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Ultrafast dynamics of spin relaxation in monolayer WSe2 and the WSe2/graphene heterojunction investigated using a circularly polarized femtosecond pump–probe system.

Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control as compared with electronic devices. Here, we review and discuss the principles of orbital-selective electronic excitation and its roles in phase/structural transitions of phase-change memory (PCM) materials, including Sc0.2Sb1.8Te3 and GeTe phases. It is demonstrated, that the mechanism can influence the dynamics or results of structural transitions, such as an ultrafast amorphization of Sc0.2Sb1.8Te3 and a non-volatile order-to-order structural transition of GeTe. Without thermal melting, these structural transitions have the advantages of ultrafast speed and low power consumption. It suggests that the orbital-selective electronic excitation can play a significant role in discovering new physics of phase change and shows a potential for new applications.

The urgent demand to replace the rapidly declining conventional reserves is driving China's operators to accelerate the development of deepwater reservoirs. SHENHAI Project is the first deepwater project operated by CNOOC China Ltd., locates in water of 1220m to 1546m in South China Sea. Deepwater completions differentiate themselves not only by unique technical challenges, but also by their high cost, risk, and long project cycles. A sound project management process is essential to ensure flawless execution. By reviewing the key steps of the SHENHAI deepwater completion campaign, such as upper completion design, critical equipment selection, interface management, workshop preparation, and final project execution, lessons learnt, etc., this paper provides both a job cycle of completion design-to-execution and a methodology to manage a complex project by addressing the challenges inherent in the deepwater completion process. As a result, the well completion campaign was completed ahead of schedule. A total of 11 deepwater wet-tree wells were successfully delivered as designed including two dual-zone hydraulic controlled intelligent wells. The upper completion design has been proven to be safe and reliable with first applications of several critical upper completion tools in the region, such as Nitrogen-Charged Surface Controlled Sub-surface Safety valve (SCSSV), Hydrostatic-Setting production packer and quartz-based permanent downhole pressure gauge. This success demonstrates the completion design and practices are applicable for this deepwater project and can be extended to further offset deepwater projects in this area. This paper describes case details of successful upper completions of SHENHAI project aiming to provide information and experiences for engineers who may face the similar challenges.

Sm extraction from a LiCl-KCl melt was carried out by forming alloys on various electrodes, including Al, Ni, Cu, and liquid Zn, and the electrochemical behaviors of the resultant metal products were investigated using different electrochemical techniques. While Sm metal deposition via the conventional two-step reaction process was not noted on the inert electrode, underpotential deposition was observed on the reactive electrodes because of the latter’s depolarization effect. The depolarization effects of the reactive electrodes on Sm showed the order Zn > Al > Ni > Cu. Sm-M (M = Al, Ni, Cu, Zn) alloys were deposited by galvanostatic and potentiostatic electrolysis. The products were fully characterized by X-ray diffractometry (XRD) and scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS), and the stability of the obtained M-rich compounds was determined. Finally, the relationship between the electrode potential and type of Sm-M intermetallic compounds formed was assessed on the basis of the observed electrochemical properties and electrodeposits.

Black silicon fabricated by ultrafast laser is a promising material for infrared detection. However, the structure–property relationship in laser-fabricated amorphous Si is still unclear. By first-principles calculations, different distorted local structures are revealed depending on cooling rate. By comparing the evolutions of structure and property, the bond angle distribution is identified as a good structural descriptor for sub-band absorptions. Glass formation is not simply a freezing of liquid but involves certain structural transitions that happened between 1350 and 850 K. A glass-forming temperature of 1100 K is further revealed which agrees with experiments. The main thermal-management effect is the duration time of glass-forming process. A shorter-pulse laser leads to more distorted structures and thus more defect states and infrared absorptions.

We fabricated the amorphous GeTe/cubic Sb2Te3 supperlattice-like structure films by the radio frequency sputtering, and demonstrated the stability of cubic Sb2Te3 could be strengthened. The competition between interface energy and phase transformation energy resulted in the thermodynamical stability at the nanoscale. The presented design approach opens the doors for the stabilization of metastable phase, and sheds new insights into the role of interfaces in materials synthesis.

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage., By first‐principles molecular dynamics, this work proposes a phase change memory (PCM) process at the 2D limit that is achieved in a monolayer Sb2Te3 for the first time. This will be a potential strategy for improving the performance of PCM technology to realize high integrated density, fast speed, low power consumption, or even artificial intelligence applications.

Direct optical ferroelectric switching (FE switch) has the advantage of being ultrafast over the traditional FE switch, which relies on domain nucleation and growth. However, how to realize nonvolatility in such an optical FE switch poses a serious challenge. Time-dependent density-functional theory molecular dynamics study reveals that subpicosecond nonvolatile FE switches can be realized in GeTe and ${\mathrm{PbTiO}}_{3}$. While optical tuning of the transition barrier and initiation of a directional atomic motion are crucial, the dephasing of the excited state holds the key for the realization of nonvolatility.

Pioglitazone (PIO) attenuates cisplatin nephrotoxicity whereas the underlying mechanism remains unknown. Apoptosis is associated with mitochondrial dysfunction and SIRT1 activation can decrease cell apoptosis in cisplatin nephrotoxicity. Therefore, we explored whether the protective effect of PIO in cisplatin nephrotoxicity is achieved by suppressing mitochondria‐mediated apoptosis through SIRT1/p53 signalling regulation. Cell viability, apoptosis, survival rate, renal pathology and function were examined. Moreover, we also analysed the expression of SIRT1, Acetyl‐p53, mitochondrial membrane potential (MMP), reactive oxygen species (ROS), mitochondrial permeability transition pore (mPTP) opening, adenosine triphosphate (ATP) and apoptosis‐related protein in vivo and in vitro. Pioglitazone treatment significantly increased cell viability, promoted SIRT1‐p53 interaction, upregulated Bcl‐2 expression, activated SIRT1 and elevated mitochondrial ATP synthesis after cisplatin treatment. However, PIO decreased the generation of ROS, opening of mPTP, dissipation of MMP and translocation of cytochrome c after cisplatin treatment. Pioglitazone also reduced the activation of caspase‐3 and caspase‐9, lowered the ratio of Bax/Bcl‐2, attenuated kidney pathological damage and dysfunction, down‐regulated the expression of Acetyl‐p53, PUMA‐α and Bax and abated cell apoptosis after cisplatin treatment. The SIRT1 inhibitor, EX527, clearly reversed the protective effects of PIO. These results implied PIO attenuated cisplatin nephrotoxicity by suppressing mitochondria‐mediated apoptosis through regulating SIRT1/p53 signalling.

npj computational materials 6(1), 31 (2020). doi:10.1038/s41524-020-0303-z, Published by Nature Publ. Group, London

Micro-ripple and micro-bead structures are formed on a silicon (Si) surface after irradiation with femtosecond laser pulses in nitrogen (N2) atmosphere. Simultaneously, supersaturated nitrogen (N) atoms, with a concentration above 1020 cm−3, are doped into the textured black Si layer via laser ablation. The N-doped Si exhibits strong below-bandgap infrared absorption from 1.1 to $2.5~\mu \text{m}$ , which remains nearly unchanged after annealing for 30 min at 873 K. The mechanism of this thermally stable infrared absorption is analyzed by first-principles calculations. According to the transmission electron microscopy results, multiple phases (including single crystalline, nanocrystalline, and amorphous phases) are observed in the laser-irradiated layer. Hall Effect measurements prove that N-dopants induce a low background free-carrier concentration ( $\sim 1.67\times 10^{16}\,\,\text {cm}^{-3}$ ). Finally, a Schottky-based bulk structure photodiode is made. This broadband photodiode exhibits good thermal stability and a photo-responsivity of 5.3 mA/W for $1.31~\mu \text{m}$ at a reverse bias of 10 V.

Phase-change memory (PCM) material is the promising material system for nonvolatile-memory technology. Performance optimization of PCM device urgently requires the deeper clarification of its material “Gene”. In this study, through first-principles calculations, p-orbital-aligned atom chains are identified to play important roles in governing optoelectronic reflectivity in amorphous Ge2Sb2Te5. These atom chains make the electronic state of the amorphous Ge2Sb2Te5 hold strong electron-polarized components, thereby governing the optical property. The present study offers a new understanding of “Gene” for PCM materials which benefit the material design and the performance improvement of PCM devices.

Ge–Sb–Te superlattice (GST-SL) is a newly emerging electronic material for nonvolatile phase-change memory with ultralow energy cost. However, its switching mechanism is still unclear with intensive debates. In this work, by first-principles calculations and an electron counting model study, we study the possible mechanism of phase change and the accompanying property transition of GST-SL. GST-SL are separated into individual layers by van der Waals gaps. We demonstrate that both the global chemical stoichiometry of the material and the local chemical stoichiometry of individual layer block are required to have an insulating band gap according to an electron counting model analysis. The electrical property can be adjusted by changing the local stoichiometry, such as producing defects around van der Waals gaps. Inspired by a previous experiment, we propose that a stacking-fault motion can spontaneously alter the band gap and results in a metal–insulator transition. This transition may provide a significant change of carrier concentration and indicate an ultralow energy-consumption process with a low energy barrier. The present investigations reveal a picture of electrical transition in GST-SL and may guide us to improve its device performances.

External electric fields can be used to manipulate the electronic properties of two-dimensional (2D) materials. 2D InSe semiconductors possess high electron mobility and wide band gap tunability. Therefore, they have been proposed for use in ultrathin electronic devices. Here, using first-principles calculations, we study the charge polarization, structure, electronic structure, and gas adsorption of an InSe monolayer under vertical electric fields. We find that both the structural evolution and charge polarization rely on the directions of the electric fields. The hole effective mass at the valance band maximum can be decreased by fields that offer a possible route to increase mobility. In contrast, the fields have little impact on the effective mass of electrons at the conduction band minimum. Therefore, high electron mobility in InSe is retained under the fields. Besides, electric fields could alter the absorption intensity for gas molecules. Therefore, gas sensors could be an expected application. More importantly, this work systematically points out some key steps for setting up electric-field calculations in the popular VASP code, such as the cancellation of the symmetrisation of the charge density, avoiding electrons spilling out into the vacuum under high fields.

First-principles calculations reveal a Mexican-hat potential energy surface (PES) for two-dimensional (2D) In2Se3. This unique PES leads to a pseudo-centrosymmetric paraelectric β phase that resolves the current controversy between theory and experiment. We further show that while the α-to-β (ferroelectric-to-paraelectric) phase transition is fast and coherent, assisted by an in-plane shear phonon mode, a random distribution of the atoms in the trough of the PES acts as an entropy barrier against the reverse β-to-α transition. This will be the origin of the speed limitation of current In2Se3 ferroelectric devices. However, if one orders the β phase (due to the formation of in-plane ferroelectric domains), the reverse transition can take place within tens of picoseconds in the presence of a perpendicular electric field. Finally, the Mexican-hat PES is a general feature for the entire family of 2D III2-VI3 materials. Our finding offers a critical physical picture in controlling the ultrafast reversible phase transition in 2D In2Se3 and other III2-VI3 materials, which will benefit their practical industrial development for advanced ferroelectric devices.

GeSbTe alloys have the ability of rapidly transforming between amorphous and crystalline phases. Therefore, they can be used in the non-volatile phase change memory. Recently, a vacancy-ordered cubic Ge 2 Sb 2 Te 5 ( VOC GST) phase change material where the vacancies are highly ordered in the (111) plane, has been experimentally demonstrated by STEM. However, studies are mainly on the structural characterization, rather than on the phase change behavior and possible applications of the VOC GST. Here, using first-principles molecular dynamic simulations, we study the melt-quenched amorphization process and its possible applications. We find that the VOC GST exhibits a quasi-two-dimensional amorphization process that is triggered by the diffusion of Ge atoms but not others. A partial amorphous ( P-amor ) phase is obtained, which can act as an intermediate state between the pure amorphous and pure crystalline phases for possible ternary-state data storage.

Integrated with orthogonal design method and numerical simulation, injection molding process of the Y-type electrical connectors was conducted to study the influence of process parameters on volume shrinkage rate and maximum warpage, which are regarded as product quality indices. The multi-indices valuation model for the main influencing factors of the process is developed. The influencing sensitivity to the multi-objective of the processing parameters, such as melt temperature, mold temperature, injection time and holding pressure, is determined by range analysis. Through analyzing the diagrams of influential factors, the optimized process parameter diagram is obtained and verified by simulation. The optimum parameters minimizing the warpage defect and shrinkage are: melt temperature (528K), mold temperature (338K), filling time (0.6s), holding pressure (100%) and holding time (10s). The results show that it is effective to balance the impact of process parameters on the shrinkage and warpage. The work can provide optimal design and process reference for the quality control and assembly precision.

Electric double layer (EDL) represents one of the most basic concepts in electrochemistry and is pertinent to diverse engineering applications ranging from electrocatalysis to energy storage. Whereas phenomenological and coarse-grained models have been long established to describe ionic distributions in the diffuse layer, a faithful prediction of the physicochemical properties of the electrode–electrolyte interface from a molecular perspective remains a daunting challenge. In this work, we investigate the charging behavior of an Ag (111) electrode in NaF aqueous solutions leveraging experimental results and theoretical calculations based on the classical density functional theory for ion distributions in the diffuse layer and on the joint density functional theory (JDFT) for the electronic structure. When the Ag electrode is applied with a negative voltage, the surface charge density can be reasonably described by assuming a neutral Stern layer with the dielectric constant dependent on the local electric field as predicted by the Kirkwood equation. However, the specific adsorption of F− ions must be considered when the electrode is positively charged and the fluoride adsorption can be attributed to both physical and chemical interactions. Qualitatively, F− binding and partial charge transfer are supported by JDFT calculations, which predict an increased binding energy as the voltage increases. Our findings shed insight on the molecular characteristics of the Stern layer and the charge behavior of adsorbed species not specified by conventional EDL models.

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices., Epitaxy of single‐crystalline GaN films is performed on hexagonal BN (h‐BN)/sapphire substrates. This success is achieved through chemical activation on h‐BN, which generates N—O bonds, and thus provides nucleation sites for Ga‐polar GaN. Subsequently, pure green InGaN‐based light‐emitting diodes are fabricated with a considerable increase of indium incorporation, manifesting a great potential in long wavelength light‐emitting diodes.

Two-dimensional (2D) B–C–N alloys have recently attracted much attention but unfortunately, Chemical Vapor Deposition (CVD) B–C–N alloys typically phase separate. In spite of that, our analysis of the B–C–N alloy fabricated by electron-beam irradiation suggests that non-phase-separated B–C–N may in fact exist with a carbon concentration up to 14 at%. While this analysis points to a new way to overcome the phase-separation in 2D B–C–N, by first-principles calculations, we show that these B–C–N alloys are made of motifs with even numbers of carbon atoms, in particular, dimers or six-fold rings (in a molecule-like form), embedded in a 2D BN network. Moreover, by tuning the carbon concentration, the band gap of the B–C–N alloys can be reduced by 35% from that of BN. Due to a strong overlap of the wavefunctions at the conduction band and valance band edges, the non-phase-separated B–C–N alloys maintain the strong optical absorption of BN.

Due to the large photoluminescence quantum yield, high mobility and good stability, organic super acid treated two-dimensional WSe2 has drawn much attention. However, reports about the influence of organic super acid treatment on the dynamic processes of excitons of monolayer WSe2 are still rare. In this work, through the broadband transient absorption spectra obtained using a femtosecond pump-probe system, we determine the dynamics of A' and C excitons in monolayer and bulk WSe2 at room temperature. Besides this, we also observe the relaxation process of the holes between the two spin split states in the valence band maximum in organic super acid treated monolayer WSe2. We find that the organic super acid treatment on monolayer WSe2 does not change the peak positions of the exciton states, while those bleaching peaks' intensities increase significantly due to the enhancement of oscillator strength for exciton states, corresponding to stronger steady-state photoluminescence. This could be attributed to the strain release induced by the defect repairing effect during the organic super acid treatment process.

Time-dependent density-functional theory molecular dynamics reveals an unexpected effect of optical excitation in the experimentally observed rhombohedral-to-cubic transition of GeTe. The excitation induces coherent forces along [001], which may be attributed to the unique energy landscape of Peierls-distorted solids. The forces drive the A_{1g} optical phonon mode in which Ge and Te move out of phase. Upon damping of the A_{1g} mode, phase transition takes place, which involves no atomic diffusion, defect formation, or the nucleation and growth of the cubic phase.

Organic single-crystalline semiconductors with long-range periodic order have attracted much attention for potential applications in electronic and optoelectronic devices due to their high carrier mobility, highly thermal stability, and low impurity content. Molecular doping has been proposed as a valuable strategy for improving the performance of organic semiconductors and semiconductor-based devices. However, a fundamental understanding of the inherent doping mechanism is still a key challenge impeding its practical application. In this study, solid evidence for the "perfect" substitutional doping mechanism of the stacking mode between the guest and host molecules in organic single-crystalline semiconductors using polarized photoluminescence spectrum measurements and first-principles calculations is provided. The molecular host-guest doping is further exploited for efficient color-tunable and even white organic single-crystal-based light-emitting devices by controlling the doping concentration. The clarification of the molecular doping mechanism in organic single-crystalline semiconductor host-guest system paves the way for their practical application in high-performance electronic and optoelectronic devices.

Ge 1 Cu 2 Te 3 is an important candidate for high-temperature phase change memory due to the fine amorphous stability. Yet, the basic bonding chemistry for its high-temperature application is still not completely clear. In this work, a new bonding mechanism for its amorphous and crystalline phases is proposed and demonstrated by first-principles calculations. Compared to the tetrahedral environment distributed evenly in crystalline form, Cu atoms in the amorphous state tend to be accumulated as trigonal clusters. For the crystalline phase, a bonding configuration of nonequivalent sp 3 hybridization with Te lone-pair electrons is proposed without Cu d electron participation. In the amorphous phase, however, a significant bonding reconfiguration of Cu d electrons occurs due to the isolation of the Te lone-pair electrons. Therefore, the notable contrast in the Cu atomic and electronic structures between the crystalline and amorphous phases results in an obvious phase transition barrier for high-temperature storage. The mechanism presented in this study serves as a reference for other transition-metal alloyed phase-change materials.

Femtosecond lasers (fs) can cause a disparity between electronic and lattice temperatures in the very short period after irradiation. In this relatively cool lattice regime, the material properties can differ drastically from those under thermal equilibrium. In particular, first-principles calculations reveal two general mechanical effects on semiconductors. Firstly, the excitation can induce a negative pressure on the lattice, causing a >10% expansion, even for superhard diamond. Secondly, it induces inhomogeneous local forces on the atoms, for both perfect and distorted lattices. In the case of phase-change-memory for Ge2Sb2Te5 and GeTe alloys, such random forces cause a simultaneous phase transition from crystalline to amorphous, which enables faster data writing. These excitation effects are further supported by the time-dependent density functional theory. This work could be an important step in advancing fs laser techniques for the atomic-level control of structures, rather than relying on traditional melting or ablation approaches which often apply to much larger and non-atomic scales.

Orthogonal experiments at concrete materials proved: notable errors will occur when using chemical catalyzing to predict the concrete strength. Errors are unavoidable since such methods have neglected much factors. Ground on test data, effects on concrete intensity were analyzed with changes of sand ratio, bigger aggregate, and environment humidity, cement components. Error origins of concrete intensity were found, and the fact of avoidless errors from chemical catalyzing was notarized. Materials testing combining with fieldwork, new technique was proposed for monitoring quality of fresh concrete in building site. So hidden trouble would be known betimes before elementary solidification in concrete. Practices indicated that this technique is simple and speedy, it can avoid the loss of doing over again in concrete structures and can effectively improve quality of concrete engineering.

Found on data of accelerated life test, the relationship between outward disease of structural concrete and holistic deterioration of building was analysed. The results indicated that: outward diseases of structural concrete, such as abrasion, scour erosion, and peeling, carbonization etc, are not hypostatic breakage for holistic building, so could not be regarded as the key points of deterioration identification at building. Deterioration appraisement should be focused on detections of engineering indices relating to structural inbeing quality and analyses of multifarious remainder relating to bearing capacity. Only in this way, deterioration degree of structural concrete and efficacious repair indices could be factually incarnated. Ground on testing multifarious bearing capacities, deterioration identification of concrete buildings was founded, and remedy principles corresponding to inbeing deterioration indices were put forward.

Effective unit weight, inner friction angle and cohesion are the main engineering indices of rock-soil mass anti-slide. Deviant leakage brings about obvious decrease of effective unit weight, inner friction angle and cohesion under combined action of thrust, buoyancy, and lubrication. So as to slip in unstable rock-soil mass. Deviant leakage schleps out weensy particles, induces seepage failure, so geotechnical engineering would collapse. Therefore the reasonable anti-leakage in unstable mountain is one of the key technologies that urgently to be solved in geotechnical engineering. Combined with the typical landslide geology, several groundwork anti-leakage were studied for earth-rock dam, correlative processes and technologies were discussed, and construction parameters were designed. The abnormal situations that may occur in construction were analysed, and preparative schemes were put forward. The results had been validated in practical engineering.

Resources of memory are frequently used times without number for reducing cost of control system. Rewriting in memory would cause occasional hardware conflict when especial data are inputted or are calculated, thereby system faults even accidents are elicited. Origin of occasional malfunction was analysed in automatic control system, necessity of program storage separate from data storage was discussed, and the notion was put forward that resource allocation of memory should be compatible with the system function. So dead halt owing to codes cover each other could be avoided, and reliability of measurement or control system could be effectively improved.

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) at an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Moreover, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.

The repairing of incomplete measured data caused by the inaccessibility or invisibility of some portions of the product surface for measure tools plays an important role in Reverse Engineering. The fundamental principles of Reverse Engineering and Anatomical CAD are introduced. The main functional advantages of 3-matic package integrated with Anatomical CAD are presented. There is a big difference in the working flows between Anatomical CAD and traditional CAD packages in the process of RE data repairing. In this paper, we propose a new method of data repairing based on Anatomical CAD. The point cloud of the stamping part obtained by a Potable CMM is repaired successfully by 3-matic, which reduces preparation times by working with a triangular mesh directly, and saves the turn-around time and works more effectively.

Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018.

A finite element model is developed to simulate three-way coupling of thermal, electrical and mechanical behavior of electric current-activated sintering. In addition to the direct simulation of the evolution of electrical potential and temperature in the system, the model is capable of simultaneously calculating the displacement fields and the stress distributions. Experimentally measured temperatures are found to be in excellent agreement with simulations. The displacement and stress distributions were found to depend on the material properties. In the copper system, owing to its large thermal expansion, the steady-state vertical stress has a gradient of 33% across the sample at a 1000 A current input (∼700 °C); the radial and angular stresses are significant and have larger gradients. The maximum shear stress analysis indicates high stress concentrations at the surfaces at the ends of plungers that are in contact with the spacers.

To meet the high-temperature applications of the phase change memory, Ge1Cu2Te3 (GCT) has been proposed to be a suitable candidate due to its good amorphous stability. Here, we investigate the basic atomic bonding mechanism by first-principles calculations to understand this. The amorphous GCT has significant chemical disorder with large amounts of homopolar bonds. Cage-like clusters (composed of 3-fold rings) are mainly related to Cu atoms. The bonding mechanism in crystalline GCT is proposed and demonstrated by the nonequivalent sp3 hybridization with Te lone-pair electrons. In contrast, amorphous GCT requires Cu d electrons to participate in bonding due to the isolation of Te lone-pair electrons. Thus, the vast difference in atomic and electronic structures between the amorphous and crystalline phase makes the good amorphous stability for high data retention.