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Purpose: The objective of this study is the development and evaluation of the usability of an educational programme that teaches disaster preparedness to pregnant women. Methods: This intervention study examined an intervention group that attended an educational programme and a control group that did not. The subjects were pregnant women in their second trimester. The programme was developed with prior studies and evaluated by self-administered questionnaires that asked about disaster preparedness. The questionnaire was administered twice to the participants in both groups: to the intervention group just before the childbirth class and 1 month after the class, and to the control group at the time of their maternity examination and 1 month afterwards. Two hundred twenty-six members of the intervention group and 262 members of the control group responded to both questionnaires. Of these, 99 of the intervention group and 104 of the control group were primiparous without disaster experience, and the programme was evaluated by comparing these two groups. Effects due to the disaster experience were also analysed within the intervention group. Results: Among primiparous without disaster experience, an intervention effect was found in items concerning awareness modification (five of six items) and behaviour modification (three of seven items). The intervention effect was particularly pronounced in a comparison of primiparous without disaster experience. Conclusions: An intervention effect was found among the pregnant women who took the programme. In particular, it was statistically significant among primiparous without disaster experience, which suggests that the programme should be shaped to reflect this subject demographic. Language: en

Three-dimensional zinc mapping based on X-ray K-edge scanning has been performed. By microtomographies with energies above and below the K-absorption edges of the elements, the concentration distribution of the elements is evaluated during in-situ experiments, respectively. It is found that the Zn concentration distribution during the heat treatment was changed inside the cell wall of the aluminum foams and it has been homogenized. Also several precipitated phase transformation can be three-dimensionally visualized by the CT-method tuning X-ray energies.

For the purpose of determining the appropriate conditions of application to increase the size of a hardy kiwifruit, Actinidia arguta ‘Mitsuko’, N1-(2-chloro-4-pyridyl)-N3-phenylurea (CPPU) was applied at three different growth stages of the crop: at petal fall, 10 and 25 days after petal fall (DAPF), and three different concentrations: 1, 5 and 10 mg l−1. A significant increase in fruit size was obtained by treatment at the concentrations of 5–10 mg l−1 and at 10 DAPF. The fruit weight doubled. Although a significant reduction in the concentrations of total soluble solids (TSS), titratable acids (TA) and ascorbic acid (AsA) in the CPPU-treated fruits was recorded, the TSS/TA ratio and AsA content per fruit increased by the treatment. CPPU application at petal fall induced abnormally protruding fruit tip.

Results are presented of a study on the radiation damage in n-MOSFETs fabricated in a 0.8 μm single-well BiCMOS process, subjected to 20-MeV protons. A comparison is made with the degradation behavior induced by γ-ray irradiation. Finally, the recovery under post-irradiation thermal annealing is also reported.

Results of a detailed study of the effects of high-temperature γ-ray and electron irradiation on the performance degradation of Si pin photodiodes are presented. The macroscopic device performance will be correlated with the radiation-induced defects, observed by DLTS. After irradiation, two majority electron capture levels with ( E c −0.22 eV) and ( E c −0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with ( E v +0.37 eV) was found. It was found that the dark current increases after irradiation, while the photo current decreases. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. At 200°C irradiation, the reduction of the photocurrent is only 10% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.

Results of a study are presented on the degradation of InGaAsP laser diodes by high-temperature γ-ray and electron irradiation. It is shown that the optical power decreases after irradiation. One hole trap is observed in the In0.76Ga0.24As0.55P0.45 multi-quantum well active region after room-temperature γ- or e−-irradiation. The deep levels are thought to be associated with the Ga-vacancy. The decrease of the optical power is ascribed to the carrier removal and to the mobility reduction by carrier scattering, through the induced lattice defects. The change of device performance and the introduction rate of lattice defects decrease with increasing irradiation temperature. The optical power after a 200°C irradiation is nearly identical as before, for the fluence range studied.

Results of an extensive study on the irradiation damage and its recovery behavior resulting from thermal annealing in AlGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs) subjected to a 220-MeV carbon, 1-MeV electrons and 1-MeV fast neutrons are presented. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The decrease of the drain current and mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas region. Isochronal thermal annealing shows that the device performance degraded by the irradiation recovers. The decreased drain current for output characteristics recovers by 75% of pre-rad value after 300°C thermal annealing for AlGaAs HEMTs irradiated by carbon particles with a fluence of 1×10 12 cm −2 . The influence of the materials and radiation source on the degradation is also discussed with respect to the nonionizing energy loss. Those are mainly attributed to the difference of particle mass and the probability of nuclear collision for the formation of lattice defect in Si-doped AlGaAs donor layer. A comparison is also made with results obtained on irradiated InGaP/InGaAs p-HEMTs in order to investigate the effect of the constituent atom. The damage coefficient of AlGaAs HEMTs is also about one order greater than that of InGaP HEMTs for the same radiation source. The materials and radiation source dependence of performance degradation is mainly thought to be attributed to the difference of mass and the possibility of nuclear collision for the formation of lattice defects in Si-doped donor layer.

Results are presented of a study on the radiation damage and its recovery behavior resulting from thermal annealing of n-MOSFETs fabricated in a 0.8-μm single-well BiCMOS process, subjected to γ-rays, 1-MeV electrons and 1-MeV neutrons. After irradiation, the base (substrate) current and interface trap density normally increase with increasing fluence. This result points out that both ionization damage in the gate oxide and lattice defects in the p-well are induced by the irradiation. The interface trap density recovers by 85% for γ-ray irradiation with a fluence of 1×108 rad, after a 300 °C annealing.

The irradiation damage in Si-planar-doped AlGaAs pseudomorphic HEMT's integrated in 50 GHz monolithic microwave integrated circuits (MMIC's) and subjected to 20-MeV /spl alpha/ and /spl gamma/-ray irradiation is studied. Both the static and the high frequency device parameters have been analyzed. It is shown that the drain current and the effective mobility decrease after irradiation, while the threshold voltage shifts in a positive direction. The degradation of the device performance increases for higher fluence. The decrease of the mobility is thought to result from the scattering of channel electrons by the induced lattice defects and also from the decrease of the electron density in the two dimensional electron gas (2DEG) region. Moreover, the noise figure increases with increasing fluence, while the gain decreases. After 150/spl deg/C post-irradiation thermal annealing for 15 min, the noise figure and gain for 1/spl times/10/sup 12/ /spl alpha//cm/sup 2/ recovers by 67 and 19%, respectively.

The scintillation efficiency of NaI(Tl) crystals, containing Tl concentration of 0.01, 0.07 and 0.22 mole%, has been measured under electron, alpha particle and fission fragment excitations. The pu...

Results are presented of an extended study on the degradation and recovery behavior of optical and electrical performance and on induced lattice defects of 1.3 μm InGaAsP double channel planar buried heterostructure laser diodes with an In 0.76 Ga 0.24 As 0.55 P 0.45 multi-quantum well active region, subjected to a 1 MeV fast neutron and 1 MeV electron irradiation. The degradation of the device performance increases with increasing fluence. Two hole capture traps with near midgap energy level in the In 0.76 Ga 0.24 As 0.55 P 0.45 multi-quantum well active region are observed after a 1×10 16 n/cm 2 irradiation. These deep levels are thought to be associated with a Ga vacancy. The decrease of optical power is related to the induced lattice defects, leading to a reduction of the non-radiative recombination lifetime and of the carrier mobility due to scattering. The difference in radiation damage between 1 MeV fast neutrons and 1 MeV electrons is discussed taking into account the non-ionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects. The decreased optical power recovers by thermal annealing, and the recovery increases with increasing annealing temperature. The optical power recovers by 45% for 1 MeV neutron irradiation with a fluence of 1×10 15 n/cm 2 after a 300°C annealing.

We give a name “New Micro Satellite” here for highly-functional and compact satellites ranging from a few kilograms to two hundred kilograms of total mass. This new concept of satellite system is composed of one or several units on a base of “System on Panel” concept to embed various functions and hardware into a single panel structure for downsizing of the whole system, whose name is analogous to “System on Chip” in the integrated circuit designing. The drastic changes in functions and sizes of satellite system like this is supposed to be assured by the recent progress in electrical system such as personal computer and portable handy phone, and this concept is also expected to lead its way to effective realization of existing missions and creation of new missions in the future. This paper outlines “New Micro Satellite”, and several types of new mission concepts are proposed to make better use of the particular feature is proposed.

Results are presented of an extended study on the induced lattice defects and their effects on the degradation of Si1−xGe x devices, subjected to a 20 MeV alpha-ray, 1 MeV electron, 1 MeV fast neutron, and 20 and 86 MeV proton irradiations. The degradation of the electrical device performance increase with increasing fluence, while it decreases with increasing germanium content. In the Si1−xGe x epitaxial layers, electron capture levels associated with an interstitial-substitutional boron complex are induced. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.

Results are presented of a study on the degradation and recovery of the electrical performance of MOSFETs processed on SIMOX substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coefficient for alpha-ray irradiation is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the difference of incident particle mass and the possibility of nuclear collision during radiation damage.

Results are presented of an extended study on the degradation of electrical and optical performance and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to a 20 MeV alpha-ray irradiation. The difference in radiation damage with 1 MeV fast neutrons and 1 MeV electrons is discussed taking into account the energy transfer. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.

The scintillation pulse heights and decay curves from fast-neutron irradiated NaI(Tl) crystals up to the integrated fast neutron flux of 2.4×10 15 cm -2 were measured under excitation by electrons, alpha particles and fission fragments. For Tl concentrations of 0.01, 0.07 and 0.22 mole%, decreases by 20∼40% in scintillation pulse heights are observed for the irradiated crystals compared with those of non-irradiated crystals. The decreases are enhanced for electron excitation compared with those for alpha particle and fission fragment excitation. The decrease in scintillation pulse height is attributed to blocking of the energy transfer processes of V k centers and electrons by the traps and lattice disorders which were produced by fast neutrons. The effect of this blocking of the energy transfer processes is clearly observed as a difference in decay curves for the crystals before and after fast neutron irradiation; a flat top which appeared before the irradiation is not present after irradiation.

Decay curves of NaI(Tl) crystals with Tl + concentrations of 0.01, 0.07, 0.1 and 0.22 mole% have been measured under excitation by photo-electrons from a 137 Cs source, alpha particles from an 241 Am source and fission fragments from a 252 Cf source. A striking difference between the decay curve for electron excitation and those for excitation by alpha particles and fission fragments is observed. A flat top of the decay curve which is observed under electron excitation is analyzed on the bases of energy transfer processes of electrons and V k centers to Tl + ions reported by Dietrich et al. [Phys. Rev. B 8 (1973) 589]. A flat top of the decay curve from NaI(Tl) with a Tl concentration of 0.01 mole% under alpha particle excitation is also observed. Faster decay components of 34±5 ns (in addition to the main scintillation component of 150±10 ns) and 15±5 ns (in addition to the main component of 100±10 ns) are observed under alpha particle excitation and fission fragment excitation, respectively. This findin...

The impact of several factors, related to the doping density, the substrate type and the thermal pre-treatment on the proton radiation damage coefficients of Si diodes is discussed and verified experimentally. The diode parameters investigated are the leakage current density, the recombination lifetime and the low-frequency noise current spectral density. Proton irradiations have been performed in the energy range 10 MeV to 100 MeV and in the fluence range of 5·109 to 4·1011 cm−2, typical for space applications. The obtained coefficients are compared with theoretical NIEL predictions.

Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20 MeV alpha ray and 220 MeV carbon, are studied for the first time. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The degradation of device performance increases with increasing fluence. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas (2DEG) region. The influence of the radiation source on the degradation and recovery is discussed by comparison with 1 MeV electron and 1 MeV fast neutron exposures with respect to the number of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300/spl deg/C shows that the device performance degraded by the irradiation recovers completely.

Irradiation damage in In 0.53 Ga 0.47 As p-i-n photodiodes by 1 MeV fast neutrons has been studied as a function of fluence for the first time, and the results are discussed in this paper. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In 0.53 Ga 0.47 As epitaxial layers and the InP substrate are studied by Deep Level Transient Spectroscopy (DLTS) methods. In the In 0.53 Ga 0.47 As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of the type of radiation source on the device degradation is then discussed by comparison to 1 MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass between the two irradiating particles and the probability of nuclear collision for the formation of lattice defects.

The degradation and recovery behavior of strained Si1−xGex diodes and heterojunction bipolar transistors (HBTs) irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and also compared extensively with previous results obtained on electron and neutron irradiated devices. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL).

A new sampling method, capable of sampling plaque from its surface to its interior for quantitative studies, was modified to meet some of the requirements for the determination of the fluoride and mineral (Ca and P) profiles within dental plaque formed in vivo. Plaque samples were repeatedly collected from the same individual, using special devices, before a single fluoride rinse (900 parts/10(6) fluoride) and 10 min and 24 hr after rinse. The method allowed examination of fluoride, calcium and phosphorus distribution along the entire thickness of plaque. Fluoride content significantly increased throughout the sample 10 min after rinsing, indicating the fluoride had rapidly penetrated into the plaque. Although the elevated fluoride concentrations diminished almost to baseline with 24 hr, a high correlation was found between fluoride and minerals in each plaque fraction. It is concluded that this technique will be useful for evaluating the fluoride and mineral behaviour in the saliva/plaque and plaque/enamel interfaces, and the anti caries efficacy of fluoride applications.

Coronary artery aneurysms (CAA) are relatively rare diseases caused by kinds of backgrounds such as atherosclerosis and connective tissue disorders, and the surgical strategy of them is still controversial. We have performed aneurysmectomy when the diameter is more than 10mm or CABG when the stenosis exists around the CAA. In this study, we evaluated our result of the strategy. Methods

Irradiation damage in n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial diodes and heterojunction bipolar transistors (HBTs) by protons is studied as a function of germanium content, proton fluence and energy for the first time. The degradation of the electrical performance of devices increases with increasing fluence, while it decreases with increasing germanium content and energy. The induced lattice defects in the Si/sub 1-x/Ge/sub x/ epitaxial layers and the Si substrate are studied by DLTS methods. In the Si/sub 1-x/Ge/sub x/ epitaxial layers for diodes, electron capture levels associated with interstitial boron complex are induced by irradiation, while two electron capture levels corresponding to the E center and the divacancy are observed in the collector region of the HBTs. The influence of the radiation source on device degradation is then discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects. In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300/spl deg/C. Based on the recovery of electrical performance, it is pointed out that the electron capture levels induced in the Si/sub 1-x/Ge/sub x/ epitaxial layers are mainly responsible for the increase of reverse diode current.

Irradiation damage in In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes by 1-MeV fast neutrons is studied as a function of fluence for the first time. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In/sub 0.53/Ga/sub 0.47/As epitaxial layers and the InP substrate are studied by DLTS methods. In the In/sub 0.53/Ga/sub 0.47/As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of radiation source on device degradation is then discussed by comparison to 1-MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300/spl deg/C. After 300/spl deg/C thermal annealing, the light current only recovers to 20% of pre-irradiation for a fluence of 1/spl times/10/sup 13/ n/cm/sup 2/, while it recovers to 53% for a fluence of 1/spl times/10/sup 15/ e/cm/sup 2/. The different of recovery behavior is thought to be due a different type of radiation damage.

Radiation damage in n + p and p + n Si diodes by 1 MeV fast neutrons and 1 to 2 MeV electrons is investigated as a function of the type of Si substrate and radiation source. The degradation of the electrical performance by irradiation increases with increasing fluence and is much larger for CZ-Si diodes than for FZ-Si diodes. The difference of radiation damage in diodes fabricated from different Si substrates is thought to be due to the formation of lattice defects which are associated with the creation of oxygen-related complexes. The degradation of diodes irradiated by neutrons is also larger than for electron-irradiated diodes. The damage is more pronounced as the acceleration voltage increases for electron irradiation. This is attributed to the different number of knock-on Si atoms and the nonionizing energy loss during irradiation.

Irradiation damage in n + -Si/p + -Si 1-x Ge x epitaxial diodes and n + -Si/p + -Si 1 -Ge x /n-Si epitaxial heterojunction bipolar transistors (HBTs) is studied as a function of germanium content, radiation source, and fluence. The degradation of electrical performance of the devices by irradiation increases with increasing fluence, while it decreases with increasing germanium content. The induced lattice defects in the Si 1-x Ge x epitaxial layer and Si substrate are studied by DLTS methods. In the Si 1-x Ge x epitaxial layer of diodes and HBTs, an electron capture level which is associated with interstitial boron is induced by irradiation, while electron capture levels corresponding to E center and divacancy are formed in the collector region for HBTs. The impact of the radiation source on the degradation of performance is correlated with simulations of the number of knock-on atoms and the nonionizing energy loss (NIEL).

Irradiation damage in n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) by 1-MeV fast neutrons is studied as a function of fluence and germanium content for the first time. The degradation of the electrical performance of HBTs by irradiation increases with increasing fluence, while it decreases with increasing germanium content. The induced lattice defects in the base and the collector regions are studied by DLTS methods. In the base region, electron capture levels associated with interstitial boron are induced by irradiation, while two electron capture levels corresponding to the E centers and the divacancy are formed in the collector region. The degradation of device performance is then correlated with simulations of numbers of knock-on atoms. In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300/spl deg/C. Based on the recovery of electrical performance, it is pointed out that the electron capture levels induced in the base and collector regions are mainly responsible for the increase of base current and the decrease of collector current.

A study is presented of the nature and injluence on device performance of lattice defects in strained n+-Si/p+ -Si1−xGex epitaxial diodes and n +-Si/p +-Si 1−xGex/n-Si epitaxial heterojunction bipolar transistors introduced by fast neutrons and Me V energy electrons. The generation of deep levels in the strained Si1−xGex epitaxial layers and the degradation of device characteristics are also reported as afunction of fluence and germanium content. The degradation of device performance of both diodes and heterojunction bipolar transistors by irradiation increases with increasing jluence, whereas it decreases with increasing germanium content. For x = 0·12 diodes irradiated by 1 MeV electrons, hole and electron capture levels are induced in the Si1−xGex epitaxial layers, although electron capture levels only areformedfor x = 0·16 diodes. For x = 0·12 diodes irradiated by 1 MeV fast neutrons, only electron capture levels are induced. Based on the annealing behaviour of the electrical characteristics a...

The irradiation damage in n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ epitaxial diodes and n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) by fast neutrons and MeV electrons is studied as a function of fluence and germanium content for the first time. The degradation of the electrical performance of both diodes and HBTs by irradiation increases with increasing fluence, while it decreases with increasing germanium content. The damage coefficient of reverse current for x=0.12 and 0.16 diodes irradiated by neutrons is calculated to be 6.2/spl times/10/sup -21/ and 5.5/spl times/10/sup -21/ n/sup -1/ A cm/sup 2/, respectively. That of h/sub FE/ for electron-irradiated x=0.08, 0.12 and 0.16 HBTs is 7.6/spl times/10/sup -16/, 2.7/spl times/10/sup -16/ and 1.6/spl times/10/sup -16/ s/sup -1/ cm/sup 2/ respectively. >

The objective of this study is the development and evaluation of the usability of an educational programme that teaches disaster preparedness to pregnant women.This intervention study examined an intervention group that attended an educational programme and a control group that did not. The subjects were pregnant women in their second trimester. The programme was developed with prior studies and evaluated by self-administered questionnaires that asked about disaster preparedness. The questionnaire was administered twice to the participants in both groups: to the intervention group just before the childbirth class and 1 month after the class, and to the control group at the time of their maternity examination and 1 month afterwards. Two hundred twenty-six members of the intervention group and 262 members of the control group responded to both questionnaires. Of these, 99 of the intervention group and 104 of the control group were primiparous without disaster experience, and the programme was evaluated by comparing these two groups. Effects due to the disaster experience were also analysed within the intervention group.Among primiparous without disaster experience, an intervention effect was found in items concerning awareness modification (five of six items) and behaviour modification (three of seven items). The intervention effect was particularly pronounced in a comparison of primiparous without disaster experience.An intervention effect was found among the pregnant women who took the programme. In particular, it was statistically significant among primiparous without disaster experience, which suggests that the programme should be shaped to reflect this subject demographic.

A 3 MW-class high-precision IGBT chopper type power supply was developed for the bending electromagnets of the Heavy-Ion Facility at Gunma University. The current ripple was smaller than ±1×10−5, and the current tracking error was smaller than ±1×10−4. Heavy ion beams were successfully accelerated with this power supply, and medical treatment commenced on 16th March 2010.

Twelve microsatellite DNA loci were newly isolated from the ground beetle Carabus insulicola, endemic to Japan, for studying mating systems. Phage vector was used for establishing genomic DNA library, and positive clones were screened with 32P-labelled probes. Primer sequences and annealing temperature for PCR amplification were determined for each locus. Allelic polymorphism of each locus, number of alleles and observed and expected heterozygosities, were investigated based on 24 individuals. Similarity between observed and expected heterozygosities suggests random mating, and relatively low observed heterozygosity found in two loci may be due to the presence of null alleles.