semiconductor-to-metal transition (SMT) in resistivity accompanying the ferromagnetic order at T_{C}=106 K. Here, we investigate the effects of pressure and magnetic field on the concomitant SMT and ferromagnetic order by measuring resistivity, dc and ac magnetic susceptibility, as well as single-crystal neutron diffraction under various pressures up to 8 GPa and magnetic fields up to 8 T. Our results demonstrate that the ferromagnetic metallic ground state of n-type HgCr_{2}Se_{4} is destabilized and gradually replaced by an antiferromagnetic, most likely a spiral magnetic, and insulating ground state upon the application of high pressure. On the other hand, the application of external magnetic fields can restore the ferromagnetic metallic state again at high pressures, resulting in a colossal magnetoresistance (CMR) as high as ∼ 3×10^{11}% under 5 T and 2 K at 4 GPa. The present study demonstrates that n-type HgCr_{2}Se_{4} is located at a peculiar critical point where the balance of competition between ferromagnetic and antiferromagnetic interactions can be easily tipped by external stimuli, providing a new platform for achieving CMR in a single-valent system.

RbGd

Superconducting properties of Cr0.0005NbSe2 (Tc~6.64 K) single crystals have been investigated through the temperature dependent resistivity (~8 GPa) and DC magnetization (~1 GPa) measurements. Further, the critical current density (Jc) as a function of applied magnetic field has been studied from magnetic isotherms. The vortex pinning mechanisms have also been systematically analyzed using weak collective pinning theory as a function of pressure. The Jc corresponds to the flux flow enhanced by the application of pressure due to increase of Tc and vortex changes. We found that the pressure is responsible for the spatial variations in the charge carrier mean free path (δl pinning). We find that core point pinning is more dominant than surface pinning which is caused by the application of pressure. In addition, Jc(H = 0) increases from 3.9 × 105 (0 GPa) to 1.3 × 106 (1.02 GPa) A/cm2 at 2 K as the pressure is increased from normal pressure to 1.02 GPa. The pressure dependence of Tc (dTc/dP) becomes 0.91 K/GPa and 0.75 K/GPa from magnetization and resistivity measurements respectively. We found that the pressure promotes the anisotropy nature, and decrease of coherence length and resulting in pathetic interface of the vortex core with pinning centers.

K

A fundamental issue concerning iron-based superconductivity is the roles of electronic nematicity and magnetism in realising high transition temperature (T c). To address this issue, FeSe is a key material, as it exhibits a unique pressure phase diagram involving non-magnetic nematic and pressure-induced antiferromagnetic ordered phases. However, as these two phases in FeSe have considerable overlap, how each order affects superconductivity remains perplexing. Here we construct the three-dimensional electronic phase diagram, temperature (T) against pressure (P) and isovalent S-substitution (x), for FeSe1−xSx. By simultaneously tuning chemical and physical pressures, against which the chalcogen height shows a contrasting variation, we achieve a complete separation of nematic and antiferromagnetic phases. In between, an extended non-magnetic tetragonal phase emerges, where T c shows a striking enhancement. The completed phase diagram uncovers that high-T c superconductivity lies near both ends of the dome-shaped antiferromagnetic phase, whereas T c remains low near the nematic critical point., The overlap between different phases has hindered the understanding of how each phase affects superconductivity in FeSe. Here, Matsuura et al. achieve a complete separation of non-magnetic nematic and antiferromagnetic phases for FeSe1-xSx, observing a tetragonal phase in between with a strikingly enhanced T c.

The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (T_{c}). However, the absence of hole pockets near the Fermi level of the iron-selenide (FeSe) derived high-T_{c} superconductors raises a fundamental question of whether iron pnictides and chalcogenides have different pairing mechanisms. Here, we study the properties of electronic structure in the high-T_{c} phase induced by pressure in bulk FeSe from magnetotransport measurements and first-principles calculations. With increasing pressure, the low-T_{c} superconducting phase transforms into the high-T_{c} phase, where we find the normal-state Hall resistivity changes sign from negative to positive, demonstrating dominant hole carriers in contrast to other FeSe-derived high-T_{c} systems. Moreover, the Hall coefficient is enlarged and the magnetoresistance exhibits anomalous scaling behaviors, evidencing strongly enhanced interband spin fluctuations in the high-T_{c} phase. These results in FeSe highlight similarities with high-T_{c} phases of iron pnictides, constituting a step toward a unified understanding of iron-based superconductivity.

The effect of high pressure (up to 8 GPa) on normal and superconducting state properties of PrFeAsO0.6F0.12, an 1111-type iron based superconductor close to optimal doped region, has been investigated by measuring the temperature dependence of resistivity. Initially, the superconducting transition temperature (T c) is observed to increase slowly by about 1 K as pressure (P) increases from 0 to 1.3 GPa. With further increase in pressure above 1.3 GPa, T c decreases at the rate of ~1.5 K/GPa. The normal-state resistivity decreases monotonically up to 8 GPa. We have also measured the pressure dependence of magnetization (M) on the same piece of PrFeAsO0.6F0.12 sample up to 1.1 GPa and observed T c as well as the size of the Meissner signal to increase with pressure in this low-pressure region. In contrast, for an over-doped PrFeAsO0.6F0.14 sample, magnetization measurements up to 1.06 GPa show that both T c and the Meissner signal decrease with pressure. The present study clearly reveals two distinct regions in the dome-shaped (T c-P) phase diagram of PrFeAsO0.6F0.12.

The high pressure effect on resistance of the LB film of ditetradecyldimethylammonium-Au(dmit)2 [2C14N+Me2-Au(dmit)2] salt has been investigated; the measurements were performed down to 0.8 K and pressures up to 1.03 GPa using a clamptype pressure cell. The resistance gradually decreases with increasing pressure reaching a 57% smaller value at 1.03 GPa compared to the ambient one. The resistance increases with decreasing temperature for three different conditions of the measurement: at 0 GPa and under pressure (clamped at 0.80 GPa and 1.03 GPa) in the temperature range of 18−295 K. Over the whole temperature range, the higher the pressure is, the lower the sheet resistance is, indicating that the application of pressure is effective to reduce the sheet resistance. Although we have already reported the magnetic anomaly suggesting the Meissner state in the LB film below 3.9 K, no resistance drop is observed even if the resistance was measured down to 0.8 K.

The A-site ordered perovskite (AA(3)')B(4)O(12) can accommodate transition metals on both A' and B sites in the crystal structure. Because of this structural feature, it is possible to have narrow-band electrons interacting with broadband electrons from different sublattices. Here we report a new A-site ordered perovskite (CaCu(3))Ir(4)O(12) synthesized under high pressure. The coupling between localized spins on Cu(2+) and itinerant electrons from the Ir-O sublattice makes Kondo-like physics take place at a temperature as high as 80 K. Results from the local density approximation calculation have confirmed the relevant band structure. The magnetization anomaly found at 80 K can be well rationalized by the two-fluid model.

Irradiation damage in n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial diodes and heterojunction bipolar transistors (HBTs) by protons is studied as a function of germanium content, proton fluence and energy for the first time. The degradation of the electrical performance of devices increases with increasing fluence, while it decreases with increasing germanium content and energy. The induced lattice defects in the Si/sub 1-x/Ge/sub x/ epitaxial layers and the Si substrate are studied by DLTS methods. In the Si/sub 1-x/Ge/sub x/ epitaxial layers for diodes, electron capture levels associated with interstitial boron complex are induced by irradiation, while two electron capture levels corresponding to the E center and the divacancy are observed in the collector region of the HBTs. The influence of the radiation source on device degradation is then discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects. In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300/spl deg/C. Based on the recovery of electrical performance, it is pointed out that the electron capture levels induced in the Si/sub 1-x/Ge/sub x/ epitaxial layers are mainly responsible for the increase of reverse diode current.

We report the discovery of a pressure-induced heavy fermion superconductivity in a nonmagnetic orbital ordering state in the cubic compound PrTi(2)Al(20). In particular, we found that the transition temperature and the effective mass associated with the superconductivity are dramatically enhanced as the system approaches the putative quantum critical point of the orbital order. Our experiment indicates that the strong orbital fluctuations may provide a nonmagnetic glue for Cooper pairing.

We report a comprehensive high-pressure study on the triple-layer T'-La4Ni3O8 with a suite of experimental probes, including structure determination, magnetic, and transport properties up to 50 GPa. Consistent with a recent ab inito calculation, application of hydrostatic pressure suppresses an insulator-metal spin-state transition at P(c)≈6 GPa. However, a low-spin metallic phase does not emerge after the high-spin state is suppressed to the lowest temperature. For P20 GPa, the ambient T' structure transforms gradually to a T(†)-type structure, which involves a structural reconstruction from fluorite La-O2-La blocks under low pressures to rock-salt LaO-LaO blocks under high pressures. Absence of the metallic phase under pressure has been discussed in terms of local displacements of O2- ions in the fluorite block under pressure before a global T(†) phase is established.

Studies of the structure, magnetization, and resistivity under pressure on stoichiometric normal spinel Co[V(2)]O(4) single crystals show (i) absence of a structural distortion, (ii) abnormal magnetic critical exponents, and (iii) metallic conductivity induced by pressures at low temperatures. All these results prove that Co[V(2)]O(4) sits on the edge of the itinerant-electron limit. Compared with similar measurements on Fe[V(2)]O(4) and other A[V(2)]O(4) studies, it is shown that a critical V-V separation for a localized-itinerant electronic phase transition exists.

We report a novel superconducting (SC) and antiferromagnetic (AF) hybrid state in SrFe(2)As(2) revealed by (75)As nuclear magnetic resonance (NMR) experiments on a single crystal under highly hydrostatic pressure up to 7 GPa. The NMR spectra at 5.4 GPa indicate simultaneous development of the SC and AF orders below 30 K. The nuclear spin-lattice relaxation rate in the SC domains shows a substantial residual density of states, suggesting proximity effects due to the spontaneous formation of a nanoscale SC-AF hybrid structure. This entangled behavior is a remarkable example of a self-organized heterogeneous structure in a clean system.

We have developed the submillimeter wave ESR measurement system under pressure up to 3.5 kbar using the transmission technique. This system has the advantages that the pulsed magnetic field up to 16 T and the wide frequency region up to 670 GHz are available. The pressure is generated by the clamped-type pressure cell whose inner parts are all made by the sapphire. We applied this system to the study of the quantum spin-gap system KCuCl/sub 3/ and obtained the direct evidence that the gap energy of this compound decreased under pressure.